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A method of controllable preparation of tin dioxide nanowires

A tin dioxide and nanowire technology, applied in tin oxide and other directions, can solve the problems of excessive nanowire diameter, large nanowire size, and difficulty in regulating the growth of nanowire size.

Active Publication Date: 2022-03-01
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this method can control the diameter of the nanowire within a certain range, the diameter of the grown nanowire is still too large, and the thickness of the gold film has reached the limit, and it is impossible to continue to reduce the diameter of the tin dioxide nanowire
[0003] Due to the traditional method of plating gold film on the reaction substrate, the gold film will converge into gold particles with uncontrollable size and non-uniform size during the high-temperature heating process, so the nanowires grown by the traditional method are too large and non-uniform, and it is difficult to achieve regulation. Dimensions of growing nanowires

Method used

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  • A method of controllable preparation of tin dioxide nanowires
  • A method of controllable preparation of tin dioxide nanowires
  • A method of controllable preparation of tin dioxide nanowires

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Sonicate the reaction base silicon wafer in acetone, alcohol, and deionized water for 20 minutes respectively, and dry it with high-purity nitrogen to obtain a pure silicon wafer. The micellar gold nanoparticles with uniform size of 1nm, 3nm, 6nm and 9nm were dipped into the reaction substrate as catalysts. The quartz boat containing 1.2g of tin powder was placed in the central heating zone of the tube furnace, and the reaction substrate was placed above the quartz boat. Use a vacuum pump to evacuate the inside of the tube furnace to vacuum, feed nitrogen into the reaction device until the pressure in the furnace reaches the indoor atmospheric pressure, repeat the gas washing twice, and then open the gas outlet. Raise the temperature in the furnace at 7°C per minute to 700°C, feed 70 sccm of oxygen and turn off the nitrogen to react for 2 hours, after the reaction is completed, turn off the oxygen and let the nitrogen flow until room temperature to take out the sample. ...

Embodiment 2

[0023] Sonicate the reaction substrate silicon wafer in acetone, alcohol, and deionized water for 20 minutes in sequence, and dry it with high-purity nitrogen to obtain a pure silicon wafer. The micellar gold nanoparticles with a uniform size of 1 nm were dipped into the reaction substrate as catalysts. The placement between the reaction source and the substrate is as in Example 1. The temperature in the furnace is raised at 7°C per minute to 800°C, and 70 sccm of oxygen is introduced to react with nitrogen for 2 hours. After the reaction is completed, the oxygen is turned off and nitrogen is introduced. Pure tin dioxide nanowires with a diameter of about 15nm-20nm were obtained. We performed X-ray diffraction tests on the tin dioxide nanowires produced by the reaction. Figure 4 , all the diffraction peak positions are completely consistent with the peak positions of the JCPDS no.77-448 standard spectrum. From the three main diffraction peaks (110), (101) and (211) of the sa...

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Abstract

The invention discloses a controllable method for preparing tin dioxide nanowires by using a chemical vapor deposition method, and relates to the field of nanomaterial preparation. The specific steps of this experiment using the chemical vapor deposition method are as follows: use a clean silicon wafer to pick up gold nano-dots with uniform arrangement and uniform size. Take an appropriate amount of tin powder and place it evenly in the quartz boat, and place the silicon chip with gold dots on top of the tin powder in the quartz boat. Place the quartz boat in the central heating area of ​​the tube furnace. At the beginning of the experiment, the inside of the tube furnace is evacuated, and nitrogen is introduced until the reaction temperature is changed to oxygen. After the experiment, the oxygen is turned off and nitrogen is introduced. After cooling to room temperature, the nitrogen is turned off. Take out the sample. The invention has the advantages of simple operation, low cost, good sample crystallinity, uniform appearance and the diameter of the nano wire can be regulated by changing the size of the nano gold point. The tin dioxide nanowires prepared by the method have an average diameter of 10-35nm, a length of 5-10μm, an aspect ratio of 50-1000 and a relatively high specific surface area.

Description

technical field [0001] The invention relates to the technical field of preparation of nanometer materials, in particular to the preparation of tin dioxide nanowires by chemical vapor deposition. Background technique [0002] As an n-type oxide semiconductor, tin dioxide has a band gap of 3.6eV. One-dimensional or quasi-two-dimensional nanostructures such as tin dioxide nanowires and nanobelts have a higher specific surface area, and their chemical adsorption and catalytic capabilities are significantly improved. At the same time, due to the quantum size effect of nanomaterials compared with bulk materials Its energy band structure has more novel characteristics and has better performance than its bulk materials and thin film materials. It is widely used in transparent electrodes, solar cells, thin film resistors, and especially gas sensors. At present, there are many methods for synthesizing tin dioxide with nanowire structure, including molten salt method, hydrothermal met...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G19/02
CPCC01G19/02C01P2004/16C01P2004/03C01P2002/72C01P2004/04
Inventor 高伟彭钰佳孙多殷红
Owner JILIN UNIV