Frit for crystalline silicon solar cells, preparation method thereof, and silver paste

A technology of solar cells and glass frit, applied in conductive materials, circuits, photovoltaic power generation and other directions dispersed in non-conductive inorganic materials, can solve the problems of large shading loss, excessive loss, reducing the shading area of ​​electrodes, etc., reaching the glass transition temperature Low, improve the contact resistance, improve the effect of welding tension

Inactive Publication Date: 2019-12-20
四川东树新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Then, the larger the square resistance of the silicon wafer, the more the loss when the current is transmitted laterally. Therefore, more sub-gates are needed to reduce the loss during the lateral transmission of the current. However, the more sub-gates, the greater the shading loss. Therefore, it is The sub-gate needs to be made thinner to reduce the shading area of ​​the electrode

Method used

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  • Frit for crystalline silicon solar cells, preparation method thereof, and silver paste
  • Frit for crystalline silicon solar cells, preparation method thereof, and silver paste

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preparation example Construction

[0029] The preparation method of the glass frit for crystalline silicon solar cells is prepared by high-temperature melting and quenching method or sol-gel method.

[0030] The high-temperature melting and quenching method includes the following steps: taking the raw materials of each component, mixing them, and then melting them at a temperature of 1100-1300° C. for 30-80 minutes. After the melting, quenching the glass melt, Finally, it is pulverized and dried to obtain glass frit.

[0031] Preferably, the mixing can be carried out by using a three-dimensional mixer; stirring is carried out during the melting process for further homogenization.

[0032] Wherein, quenching adopts deionized water quenching or iron plate quenching.

[0033] Preferably, the crushing is carried out by planetary ball mill ball milling.

[0034]The present invention also provides a silver paste prepared by using the glass frit for crystalline silicon solar cells.

[0035] The silver paste is prep...

Embodiment 1

[0041] Embodiment 1 Preparation of glass frit for crystalline silicon solar cells

[0042] Take the raw materials according to the components in Table 1, mix and homogenize the raw materials with a three-dimensional mixer, then transfer them to an alumina crucible, and melt them at 1300°C for 60 minutes, stirring during the melting process; after the melting, The glass melt is quenched with deionized water, and finally ball milled and dried using a planetary ball mill to obtain powdered glass frits S1-S4 with a particle size distribution D50≤5 μm.

[0043] The glass transition temperature Tg and glass softening temperature Tf of the prepared powdered glass frits S1-S4 and commercially available glass frits were tested, and the results are shown in Table 1.

[0044] Table 1

[0045]

Embodiment 2

[0047] The glass frits of S1-S4 and D1 were respectively prepared according to the following methods to obtain SY1-SY4 and DY1 silver paste coatings.

[0048] Preparation method: fully mix 86.5wt% conductive silver powder, 2.5wt% glass frit, and 11wt% organic vehicle, use a three-roll mill to grind the slurry, use a scraper fineness agent to test the grinding fineness, and the slurry The grinding fineness is below 10μm to make silver paste. Among them, the number of silver paste paint made by using S1 glass frit is SY1, the number of silver paste paint made by using S2 glass frit is SY2, and the number of silver paste paint made by using S3 glass frit is SY3, which is made by using S4 glass frit The number of the silver paste coating is SY4, and the number of the silver paste coating made of D1 glass frit is DY1.

[0049] Wherein, the organic carrier is a mixture of ethyl cellulose, wood rosin, dibutyl phthalate and butyl carbitol acetate in a mass percentage of 1:1:5:4.

[...

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Abstract

The invention belongs to the technical field of conductive paste, and particularly relates to a frit for crystalline silicon solar cells, a preparation method of the frit, and a silver paste. The fritis prepared from the following components in percentage by mass: 5 to 20wt% of Tl2O3, 5 to 10wt% of PbO, 20 to 30 wt% of TeO2, 5 to 10 wt% of Bi2O3, 5 to 15 wt% of WO3, 0 to 5 wt% of SiO2, 10 to 15 wt% of ZnO and 5 to 15 wt% of alkali metal oxide R2O. The frit provided by the invention is used for preparing front silver paste suitable for crystalline silicon solar cells, so that the silver pasteis provided with excellent electrical properties and welding tension.

Description

technical field [0001] The invention belongs to the technical field of conductive paste, and in particular relates to a glass frit for crystalline silicon solar cells, a preparation method thereof and silver paste. Background technique [0002] As we all know, the main factors affecting the efficiency loss of solar cells are: grid line shielding factors, grid lines and their contact resistance factors, and carrier recombination factors. In order to solve these loss factors, the main solution in the market is: "high square resistance, shallow junction, dense planting", that is, to make the square resistance of silicon wafers higher, the PN junction of silicon wafers to be closer to the front surface, and the width of sub-gates of cells to be thinner. More. [0003] The square resistance of the silicon wafer is determined by the doping concentration. The higher the doping concentration, the lower the square resistance of the silicon wafer. However, a high doping concentration...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C03C12/00C03C8/24H01B1/22H01L31/0224
CPCC03C8/24C03C12/00H01B1/22H01L31/022425Y02E10/50
Inventor 乔梦书
Owner 四川东树新材料有限公司
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