Method for preparing organic solar cell with vertical phase gradient distribution photoactive layer by oscillation-assisted spin-coating process

A technology of solar cells and photoactive layers, applied in photovoltaic power generation, circuits, electrical components, etc., can solve the problems of low photogenerated carrier transport and interface transfer efficiency, poor phase separation in the photoactive layer, and high carrier recombination Probability and other issues, to achieve the effect of optimizing the phase separation of the donor/acceptor inside the photoactive layer, increasing the electron mobility, and improving the contact situation

Active Publication Date: 2020-05-15
UNIV OF ELECTRONIC SCI & TECH OF CHINA
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a method for preparing an organic solar cell with a vertical phase gradient distribution photoactive layer by an oscillation-assisted spin coating process, aiming to solve the problem of poor phase separation in the photoactive layer of the non

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing organic solar cell with vertical phase gradient distribution photoactive layer by oscillation-assisted spin-coating process
  • Method for preparing organic solar cell with vertical phase gradient distribution photoactive layer by oscillation-assisted spin-coating process
  • Method for preparing organic solar cell with vertical phase gradient distribution photoactive layer by oscillation-assisted spin-coating process

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0034] Example 1 (control group):

[0035] (1) Clean a substrate composed of a transparent substrate 1 and a transparent conductive cathode ITO 2 with a surface roughness less than 1 mm, and dry it with nitrogen after cleaning;

[0036] (2) Spin-coating ZnO (5000rpm, 50s, 40nm) on the surface of the transparent conductive cathode ITO 2 to prepare the cathode buffer layer 3, and subject the formed film to thermal annealing (200°C, 2h);

[0037] (3) Drop PBDB-T:ITIC (1:1, 8mg / ml) solution on the cathode buffer layer 3, and prepare the photoactive layer 4 (2000rpm, 40s, 110nm) by spin coating process;

[0038] (4) PBDB-T at room temperature: ITIC photoactive layer 4 is placed in the glove box for 10 minutes;

[0039] (5) MoO3 anode buffer layer 5 (15nm) is evaporated on the photoactive layer 4;

[0040] (6) A metal anode Ag (100nm) is evaporated on the anode buffer layer;

[0041] (7) Under standard test conditions: AM 1.5, 100mW / cm 2 , The measured open circuit voltage (VOC) = 0.83 V, short...

Example Embodiment

[0042] Example 2:

[0043] (1) Clean a substrate composed of a transparent substrate 1 and a transparent conductive cathode ITO 2 with a surface roughness less than 1 nm, and dry it with nitrogen after cleaning;

[0044] (2) Spin-coating ZnO (5000rpm, 50s, 40nm) on the surface of the transparent conductive cathode ITO 2 to prepare the cathode buffer layer 3, and subject the formed film to thermal annealing (200°C, 2h);

[0045] (3) Drip PBDB-T:ITIC (1:1, 8mg / ml) solution on the cathode buffer layer 3, and perform ultrasonic treatment (1min, 20kHz) on the substrate;

[0046] (4) The photoactive layer 4 is prepared by spin coating process (2000rpm, 40s, 110nm);

[0047] (5) PBDB-T at room temperature: ITIC photoactive layer 4 is placed in the glove box for 10 minutes;

[0048] (6) MoO3 anode buffer layer 5 (15nm) is evaporated on the photoactive layer 4;

[0049] (7) A metal anode Ag (100nm) is evaporated on the anode buffer layer;

[0050] (8) Under standard test conditions: AM 1.5, 100mW / c...

Example Embodiment

[0051] Example 3:

[0052] (1) Clean a substrate composed of a transparent substrate 1 and a transparent conductive cathode ITO 2 with a surface roughness less than 1 nm, and dry it with nitrogen after cleaning;

[0053] (2) Spin-coating ZnO (5000rpm, 50s, 40nm) on the surface of the transparent conductive cathode ITO 2 to prepare the cathode buffer layer 3, and subject the formed film to thermal annealing (200°C, 2h);

[0054] (3) Drip PBDB-T:ITIC (1:1, 8mg / ml) solution on the cathode buffer layer 3, and perform ultrasonic treatment (1min, 30kHz) on the substrate;

[0055] (4) The photoactive layer 4 is prepared by spin coating process (2000rpm, 40s, 110nm);

[0056] (5) PBDB-T at room temperature: ITIC photoactive layer 4 is placed in the glove box for 10 minutes;

[0057] (6) MoO is evaporated on the photoactive layer 4 3 Anode buffer layer 5 (15nm);

[0058] (7) A metal anode Ag (100nm) is evaporated on the anode buffer layer;

[0059] (8) Under standard test conditions: AM 1.5, 100mW / ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Concentrationaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a method for preparing an organic solar cell with a vertical phase gradient distribution photoactive layer by an oscillation-assisted spin-coating process. The organic solar cell adopts an inversion structure and sequentially comprises a substrate, a transparent conductive cathode ITO, a ZnO cathode buffer layer, a photoactive layer, an MoO3 anode buffer layer and a metalanode from bottom to top. Before the spin coating of the active layer, the ultrasonic oscillation is carried out on an active layer solution dropwise covering the ZnO cathode buffer layer, so that the solution is promoted to form the vertical phase gradient distribution morphology that a micromolecular non-fullerene material with smaller volume is deposited below the solution and a polymer molecular material with larger volume is enriched above the solution, and the problems that the separation and transmission of the photon-generated carriers and the transmission efficiency between interfaces are low due to the poor internal phase separation of a non-fullerene system photoactive layer, so that a device has higher interface contact resistance and higher carrier recombination probability,and finally the performance of the device is reduced, are solved.

Description

technical field [0001] The invention relates to the technical field of organic polymer photovoltaic devices or organic semiconductor thin-film solar cells, in particular to a method for preparing an organic solar cell with a vertical phase gradient distribution photoactive layer by an oscillation-assisted spin coating process. Background technique [0002] With the rapid development of the world economy and the updating of science and technology, the human demand for energy is increasing day by day. However, the two major problems of fossil energy reserves and environmental pollution caused by the excessive use of traditional fossil energy have also emerged. Therefore, The development and utilization of new clean energy is considered to be a key project in the new century. In this context, solar energy, as a renewable green energy, has attracted extensive attention from researchers for its inexhaustible, inexhaustible, widely distributed, completely green and non-polluting c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L51/42H01L51/48
CPCH10K71/12H10K30/451Y02E10/549
Inventor 张大勇杨根杰李嘉文于军胜
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products