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Method for decomposing ternary alloys to prepare silicon or germanium nanometer materials

A ternary alloy, nanomaterial technology, applied in nanotechnology, chemical instruments and methods, silicon compounds, etc., can solve problems such as limiting the practical application ability of products, difficult to remove, etc., to avoid particle inhomogeneity, low cost, and production. high rate effect

Active Publication Date: 2019-09-27
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The obtained germanium nanoparticles have good dispersion and small particle size, but natural biomacromolecules are used as stabilizers, which are not easy to remove from the product, which will also greatly limit the actual application ability of the product

Method used

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  • Method for decomposing ternary alloys to prepare silicon or germanium nanometer materials
  • Method for decomposing ternary alloys to prepare silicon or germanium nanometer materials
  • Method for decomposing ternary alloys to prepare silicon or germanium nanometer materials

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] Mechanical ball milling to decompose Li 2 ZnSi ternary alloy compound prepares the method for nano-silicon material, comprises steps:

[0056] (1) In an argon atmosphere glove box, the elemental Li, Zn, and Si were mixed and sealed in a metal tantalum container at a molar ratio of 2:1:1, and the metal tantalum container was placed in a vacuum environment and heated at 190°C / h The heating rate was raised to 600°C and kept for 3 hours, then cooled with the furnace, the metal tantalum container was opened in an argon atmosphere glove box, and the material obtained by the solid phase reaction was ground until it had no metallic luster. Then the ground material was sealed into a metal tantalum container for the second time, and the metal tantalum was placed in a vacuum environment, and the temperature was raised to 770° C. at a heating rate of 210° C. / h for 4 hours. Open the metal tantalum container in an argon atmosphere glove box, and grind the Li-Zn-Si ternary alloy comp...

Embodiment 2

[0061] The method for slowly oxidizing and decomposing LiZnGe ternary alloy compound to prepare nano-germanium material, comprising steps:

[0062] (1) In an argon atmosphere glove box, mix and seal elemental Li, Zn, and Ge in a molar ratio of 1:1:1 into a metal tantalum container, place the metal tantalum container in a vacuum environment, and heat at 80°C / h The heating rate was raised to 400°C for 12 hours, and then the temperature was raised to 850°C for 48 hours at a heating rate of 80°C / h. The metal tantalum container was opened in an argon atmosphere glove box, and the Li-Zn-Ge ternary alloy compound obtained by the solid-state reaction was ground until there was no metallic luster to obtain the LiZnGe ternary alloy compound.

[0063] (2) In an argon atmosphere glove box, put the LiZnGe ternary alloy compound powder into a glass container, and place the glass container in the air for 30 days until it is completely decomposed. Take 1g of powder and add it to 500ml of 1.2...

Embodiment 3

[0067] A method for preparing a nano-germanium material by decomposing a LiZnGe ternary alloy compound with a weak acid solution, comprising the steps of:

[0068] (1) LiZnGe ternary alloy compound was prepared as described in Example 2.

[0069] (2) Prepare an acidic buffer solution with pH=6 with glacial acetic acid, anhydrous sodium acetate and deionized water, the calculated molar ratio of glacial acetic acid and sodium acetate is 0.056:1; get 1g of LiZnGe ternary alloy compound powder and add 500ml of Acidic buffer solution and stirring magnets were put into a glass container with argon atmosphere; the glass container was immersed in a 30°C water bath, and the magnetic stirring was adjusted to produce vortex in the glass container. After 24 hours of uninterrupted stirring and reaction, the glass container was opened in the air. The solution in the glass container was filtered, the obtained precipitate was washed with deionized water, and vacuum-dried at 70° C. for 3 hours...

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Abstract

The invention provides a method for decomposing ternary alloys to prepare silicon or germanium nanometer materials. The method comprises the steps of solid-phase synthesis of Li-Zn-Si or Li-Zn-Ge ternary alloy compounds and preparation of the silicon or germanium nanometer materials by decomposition of the Li-Zn-Si or Li-Zn-Ge ternary alloy compounds. The used raw materials are low in production cost, free of poison and safe; and the method is mild in reaction condition, stable in process, high in yield, low in cost, free of complex aftertreatment process, suitable for scale production of the nanometer silicon or germanium materials and higher in market competitiveness. The prepared nanometer silicon or germanium materials are of porous structures, small in particle size (10-100 nm), narrow in particle size distribution, uniform in particle size, high in purity, low in oxygen, excellent in dispersibility and high in applicability.

Description

technical field [0001] The invention relates to a method for preparing silicon or germanium nanomaterials by decomposing ternary alloys, and belongs to the technical field of nanomaterial preparation. Background technique [0002] Silicon and germanium are important semiconductor materials and have a wide range of uses in the field of optoelectronics. The corresponding nanomaterials have great potential in aerospace, nuclear physics detection, optical fiber communication, infrared optics, solar cells, chemical catalysts, biomedicine, lithium-ion batteries and other fields. particularly important applications. [0003] The current preparation methods of silicon and germanium nanomaterials are divided into two categories: physical method and chemical method. The physical method mainly uses silicon or germanium as a raw material, and uses heating evaporation, laser ablation, magnetron sputtering, etc. to obtain atomic vapor or high-temperature plasma of silicon or germanium, a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C24/00B22F9/30C01B33/021B82Y40/00
CPCB22F9/30B82Y40/00C01B33/021C22C24/00
Inventor 夏盛清贺彦清刘超
Owner SHANDONG UNIV
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