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A sn-doped β-ga 2 o 3 Preparation method of film solar-blind ultraviolet detector

An ultraviolet detector, -ga2o3 technology, applied in the field of ultraviolet detection, can solve the problems of high cost of membrane, toxic and harmful reaction source, slow response time, etc.

Active Publication Date: 2021-01-01
TAIYUAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0003] In order to solve the existing Sn-doped β-Ga 2 o 3 The cost of the film is expensive, the reaction source is toxic and harmful, the dark current of the detector is large and the response time is slow, etc. The present invention provides a Sn-doped β-Ga 2 o 3 Preparation method of film solar-blind ultraviolet detector

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  • A sn-doped β-ga <sub>2</sub> o <sub>3</sub> Preparation method of film solar-blind ultraviolet detector

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preparation example Construction

[0019] The invention provides a Sn doped β-Ga 2 o 3 The film preparation method is characterized in that: the preparation method is carried out according to the following steps:

[0020] (1) Ga 2 o 3 Powder, SnO 2 The powder and the carbon powder are mixed in a mass ratio of 0.05-1:0.05-1:1 and fully ground to obtain a solid mixed powder;

[0021] (2) Use the mixed powder as the reaction source, the distance between the reaction source and the substrate is 0.5cm-20cm, put it in a high-temperature tube furnace, the temperature of the reaction source is 900°C-1200°C, use chemical vapor deposition method, use oxygen as Oxygen source, inert gas as carrier gas, the flow ratio of oxygen and inert gas is 0.5-10mL / min: 0-100mL / min, the substrate temperature is 1000°C-1300°C, and the growth pressure is 1 Pa-10 5 Pa, the deposition time is 5 min-60 min, and Sn doped β-Ga is obtained on the substrate 2 o 3 membrane;

[0022] (3) In the Sn-doped β-Ga 2 o 3 A planar metal interd...

Embodiment 1

[0036] Ga 2 o 3 Powder, SnO 2 Powder and carbon powder are mixed in proportion and fully ground to obtain solid mixed powder, Ga 2 o 3 Powder, SnO 2 The mass ratio of powder to carbon powder mixed powder is 1:0.2:1; the mixed powder is placed in a ceramic boat as a reaction source, the ceramic boat is placed in a high-temperature tube furnace, and the substrate is placed in a high-temperature tube furnace. In the downwind direction of the ceramic boat, the downwind direction is the airflow direction of the mixed gas of oxygen and argon, and the distance between the reaction source and the substrate is 15cm; the ratio of oxygen and argon is 7mL / min: 30 mL / min; the substrate is sapphire; Heat the ceramic boat and the substrate to the preset temperature, the temperature of the reaction source is 1170 °C, and the temperature of the substrate is 1250 °C; use a vacuum pump to draw a vacuum to the system to achieve a growth vacuum, and the pressure is 30 Pa; Sn-doped β-Ga grown ...

Embodiment 2

[0039] Ga 2 o 3 Powder, SnO 2 Powder and carbon powder are mixed in proportion and fully ground to obtain solid mixed powder, Ga 2 o 3 Powder, SnO 2 The mass ratio of powder to carbon powder mixed powder is 1:0.5:1; the mixed powder is placed in a ceramic boat as a reaction source, the ceramic boat is placed in a high-temperature tube furnace, and the substrate is placed in a high-temperature tube furnace. In the downwind direction of the ceramic boat, the downwind direction is the airflow direction of the mixed gas of oxygen and argon, and the distance between the reaction source and the substrate is 15cm; the ratio of oxygen and argon is 7mL / min: 30 mL / min; the substrate is sapphire; Heat the ceramic boat and the substrate to the preset temperature, the temperature of the reaction source is 1170 °C, and the temperature of the substrate is 1250 °C; use a vacuum pump to draw a vacuum to the system to achieve a growth vacuum, and the pressure is 30 Pa; Sn-doped β-Ga grown ...

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Abstract

The invention discloses preparation methods of a Sn-doped beta-Ga2O3 film and a solar blind ultraviolet detector. The preparation methods comprise the following steps: mixing Ga2O3 powder, SnO2 powderand carbon powder according to a proportion to obtain solid mixed powder; putting the mixed powder as a reaction source into a high-temperature tubular furnace, and obtaining an Sn-doped beta-Ga2O3 film on a substrate by using a chemical vapor deposition method and taking oxygen as an oxygen source and an inert gas as a carrier gas; and preparing a planar metal interdigital electrode structure onthe Sn-doped beta-Ga2O3 film by adopting an interdigital electrode preparation process to obtain a detector. The detector has the advantages of adjustable detection range, adjustable dark current, adjustable responsivity, adjustable response speed and good stability, repeatability and reliability, and has a very wide application prospect in fields such as ultraviolet intensity calibration, high-voltage electric leakage detection, water purification, sterilization and disinfection, ultraviolet biosensing, ultraviolet communication, ozone cavity monitoring, high-temperature flame monitoring andmissile warning.

Description

technical field [0001] The invention relates to a Sn-doped β-Ga 2 o 3 The preparation method of the membrane and the preparation method of the sun-blind ultraviolet detector belong to the technical field of ultraviolet detection. Background technique [0002] Solar-blind ultraviolet (200-280 nm) detectors have a wide range of applications in the field of ultraviolet photoelectric conversion, such as: ultraviolet light intensity calibration, missile early warning, high temperature flame monitoring, ultraviolet communication, biochemical substance detection, sterilization, high voltage leakage detection and ozone Void monitoring, etc., β-Ga 2 o 3 , the most stable Ga 2 o 3 Phase, without considering phase separation (AlGaN and other multi-element alloys have phase separation problems), and has the characteristics of stable structure, suitable band gap (4.9 eV) and high breakdown electric field, it is one of the candidate materials for the preparation of solar-blind ultrav...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/20H01L31/108H01L31/032C23C16/40
CPCC23C16/404H01L31/0321H01L31/108H01L31/20Y02E10/50Y02P70/50
Inventor 范明明曹铃李秀燕
Owner TAIYUAN UNIV OF TECH
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