Check patentability & draft patents in minutes with Patsnap Eureka AI!

Semiconductor heterojunction air-sensitive material and preparation method and application thereof

A gas-sensitive material and heterojunction technology, which is applied in the analysis of materials, material analysis by electromagnetic means, instruments, etc., can solve the problems of insufficient semiconductor compounding, long synthesis period, and high operating temperature, and achieve improved sensitivity and response recovery. Effects of time, high sensitivity, excellent performance

Active Publication Date: 2019-12-20
SHANDONG UNIV
View PDF12 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, intrinsic zinc oxide semiconductors have shortcomings in detecting low-concentration gases at low temperatures, such as low sensitivity, poor selectivity, and high operating temperature. For low concentration SO 2 Metal-oxide-semiconductor gas-sensing materials for gas detection
However, these methods have defects such as cumbersome operation, uneven semiconductor recombination, and long synthesis cycle. These defects also lead to these methods not being widely used in the preparation of compound semiconductor heterojunction materials.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor heterojunction air-sensitive material and preparation method and application thereof
  • Semiconductor heterojunction air-sensitive material and preparation method and application thereof
  • Semiconductor heterojunction air-sensitive material and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] A zinc oxide nickel oxide porous microsphere gas-sensing material, the gas-sensing material is a lamellar microsphere with a diameter of 2 μm and a specific surface of 20.9m 2 g -1 -23.9m 2 g -1 ,like Figure 4 shown.

[0045] Zinc acetate dihydrate Zn(CH 3 COO) 2 . 2H 2 O, nickel acetate tetrahydrate Ni(CH 3 COO) 2 . 4H 2 O is used as raw material, polyvinylpyrrolidone (PVP-K30) is used as surfactant and dispersant, deionized water is used as solvent, and the mass ratio of metal salt (zinc salt and nickel salt) to surfactant is 1:1.25. Then add 0.19 g of ammonium carbonate, react at 180° C. for 2 hours, wash and dry the product, and obtain a precursor of zinc oxide and nickel oxide. The prepared precursor was calcined at 450° C. for two hours to prepare zinc oxide nickel oxide microsphere gas-sensing material. The molar percentage of nickel oxide is 0.5%.

[0046] The X-ray powder diffraction pattern (XRD) of gained zinc oxide nickel oxide microsphere gas...

Embodiment 2

[0050] A zinc oxide nickel oxide porous microsphere gas-sensing material, the gas-sensing material is a lamellar microsphere with a diameter of 2 μm and a specific surface of 20.9m 2 g -1 -23.9m 2 g -1 .

[0051] Zinc acetate dihydrate Zn(CH 3 COO) 2 . 2H 2 O, nickel acetate tetrahydrate Ni(CH 3 COO) 2 . 4H 2 O is as raw material, polyvinylpyrrolidone (PVP-K30) is tensio-active agent double as dispersant, and deionized water is as solvent, and the mass ratio of metal salt and tensio-active agent is 1:1, and after the salt dissolves, add 0.1g ammonium carbonate, After reacting at 150°C for 1.8 hours, the product was washed and dried to obtain a precursor of zinc oxide and nickel oxide. The prepared precursor was calcined at 400° C. for two hours to prepare the zinc oxide nickel oxide microsphere gas-sensing material. The molar percentage of nickel oxide is 1%.

[0052] Prepare gas sensor with the zinc oxide nickel oxide composite material of embodiment 1, and carry...

Embodiment 3

[0057] Compared with Example 1, a zinc oxide nickel oxide porous microsphere gas-sensing material, the gas-sensing material is a lamellar microsphere with a diameter of 2 μm and a specific surface of 20.9 m 2 g -1 -23.9m 2 g -1 .

[0058] Zinc acetate dihydrate Zn(CH 3 COO) 2 . 2H 2 O, nickel acetate tetrahydrate Ni(CH 3 COO) 2 . 4H 2 O is as raw material, and polyvinylpyrrolidone (PVP-K30) is tensio-active agent double as dispersant, and deionized water is as solvent, and the mass ratio of metal salt and tensio-active agent is 1:1.5, after the salt dissolves, add 0.23g ammonium carbonate, After reacting at 200°C for 2.2 hours, the product was washed and dried to obtain a zinc oxide nickel oxide precursor. The prepared precursor was calcined at 500° C. for two and a half hours to prepare zinc oxide nickel oxide microsphere gas-sensing material. The molar percentage of nickel oxide is 0.25%.

[0059] Add the composite metal oxide gas-sensitive material prepared in ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Specific surfaceaaaaaaaaaa
Login to View More

Abstract

The invention relates a semiconductor heterojunction air-sensitive material and preparation method and application thereof. The air-sensitive material is of layered microsphere with a diameter being 1.6-2.5 micrometers, the specific area is 20.9-23.9m<2>g<-1>, the microsphere is a composite material comprising zinc oxide and nickel oxide, the composite material of the zinc oxide and the nickel oxide is hexagonal crystal, and the mole percent ratio of the nickel oxide accounts for 0.1-1%. The composite material has relatively rapid response speed, relatively high response value and relatively good selectivity within a range of 100-160 DEG C.

Description

technical field [0001] The invention belongs to the technical field of semiconductor gas-sensing material preparation, and in particular relates to a semiconductor heterojunction gas-sensing material and its preparation method and application. Background technique [0002] The information disclosed in this background section is only intended to increase the understanding of the general background of the present invention, and is not necessarily taken as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to those skilled in the art. [0003] With the rapid development of industry, the emission of toxic and flammable gases from urban industry and fossil energy combustion has also increased accordingly. Exhaust gases include nitrogen dioxide (NO 2 ), carbon monoxide (CO), sulfur dioxide (SO 2 ) and hydrogen sulfide (H 2 S), where sulfur dioxide is one of the most common air pollutants, forming acid rain, polluting the env...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01N27/00C01G53/04C01G9/03C01G9/02
CPCC01G9/02C01G9/03C01G53/04C01P2004/61C01P2006/12G01N27/00
Inventor 刘久荣刘伟司文旭吴莉莉王凤龙汪宙
Owner SHANDONG UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com