Preparation method of nitrogen-sulfur-phosphorus doped porous graphene oxide material and application of nitrogen-sulfur-phosphorus doped porous graphene oxide material

A technology of element doping and graphene, applied in chemical instruments and methods, non-metallic elements, inorganic chemistry, etc., can solve problems such as no literature reports, and achieve the effect of improving graphene performance, high specific capacitance, and controllable conditions

Inactive Publication Date: 2019-10-29
HUNAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, there is currently no literature report on the application of ...

Method used

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  • Preparation method of nitrogen-sulfur-phosphorus doped porous graphene oxide material and application of nitrogen-sulfur-phosphorus doped porous graphene oxide material
  • Preparation method of nitrogen-sulfur-phosphorus doped porous graphene oxide material and application of nitrogen-sulfur-phosphorus doped porous graphene oxide material
  • Preparation method of nitrogen-sulfur-phosphorus doped porous graphene oxide material and application of nitrogen-sulfur-phosphorus doped porous graphene oxide material

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Experimental program
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Effect test

Embodiment 1

[0041] S1. Weigh the raw material graphene oxide and ultrasonically disperse it in deionized water. The concentration of the obtained graphene oxide dispersion is 0.5 mg / mL, then add 30wt% hydrogen peroxide as a pore-forming agent under strong stirring, and add the volume of hydrogen peroxide and graphite oxide The volume ratio of the olefin dispersion is 1:5, and then the mixed solution is transferred to a hydrothermal reactor, and the reaction is continuously stirred. The reaction temperature is 100° C., and the reaction time is 2 hours. After the reaction, cool to room temperature.

[0042] S2. Centrifuge the product after the reaction obtained in the above step S1, wash with deionized water, and freeze-dry to obtain three-dimensional porous graphene oxide, and ultrasonically disperse the obtained three-dimensional porous graphene oxide solid powder sample into deionized water again, and then Add dopant L-cysteine, ammonium dihydrogen phosphate under strong stirring, the mas...

Embodiment 2

[0047] S1. Weigh the raw material graphene oxide and ultrasonically disperse it in deionized water. The concentration of the obtained graphene oxide dispersion is 2 mg / mL, and then add 30wt% hydrogen peroxide as a pore-forming agent under strong stirring. The volume ratio of the olefin dispersion is 1:5, and then the mixed solution is transferred to a hydrothermal reactor, and the reaction is continuously stirred. The reaction temperature is 100° C., and the reaction time is 2 hours. After the reaction, cool to room temperature.

[0048] S2. Centrifuge the product after the reaction obtained in the above step S1, wash with deionized water, and freeze-dry to obtain three-dimensional porous graphene oxide, and ultrasonically disperse the obtained three-dimensional porous graphene oxide solid powder sample into deionized water again, and then Add dopant L-cysteine, ammonium dihydrogen phosphate under strong stirring, the mass ratio of porous graphene oxide, L-cysteine, and ammoniu...

Embodiment 3

[0053] S1. Weigh the raw material graphene oxide and ultrasonically disperse it in deionized water. The concentration of the obtained graphene oxide dispersion is 0.5 mg / mL, then add 30wt% hydrogen peroxide as a pore-forming agent under strong stirring, and add the volume of hydrogen peroxide and graphite oxide The volume ratio of the olefin dispersion is 1:5, and then the mixed solution is transferred to a hydrothermal reactor, and the reaction is continuously stirred. The reaction temperature is 100° C., and the reaction time is 2 hours. After the reaction, cool to room temperature.

[0054] S2. Centrifuge the product after the reaction obtained in the above step S1, wash with deionized water, freeze-dry to obtain three-dimensional porous graphene oxide, and ultrasonically disperse the obtained three-dimensional porous graphene oxide solid powder sample into deionized water again, and then Add dopant L-cysteine, ammonium dihydrogen phosphate under strong stirring, the mass ra...

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Abstract

The invention discloses a preparation method of a nitrogen-sulfur-phosphorus doped porous graphene oxide material and application of a nitrogen-sulfur-phosphorus doped porous graphene oxide material.According to the invention, a porous graphene oxide material doped with three elements is prepared by taking graphene oxide as a raw material, adding hydrogen peroxide in a hydrothermal condition forpore-forming and adding a dopant containing three elements of nitrogen,sulfur and phosphorus, and is applied to the electrode material of a supercapacitor. The three-dimensional porous structure is etched on the surface of graphene by using hydrogen peroxide with the strong oxidizing property, so that the specific surface area of a graphene material is further improved, the obtained porous graphene oxide is subjected to ultrasonic dispersion and then is fully mixed with a doping agent containing three elements of nitrogen, phosphorus and sulfur, nitrogen, sulfur and phosphorus heteroatoms areintroduced into the porous graphene oxide to improve the electrochemical performance of the graphene, and the porous graphene oxide is loaded on a conductive current collector to prepare a supercapacitor electrode, so that the capacitor obtains the better capacitance performance and has the good circulation stability.

Description

technical field [0001] The invention relates to the technical field of carbon material preparation, and more specifically, to a preparation method and application of a porous graphene oxide material doped with nitrogen, sulfur, and phosphorus. Background technique [0002] Exploring advanced energy storage technology to meet the needs of continuous development of science and technology is an important topic in the 21st century. Among the current energy storage devices, supercapacitors have shown great development prospects due to their high energy density, short charge and discharge time, long cycle life, maintenance-free, low self-discharge, good safety performance, and environmental friendliness. , which has attracted extensive research interest. However, the low energy density of supercapacitors, especially electric double layer supercapacitors, is the main reason hindering their development. For improving the performance of supercapacitors, since the performance of ele...

Claims

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Application Information

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IPC IPC(8): H01G11/30H01G11/36H01G11/24C01B32/198
CPCC01B32/198H01G11/24H01G11/30H01G11/36Y02E60/13
Inventor 陈宪宏刘纪雷朱裔荣陈晗
Owner HUNAN UNIV OF TECH
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