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Aluminum nitride film and preparation method and application thereof

A technology of aluminum nitride film and aluminum nitride, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as lattice mismatch and mechanical damage between the aluminum nitride layer and the substrate, and achieve Avoid mechanical damage, reduce impact, and improve quality

Pending Publication Date: 2020-04-21
MAANSHAN JASON SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The invention provides a method for preparing an aluminum nitride film, which is used to solve the problem of lattice mismatch between the aluminum nitride layer and the substrate caused by the existing method for preparing the aluminum nitride film and the possibility of mechanical damage during subsequent mechanical peeling. damage problem

Method used

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  • Aluminum nitride film and preparation method and application thereof
  • Aluminum nitride film and preparation method and application thereof

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Experimental program
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Effect test

Embodiment 1

[0057] Step 1: After cleaning the substrate, put it into the magnetron sputtering reaction chamber, control the temperature of the reaction chamber at 150°C, put single crystal silicon into it and let 15 sccm of nitrogen into it, and sputter and grow the porous structure on the substrate. The silicon nitride layer was grown for 200 minutes to obtain a silicon nitride layer with a thickness of 1000 nm;

[0058] Step 2: Put the grown silicon nitride layer into a metal-organic chemical vapor deposition (MOCVD) device, control the temperature in the reaction chamber of the device to 600°C, and the pressure to 200mbar, and feed 50ml of trimethylaluminum and 10,000ml of NH 3 , growing an aluminum nitride buffer layer on the silicon nitride layer, and after growing for 10 minutes, an aluminum nitride buffer layer with a thickness of 25nm is obtained;

[0059] Step 3: Control the temperature of the reaction chamber to 1150°C and the pressure to 50mbar, and feed 300ml of trimethylalumi...

Embodiment 2

[0063] Step 1: After cleaning the substrate, put it into the magnetron sputtering reaction chamber, control the temperature of the reaction chamber at 150°C, put single crystal silicon into it and let 15 sccm of nitrogen into it, and sputter and grow the porous structure on the substrate. The silicon nitride layer was grown for 240min to obtain a silicon nitride layer with a thickness of 1200nm;

[0064] Step 2: Put the grown silicon nitride layer into a metal-organic chemical vapor deposition (MOCVD) device, control the temperature in the reaction chamber of the device to 600°C, and the pressure to 200mbar, and feed 50ml of trimethylaluminum and 10,000ml of NH 3 , growing an aluminum nitride buffer layer on the silicon nitride layer, and after growing for 10 minutes, an aluminum nitride buffer layer with a thickness of 25nm is obtained;

[0065] Step 3: Control the temperature of the reaction chamber to 1150°C, the pressure to 50mbar, and feed 400ml of trimethylaluminum and 1...

Embodiment 3

[0069] Step 1: After cleaning the substrate, put it into the magnetron sputtering reaction chamber, control the temperature of the reaction chamber at 120°C, put single crystal silicon into it and let 15 sccm of nitrogen into it, and sputter and grow the porous structure on the substrate. The silicon nitride layer was grown for 280min to obtain a silicon nitride layer with a thickness of 1400nm;

[0070] Step 2: Put the grown silicon nitride layer into a metal-organic chemical vapor deposition (MOCVD) device, control the temperature in the reaction chamber of the device to 600°C, and the pressure to 200mbar, and feed 50ml of trimethylaluminum and 10,000ml of NH 3 , growing an aluminum nitride buffer layer on the silicon nitride layer, and after growing for 10 minutes, an aluminum nitride buffer layer with a thickness of 25nm is obtained;

[0071] Step 3: Control the temperature of the reaction chamber to 1150°C, the pressure to 50mbar, and feed 400ml of trimethylaluminum and 1...

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Abstract

The invention provides an aluminum nitride film and a preparation method and application thereof. The preparation method of the aluminum nitride film comprises the following steps: step 1, growing a silicon nitride layer with a porous structure on a substrate; step 2, putting the silicon nitride layer into an equipment reaction chamber, controlling the temperature of the reaction chamber to be 600-1000 DEG C and the pressure to be 20-200 mbar, and growing an aluminum nitride buffer layer on the surface of the silicon nitride layer; and step 3, controlling the temperature of the reaction chamber to be 1100-1500 DEG C and the pressure to be 20-200 mbar, and growing an aluminum nitride layer on the surface of the aluminum nitride buffer layer. With application of the preparation method provided by the invention, line defects and dislocations occurring in the growth process of the aluminum nitride are greatly annihilated, and the aluminum nitride layer with low defect concentration and high crystal quality is obtained; meanwhile, the problem of possible mechanical damage during subsequent mechanical stripping of the aluminum nitride layer and the substrate is avoided.

Description

technical field [0001] The invention relates to the technical field of light emitting diodes, in particular to an aluminum nitride film and its preparation method and application. Background technique [0002] Aluminum nitride (AlN) belongs to the third-generation wide bandgap semiconductor material, which has the advantages of high bandgap width, high breakdown electric field, high thermal conductivity, high electron saturation rate and high radiation resistance. AlN crystal has a stable hexagonal wurtzite structure and has the largest direct band gap of about 6.2eV among III-V semiconductor materials, and is an important blue and ultraviolet luminescent material. It has high thermal conductivity, high resistivity, strong breakdown field, and small dielectric coefficient. It is an excellent electronic material for high-temperature, high-frequency and high-power devices. Moreover, AlN oriented along the c-axis has very good piezoelectric properties and high-speed propagatio...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L33/00H01L33/12
CPCH01L21/02458H01L21/02439H01L21/02502H01L21/0254H01L21/0242H01L21/0262H01L33/0075H01L33/0066H01L33/12
Inventor 徐孝灵黄小辉王小文康建郑远志陈向东
Owner MAANSHAN JASON SEMICON CO LTD