Silicon carbide MOSFET device with T-type masking layer structure

Abstract

The invention relates to a silicon carbide MOSFET device with a T-type masking layer structure. The silicon carbide MOSFET device comprises a drain electrode, an N-type doped substrate layer, an N-type drift region and a P-type base region which are sequentially arranged from bottom to top; P-type source regions and N-type source regions are arranged on the P-type base region; a groove gate structure is arranged in the P-type base region; the bottom of the groove gate structure extends into the interior of the N-type drift region, and the top of the groove gate structure extends out of the upper surface of the P-type base region; the T-shaped masking layer structure is arranged below the groove gate structure, and the upper surface of the T-shaped masking layer structure is in contact withthe lower surface of the groove gate structure; source electrodes are arranged on the P-type source regions and the N-type source regions; and a gate electrode is arranged on the groove gate structure. According to the silicon carbide MOSFET device, the T-shaped masking layer structure is added at the bottom of the groove gate structure, so that the breakdown voltage of the device is improved, the switching speed of the device is increased, and meanwhile, the switching power consumption of the device is reduced.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a silicon carbide MOSFET device with a T-shaped masking layer structure. Background technique [0002] Silicon carbide, a wide bandgap semiconductor material, has excellent physical and chemical properties such as large bandgap width, high critical breakdown electric field, high thermal conductivity and high electron saturation drift velocity, and is suitable for high temperature, high pressure, high power and radiation resistance semiconductor devices. In the field of power electronics, power Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET, Metal-Oxide-Semiconductor-Field-Effect-Transistor) has been widely introduced, and it has the characteristics of simple gate drive and short switching time. [0003] Trench gate structure MOSFET is a new high-efficiency power switching device developed after MOSFET. It adopts trench gate structure field effect ...

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Problems solved by technology

[0004] At present, in the traditional groove gate structure MOSFET device, it has been able to achieve a higher withstand voltage level by design, but in practical applications, the electric field concentration at the corner of the gate oxide layer in the groove gate structure MOSFET device leads to the shock of the gate dielectric layer. breakdown, causing the device to break down below the rated breakdown voltage, seriously affecting the forward blocking characteristics of the device

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