Oxide semiconductor film, thin film transistor, oxide sintered body, and sputtering target
A technology of oxide semiconductors and thin film transistors, applied in the field of sputtering targets, can solve the problems of reduced carrier control and difficult carrier concentration, and achieve excellent TFT performance
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Embodiment 1
[0304] The gallium oxide powder, aluminum oxide powder, tin oxide powder, and indium oxide powder were weighed so as to have the ratio (atomic ratio) shown in Table 1, put into a polyethylene tank, and perform 72 hours of mixing and pulverization to produce a mixed powder.
[0305] This mixed powder is added in the mould, at 49MPa (conversion is SI unit 500kg / cm 2 ) into a stamped form under pressure. The molded body is at 196MPa (converted to SI unit 2000kg / cm 2 ) were densified by CIP under pressure. Next, put the molded body into a normal-pressure firing furnace, keep it at 350°C for 3 hours in the atmosphere, then raise the temperature at a rate of 100°C / hour, keep it at 1480°C for 32 hours, and then leave it to cool. Thus, an oxide sintered body was obtained.
[0306]
[0307] The following physical properties of the obtained oxide sintered body were evaluated. The results are shown in Table 1.
[0308] (1) Crystal phase in XRD measurement
[0309] The X-ray diff...
Embodiment 2、3 and comparative example 1、2、3
[0327] An oxide sintered body was obtained in the same manner as in Example 1 using the raw material oxide in the composition shown in Table 1. The obtained oxide sintered body was evaluated in the same manner as in Example 1. The results are shown in Table 1. In addition, the obtained XRD patterns are shown in Figure 11 to Figure 15 .
[0328] 【Table 1】
[0329]
[0330] As shown in Table 1, the composition ranges of Examples 1 to 3 satisfy the formulas (5) to (8), and even after 5 hours of film formation with a DC power of 400W, there is no major change except for the formation of erosion .
[0331] Comparative Examples 1 and 2 did not contain Al, and the Al content of Comparative Example 3 exceeded the lower limit of formula (8). After film formation with 400W DC power for 5 hours, black foreign matter and hairline cracks occurred in the etched part. In addition, in Comparative Examples 1 to 3, Ga 2 In 6 sn 2 o 16 The content of the compound became the main com...
Embodiment A
[0335]
[0336] First, if Figure 16A As shown, a sample in which only an oxide thin film was mounted on a glass substrate was produced, and its characteristics were measured and evaluated. The specific steps are as follows.
[0337] First, sputtering was performed under the conditions shown in "Manufacturing Conditions" in Table 2 using the sputtering targets produced from the oxide sintered bodies produced in Examples 1 to 4, Comparative Example 1, and Comparative Example 2, Thus, a 50 nm thin film (oxide semiconductor layer) was formed on the glass substrate. Sputtering was performed using a mixed gas obtained by mixing high-purity argon with 1% by volume of high-purity oxygen as a sputtering gas.
[0338] Next, the obtained samples were heat-treated at 350° C. for 30 minutes in the air, and the properties of the processed thin films were evaluated. The specific evaluation items and evaluation methods are as follows.
[0339] ·Hall effect measurement
[0340] The sam...
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