Method for preparing organic solar cell with vertical phase gradient distribution photoactive layer by oscillation-assisted spin-coating process
A technology of solar cells and photoactive layers, applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problems of low photogenerated carrier transport and interface transfer efficiency, poor phase separation in the photoactive layer, and high carrier recombination Probability and other issues, to achieve the effect of optimizing the phase separation of the donor/acceptor inside the photoactive layer, increasing the electron mobility, and improving the contact situation
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[0034] Example 1 (control group):
[0035] (1) Clean a substrate composed of a transparent substrate 1 and a transparent conductive cathode ITO 2 with a surface roughness less than 1 mm, and dry it with nitrogen after cleaning;
[0036] (2) Spin-coating ZnO (5000rpm, 50s, 40nm) on the surface of the transparent conductive cathode ITO 2 to prepare the cathode buffer layer 3, and subject the formed film to thermal annealing (200°C, 2h);
[0037] (3) Drop PBDB-T:ITIC (1:1, 8mg / ml) solution on the cathode buffer layer 3, and prepare the photoactive layer 4 (2000rpm, 40s, 110nm) by spin coating process;
[0038] (4) PBDB-T at room temperature: ITIC photoactive layer 4 is placed in the glove box for 10 minutes;
[0039] (5) MoO3 anode buffer layer 5 (15nm) is evaporated on the photoactive layer 4;
[0040] (6) A metal anode Ag (100nm) is evaporated on the anode buffer layer;
[0041] (7) Under standard test conditions: AM 1.5, 100mW / cm 2 , The measured open circuit voltage (VOC) = 0.83 V, short...
Example Embodiment
[0042] Example 2:
[0043] (1) Clean a substrate composed of a transparent substrate 1 and a transparent conductive cathode ITO 2 with a surface roughness less than 1 nm, and dry it with nitrogen after cleaning;
[0044] (2) Spin-coating ZnO (5000rpm, 50s, 40nm) on the surface of the transparent conductive cathode ITO 2 to prepare the cathode buffer layer 3, and subject the formed film to thermal annealing (200°C, 2h);
[0045] (3) Drip PBDB-T:ITIC (1:1, 8mg / ml) solution on the cathode buffer layer 3, and perform ultrasonic treatment (1min, 20kHz) on the substrate;
[0046] (4) The photoactive layer 4 is prepared by spin coating process (2000rpm, 40s, 110nm);
[0047] (5) PBDB-T at room temperature: ITIC photoactive layer 4 is placed in the glove box for 10 minutes;
[0048] (6) MoO3 anode buffer layer 5 (15nm) is evaporated on the photoactive layer 4;
[0049] (7) A metal anode Ag (100nm) is evaporated on the anode buffer layer;
[0050] (8) Under standard test conditions: AM 1.5, 100mW / c...
Example Embodiment
[0051] Example 3:
[0052] (1) Clean a substrate composed of a transparent substrate 1 and a transparent conductive cathode ITO 2 with a surface roughness less than 1 nm, and dry it with nitrogen after cleaning;
[0053] (2) Spin-coating ZnO (5000rpm, 50s, 40nm) on the surface of the transparent conductive cathode ITO 2 to prepare the cathode buffer layer 3, and subject the formed film to thermal annealing (200°C, 2h);
[0054] (3) Drip PBDB-T:ITIC (1:1, 8mg / ml) solution on the cathode buffer layer 3, and perform ultrasonic treatment (1min, 30kHz) on the substrate;
[0055] (4) The photoactive layer 4 is prepared by spin coating process (2000rpm, 40s, 110nm);
[0056] (5) PBDB-T at room temperature: ITIC photoactive layer 4 is placed in the glove box for 10 minutes;
[0057] (6) MoO is evaporated on the photoactive layer 4 3 Anode buffer layer 5 (15nm);
[0058] (7) A metal anode Ag (100nm) is evaporated on the anode buffer layer;
[0059] (8) Under standard test conditions: AM 1.5, 100mW / ...
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