Preparation method of area light source DFLED lamp capable of emitting light in delayed mode

A technology of surface light sources and lamps, which is applied to semiconductor devices of light-emitting elements, light sources, lighting and heating equipment, etc. It can solve the problems of large light decay of lighting sources, affecting heat dissipation of PN junctions in chips, glare, etc., and achieves small light decay of light sources , improve the viewing distance, the effect of small heat

Pending Publication Date: 2020-06-05
ANHUI ZHONGYI NEW MATERIAL TECH CO LTD
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AI Technical Summary

Problems solved by technology

The semiconductor PN junction of the light source chip will generate heat under the action of current. Because the light-emitting core in the lamp bead is encapsulated by glue, this will affect the heat dissipation of the PN junction in the chip. Practice has shown that when the temperatu

Method used

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Effect test

Embodiment Construction

[0014] A method for preparing a time-delayed luminous surface light source DFLED lamp is carried out according to the following steps:

[0015] 1) Make CsPbBr 3 quantum dot

[0016] cesium carbonate CsCO 3 , Octadecene ODE, and oleic acid OA are configured in parts by weight of 1:60~100:4~8, under the protection of one or more mixed gases of nitrogen, argon or helium, and at a temperature of 130~150°C cesium carbonate CsCO 3 All dissolved in octadecene and oleic acid mixture, then add 0.8-1 weight part of lead bromide PbBr 2 and 6 to 8 parts by weight of oleylamine OLA, and the temperature is raised to 160 to 180°C, reacted for 1 to 15 minutes, and cooled by water to produce CsPbBr with a wavelength of 600 to 780nm in the emission spectrum 3 quantum dot; spare;

[0017] 2) On one side of the conductive tin indium oxide ITO film, spin-coat, spray or roll-coat the mixture of aniline and polyvinylcarbazole, the coating thickness is 15-100nm, and then 0 C~150 0 Dry at a tem...

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Abstract

The invention discloses a preparation method of an area light source DFLED lamp capable of emitting light in delayed mode. The preparation method comprises the steps of spin-coating, spray-coating orroll-coating a conductive tin indium oxide film with an aniline and polyvinyl carbazole mixed solution, and drying to form an electron hole layer; spin-coating, spray-coating or roll-coating CsPbBr3 quantum dots on the electron hole layer; spin-coating, spray-coating and roll-coating zinc oxide sol prepared by chemical combination on the CsPbBr3 quantum dot light-emitting layer to form an electrontransport layer, and carrying out vacuum evaporation on the electron transport layer to form an aluminum electrode; adhering wires on the electron transport layer and the aluminum electrode by usingconductive silver adhesive respectively; spraying, shower-coating or roll-coating long-afterglow UV paint emitting blue-green light on the other surface of the conductive tin indium oxide film, and forming a time-delay light-emitting area light source film through light curing; and bonding an aluminum electrode on the upper layer of the uniformly brushed heat-conducting insulating silica gel on aheat dissipation aluminum plate to obtain the area light source DFLED lamp with the time-delay light-emitting effect.

Description

technical field [0001] The invention relates to the manufacture of a lamp, in particular to a method for preparing a time-delayed surface light source DFLED lamp. Background technique [0002] At present, with the comprehensive promotion and application of LED lighting lamps, it has brought huge space for lighting energy saving and consumption reduction. LED lighting can control the lighting brightness of lamps and lanterns in real time through current, which is the technical basis of current urban smart lighting. The lamp beads in LED lamps are generally made of blue-emitting semiconductor chips and yellow-emitting phosphors by gluing and packaging, and the coupling of blue base light and yellow base light forms a white light source. The semiconductor PN junction of the light source chip will generate heat under the action of current. Because the light-emitting core in the lamp bead is encapsulated by glue, this will affect the heat dissipation of the PN junction in the chi...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56F21K9/90F21Y115/10
CPCF21K9/90F21Y2115/10H10K50/115H10K71/00
Inventor 冯守中王军李洁冒卫星刘立湘
Owner ANHUI ZHONGYI NEW MATERIAL TECH CO LTD
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