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Cleaning method of target material

A target material and cleaning technology, applied in the field of microelectronics, can solve the problems of high cleaning cost and large water consumption, and achieve the effect of reducing cleaning cost, reducing usage, and reducing processing pressure

Pending Publication Date: 2020-01-10
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method also has the step of using a high-pressure water gun for cleaning, which has the disadvantages of excessive water consumption and high cleaning costs

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] This embodiment provides a method for cleaning a target, comprising the following steps:

[0044] (1) The surface of the titanium target is coated with isopropanol, and then brushed. The specific operation is as follows:

[0045] (a) First, apply isopropanol on the unthreaded side of the titanium target, brush with a steel brush from inside to outside for 3 times, and then rinse with pure water for 45 seconds;

[0046] (b) Then apply isopropanol on the welding surface of the thread on the titanium target, use a steel brush to brush from the inside to the outside for 3 times, and then rinse with pure water for 45s;

[0047](2) Use ultrapure water to ultrasonically clean the scrubbed target for 12 minutes at 70°C;

[0048] (3) Use nitrogen to dry up the moisture on the surface of the target after ultrasonic cleaning, and then carry out vacuum drying for 60 minutes to obtain the cleaned target. The cleaned target is packaged in the atmosphere.

Embodiment 2

[0050] This embodiment provides a method for cleaning a target, comprising the following steps:

[0051] (1) The surface of the zirconium target is coated with acetone, and then brushed. The specific operation is as follows:

[0052] (a) First, apply acetone on the unthreaded side of the zirconium target, use a steel brush to brush from the inside to the outside for 3 times, and then rinse with pure water for 40 seconds;

[0053] (b) Then apply acetone on the welding surface of the threaded zirconium target, use a steel brush to brush from the inside to the outside for 3 times, and then rinse with pure water for 50 seconds;

[0054] (2) Use ultrapure water to ultrasonically clean the scrubbed target for 8 minutes at 80°C;

[0055] (3) Use argon to dry up the moisture on the surface of the target after ultrasonic cleaning, and then carry out vacuum drying for 50 minutes to obtain the cleaned target. The temperature of vacuum drying is 380°C, and the vacuum degree of vacuum dry...

Embodiment 3

[0057] This embodiment provides a method for cleaning a target, comprising the following steps:

[0058] (1) Coat the surface of the molybdenum target with isopropanol, and then brush it. The specific operation is as follows:

[0059] (a) First, apply isopropanol on the side of the molybdenum target that is not provided with threads, brush it with a steel brush from the inside to the outside for 4 times, and then rinse it with pure water for 60 seconds;

[0060] (b) Then apply isopropanol on the welding surface of the threaded molybdenum target, use a steel brush to brush 4 times from the inside to the outside, and then rinse with pure water for 30 seconds;

[0061] (2) Use ultrapure water to ultrasonically clean the scrubbed target for 10 minutes at 75°C;

[0062] (3) Use helium to dry the moisture on the surface of the target after ultrasonic cleaning, and then carry out vacuum drying treatment for 70 minutes to obtain the cleaned target. The temperature of vacuum drying is...

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PUM

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Abstract

The invention provides a cleaning method of a target material. The cleaning method of the target material comprises the following steps that (1), a cleaning agent is coated on the surface of the target material, and brushing is carried out; (2), the brushed target material is ultrasonically cleaned; and (3), inert gas is used to blow-dry water on the surface of the target material after ultrasoniccleaning, and then vacuum drying treatment is carried out to obtain the cleaned target material. According to the cleaning method of the target material, the target material does not need to be cleaned by using a high-pressure water gun, the cleaning method is simple, the consumption of the cleaning agent is low, the cleaning cost is reduced, moreover, the amount of waste liquid generated throughthe cleaning method is small, and the pressure of waste liquid treatment is favorably reduced.

Description

technical field [0001] The invention relates to the technical field of microelectronics, relates to a method for producing a target, and in particular to a method for cleaning a target. Background technique [0002] PVD coating technology refers to the use of physical methods to vaporize the material source-solid or liquid surface into gaseous atoms, molecules or parts of ionization into ions, and through the low-pressure gas (or plasma) process, deposit a certain special function on the surface of the substrate. thin film technology. The main methods of physical vapor deposition include vacuum evaporation, sputtering coating, arc plasma plating, ion coating or molecular beam epitaxy. [0003] Sputtering coating technology uses ions to bombard the surface of the target, and the phenomenon of knocking out the atoms of the target is sputtering. The deposition of atoms generated by sputtering on the surface of the substrate is called sputter coating. Usually, gas discharge i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23G5/00C23C14/34
CPCC23C14/3407C23G5/00
Inventor 姚力军潘杰边逸军王学泽杨恕鉴
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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