Preparation method of high-temperature wave-transparent silicon nitride radome
A high-temperature wave-transmitting and radome technology, which is applied in the direction of the radiation unit cover, can solve the problems of low toughness of the radome, difficult machining, poor formability, etc., and achieve high ablation resistance, mechanical properties and broadband wave-transmitting performance Excellent, high preform rigidity effect
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[0055] Step 4. Preparation of boron nitride interface and silicon nitride substrate
[0056] The degummed fiber preform is placed in a deposition furnace, and a layer of uniform boron nitride interface with a thickness of 500-800 nm is deposited on the silicon nitride fiber preform by CVI technology. Then, the silicon nitride substrate is prepared by the CVI process, and after 180-360 hours of deposition, the material is separated from the graphite mold (that is, demolded), and a semi-finished radome with a certain strength and high formability is obtained. Then, using the PIP process, the silicon nitride substrate is further prepared on the semi-finished product of the radome. After 2 to 5 dipping-cracking cycles, the porosity is 10-40%, and the density is 1.6-2.2g / cm 3 Si 3 N 4f / Si 3 N 4 Composite radome.
[0057] Preparation of anti-ablation nose cone for split radome
[0058] According to the structural requirements of the split radome, the silicon-based body of the...
Embodiment 1
[0071] Step 1. Graphite mold preparation. The specific process is:
[0072] Step 1.1 Design and prepare a graphite mold according to the size requirements of the silicon nitride radome and the requirements of a split or integrated structure.
[0073] Step 1.2 Place the graphite mold in a chemical vapor deposition furnace, and deposit a layer of silicon nitride coating with a thickness of 50-100 μm on the surface to prevent the carbon element from the surface of the mold from diffusing to the fiber preform, so as to ensure a good radome. Wave performance. The coating deposition process is as follows: silicon tetrachloride (SiCl 4 ), ammonia (NH 3 ) as the reaction source, hydrogen (H 2 ) to take out SiCl by bubbling 4 The carrier gas, argon (Ar) is the diluent gas, the deposition temperature is 1000-1200°C, the deposition pressure is 2-5kPa, and the deposition time is 50-100h.
[0074] Step 2. Weaving of silicon nitride fiber preform. The specific process is:
[0075] A...
Embodiment 2
[0088] Step 1. Graphite mold preparation. The specific process is:
[0089] Step 1.1 Design and prepare a graphite mold according to the size requirements of the silicon nitride radome and the requirements of a split or integrated structure.
[0090] Step 1.2 Place the graphite mold in a chemical vapor deposition furnace, and deposit a layer of silicon nitride coating with a thickness of 50-100 μm on the surface to prevent the carbon element from the surface of the mold from diffusing to the fiber preform, so as to ensure a good radome. Wave performance. The coating deposition process is as follows: silicon tetrachloride (SiCl 4 ), ammonia (NH 3 ) as the reaction source, hydrogen (H 2 ) to take out SiCl by bubbling 4 The carrier gas, argon (Ar) is the diluent gas, the deposition temperature is 1000-1200°C, the deposition pressure is 2-5kPa, and the deposition time is 50-100h.
[0091] Step 2. Weaving of silicon nitride fiber preform. The specific process is:
[0092] T...
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