Zinc stannite-oxide perovskite heterojunction based on copper-zinc-tin-sulfur/bismuth-iron-chromium-oxygen

A technology of bismuth iron chrome oxide and kesterite, applied in sustainable manufacturing/processing, climate sustainability, semiconductor devices, etc., can solve problems such as transmission layer matching, reduce compounding, improve quality, and improve overall performance Effect

Active Publication Date: 2019-10-18
QINGDAO UNIV OF SCI & TECH
View PDF2 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] One of the objectives of the present invention is to provide a kesterite-inorganic oxide perovskite heterojunction structure, which can realize efficient electron- Separation and transport of holes to solve problems such as transport layer matching of inorganic oxide perovskite materials

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Zinc stannite-oxide perovskite heterojunction based on copper-zinc-tin-sulfur/bismuth-iron-chromium-oxygen
  • Zinc stannite-oxide perovskite heterojunction based on copper-zinc-tin-sulfur/bismuth-iron-chromium-oxygen
  • Zinc stannite-oxide perovskite heterojunction based on copper-zinc-tin-sulfur/bismuth-iron-chromium-oxygen

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0046] Such as figure 1 Shown, a CuZnSeS / BFeCrO ​​perovskite heterojunction, including growth on Pt / Ti / SiO 2 BiFeCrO ​​and CuZnSeS bilayer films on Si(100) single crystal substrates.

[0047] The specific process of preparing the heterojunction in this example is as follows:

[0048] Select the bismuth iron chromium oxide target with the element molar ratio of Bi:Fe:Cr:O=1:0.5:0.5:3, and select the copper zinc with the element molar ratio Cu:Zn:Sn:S=1.9:1.25:1:4.15 Selenium sulfur target.

[0049] The substrates were ultrasonically cleaned in distilled water, 99.5% acetone, distilled water, and 99.7% isopropanol solution for 10 minutes in sequence, and then dried and placed in a plasma cleaning machine for 6 minutes and set aside.

[0050] Fix the bismuth-iron-chromium-oxygen target on the target holder and put it into the deposition cabin of the pulse laser deposition equipment for standby; fix the pretreated Pt substrate on the sample stage and place it in the deposition ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides a zinc stannite-oxide perovskite heterojunction based on copper-zinc-tin-sulfur / bismuth-iron-chromium-oxygen, belongs to the technical field of semiconductor devices, and discloses a method for accurately preparing a copper-zinc-tin-sulfur / bismuth-iron-chromium-oxygen heterojunction. The heterojunction is obtained by in-situ deposition by the pulse laser deposition technology. The bismuth-iron-chromium-oxygen and the copper-zinc-tin-sulfur are greatly matched to form a heterojunction structure, the advantages of the copper-zinc-tin-sulfur material in carrier transport can be exerted, the spontaneous polarization mechanism of the ferroelectric characteristics of the bismuth-iron-chromium-oxygen is fully utilized, the electric field in the junction region is enhanced,high-efficiency electron-hole pair separation is realized, recombination is reduced and the carrier transport efficiency is finally enhanced. The copper-zinc-selenium-sulfur / bismuth-iron-chromium-oxygen heterojunction has the advantages of accurate preparation process, high controllability, simple method and low cost. The obtained heterojunction structure can be used for manufacturing the relatedsemiconductor functional devices and is of great significance to the practical use of inorganic oxide perovskite.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and relates to a copper-zinc-tin-sulfur / bismuth-iron-chromium-oxygen heterojunction with ferroelectric properties. Background technique [0002] Copper-zinc-tin-sulfur (CZTS) thin films have adjustable bandgap (1.3-1.5eV), high absorption coefficient (greater than 10 4 cm -1 ) and good resistance to light depletion, and its components are abundant in the earth's crust, environmentally friendly, non-toxic and harmless, and are very suitable for the preparation of high-efficiency, stable performance, and low-cost optoelectronic devices, such as absorbers for thin-film solar cells layer, electron transport layer, hole transport layer or photodetector material, etc. In recent years, the preparation technology of copper-zinc-tin-sulfur thin film has developed rapidly, but the existing process has problems such as high equipment and process investment costs, and the production process w...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/072H01L31/0336H01L31/18
CPCH01L31/0336H01L31/072H01L31/18Y02E10/50Y02P70/50
Inventor 马帅董立峰夏丰金
Owner QINGDAO UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap