Lateral transistor with Schottky barrier AlGaN/GaN heterojunctions and manufacturing method thereof

Abstract

The invention provides a lateral transistor with Schottky barrier AlGaN / GaN heterojunctions and a manufacturing method thereof. A grid electrode of the structure adopts metal-conductor rectifying contact, the surface of an epitaxial layer on the side close to a drain electrode is further connected with the drain electrode through a heteroepitaxy formed AlGaN layer, and the AlGaN / GaN heterojunctions are formed; the grid electrode is in Schottky contact, and a source electrode and the drain electrode are in ohmic contact. High-density two-dimensional electron gas is formed by the AlGaN / GaN heterojunctions at the interfaces of the heterojunctions through spontaneous polarization and piezoelectric polarization effects, and the two-dimensional electron gas has extremely high migration rate, so that lateral transistor with AlGaN / GaN heterojunctions are extremely low in on resistance. The structure has higher voltage resistance and large current density, current collapse in conventional AlGaN / GaN can be reduced, and the performance of the device can be greatly improved.

Description

technical field [0001] The invention relates to the field of power semiconductor devices, in particular to a lateral transistor. Background technique [0002] Transverse field effect transistors have the advantages of easy integration, good thermal stability, good frequency stability, low power consumption, multi-subconduction, small power drive, and high switching speed. They are the core of intelligent power circuits and high-voltage devices. Due to the growing market demand for portable power management and automotive electronics, it is receiving increasing attention across the globe. [0003] Wide bandgap semiconductor materials have the characteristics of large bandgap width, high electron drift saturation velocity, small dielectric constant, and good electrical conductivity. GaN materials have excellent properties and potential applications in the field of power devices. One of the cores of the third-generation semiconductor materials, compared with silicon carbide (S...

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Problems solved by technology

However, since the nitride material has no natural substrate, it needs to rely on the material growth method to realize the single crystal material. In the case of no artificial doping, the grown nitride epitaxial film usually contains a variety of residual impurities, which strongly affect The background carrier concentration of the material is difficult to obtain high-quality epitaxial layers

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