Preparation method of area light source DFLED lamp capable of emitting light in delayed mode

Abstract

The invention discloses a preparation method of an area light source DFLED lamp capable of emitting light in delayed mode. The preparation method comprises the steps of spin-coating, spray-coating orroll-coating a conductive tin indium oxide film with an aniline and polyvinyl carbazole mixed solution, and drying to form an electron hole layer; spin-coating, spray-coating or roll-coating CsPbBr3 quantum dots on the electron hole layer; spin-coating, spray-coating and roll-coating zinc oxide sol prepared by chemical combination on the CsPbBr3 quantum dot light-emitting layer to form an electrontransport layer, and carrying out vacuum evaporation on the electron transport layer to form an aluminum electrode; adhering wires on the electron transport layer and the aluminum electrode by usingconductive silver adhesive respectively; spraying, shower-coating or roll-coating long-afterglow UV paint emitting blue-green light on the other surface of the conductive tin indium oxide film, and forming a time-delay light-emitting area light source film through light curing; and bonding an aluminum electrode on the upper layer of the uniformly brushed heat-conducting insulating silica gel on aheat dissipation aluminum plate to obtain the area light source DFLED lamp with the time-delay light-emitting effect.

Description

technical field [0001] The invention relates to the manufacture of a lamp, in particular to a method for preparing a time-delayed surface light source DFLED lamp. Background technique [0002] At present, with the comprehensive promotion and application of LED lighting lamps, it has brought huge space for lighting energy saving and consumption reduction. LED lighting can control the lighting brightness of lamps and lanterns in real time through current, which is the technical basis of current urban smart lighting. The lamp beads in LED lamps are generally made of blue-emitting semiconductor chips and yellow-emitting phosphors by gluing and packaging, and the coupling of blue base light and yellow base light forms a white light source. The semiconductor PN junction of the light source chip will generate heat under the action of current. Because the light-emitting core in the lamp bead is encapsulated by glue, this will affect the heat dissipation of the PN junction in the chi...

AI Technical Summary

Problems solved by technology

The semiconductor PN junction of the light source chip will generate heat under the action of current. Because the light-emitting core in the lamp bead is encapsulated by glue, this will affect the heat dissipation of the PN junction in the chip. Practice has shown that when the temperature of the PN junction in the chip is greater than 70 0 When C is above, the lighting source will cause a large light attenuation phenomenon

At the same time, because the high-power lamps are composed of single lamp beads, and the single lamp beads with higher power are easy to cause glare.