Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

High-performance environment-friendly lead-based perovskite solar cell and preparation method thereof

An environmentally friendly, solar cell technology, applied in the field of solar cells, can solve the problems of lead leakage, human health hazards, etc., achieve the effects of passivating grain boundaries, reducing human harm, and optimizing crystallization performance

Active Publication Date: 2020-06-19
SUZHOU UNIV
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the lead element contained in lead-based perovskite can easily leak into the air in the form of ions, causing harm to human health.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-performance environment-friendly lead-based perovskite solar cell and preparation method thereof
  • High-performance environment-friendly lead-based perovskite solar cell and preparation method thereof
  • High-performance environment-friendly lead-based perovskite solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] (1) Provide a transparent conductive substrate of fluorine-doped tin oxide (FTO), and perform standardized cleaning;

[0028] (2) Dissolve 599 mg of lead iodide in 1 mL of a mixed solution of dimethyl sulfoxide and dimethylformamide (volume ratio 5:95), and simultaneously add 70 mg of FAI, 7 mg of MABr, and 7 mg of MACl and 1 mg of disodium edetate dissolved in 1 mL of isopropanol;

[0029] (3) Treat FTO with ozone for 30 min, then add tin oxide solution dropwise, rotate at 4000 rpm for 40 s, and then anneal at 180 °C for 30 min to obtain a cured electron transport layer;

[0030] (4) The lead-based perovskite film layer was prepared by a two-step method. The lead iodide solution was rotated at 1500 rpm for 30 s, and the annealing temperature was 70 °C for 1 min. Then add the isopropanol solution of the ammonium salt of disodium edetate, rotate at 1700 rpm for 30 s, and anneal in air at 150°C for 10 min to obtain a lead-based perovskite film layer;

[0031] (5) Hole t...

Embodiment 2

[0035] (1) Provide a transparent conductive substrate of fluorine-doped tin oxide (FTO), and perform standardized cleaning;

[0036] (2) Dissolve 599 mg of lead iodide in 1 mL of a mixed solution of dimethyl sulfoxide and dimethylformamide (volume ratio 5:95), and simultaneously add 70 mg of FAI, 7 mg of MABr, and 7 mg of MACl and 1 mg of 2,3-dimercaptosuccinic acid dissolved in 1 mL of isopropanol;

[0037] (3) Treat the FTO with ozone for 30 min, then add tin oxide solution dropwise, rotate at 4000 rpm for 40 s, and then anneal at 180 °C for 30 min to obtain a cured electron transport layer;

[0038] (4) The lead-based perovskite film layer was prepared by a two-step method. The lead iodide solution was rotated at 1500 rpm for 30 s, and the annealing temperature was 70 °C for 1 min. After that, the isopropanol solution of ammonium salt of 2,3-dimercaptosuccinic acid was added and rotated at 1700 rpm for 30 s, the annealing temperature in air was 150 °C, and the time was 10 ...

Embodiment 3

[0043] (1) Provide a transparent conductive substrate of fluorine-doped tin oxide (FTO), and perform standardized cleaning;

[0044](2) Dissolve 599 mg of lead iodide in 1 mL of a mixed solution of dimethyl sulfoxide and dimethylformamide (volume ratio 5:95), and simultaneously add 70 mg of FAI, 7 mg of MABr, 7 mg of MACl and 10 mg of disodium edetate dissolved in 1 mL of isopropanol;

[0045] (3) Treat the FTO with ozone for 30 min, then add tin oxide solution dropwise, rotate at 4000 rpm for 40 s, and then anneal at 180 °C for 30 min to obtain a cured electron transport layer;

[0046] (4) The lead-based perovskite film layer was prepared by a two-step method. The lead iodide solution was rotated at 1500 rpm for 30 s, and the annealing temperature was 70 °C for 1 min. Then add the isopropanol solution of disodium edetate ammonium salt and rotate at 1700 rpm for 30 s, anneal in air at 150°C for 10 min to obtain a lead-based perovskite film layer;

[0047] (5) Hole transport...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention belongs to the field of solar cells, and discloses a high-performance environment-friendly lead-based perovskite solar cell and a preparation method thereof. According to the preparationmethod, a certain amount of a chelating agent disodium ethylene diamine tetraacetate or 2, 3-dimercaptosuccinic acid is introduced into a lead-based perovskite precursor solution so that the crystallinity and the crystal orientation of a lead-based perovskite thin film layer can be effectively optimized, the grain boundary of a perovskite thin film is passivated, and the energy conversion efficiency of the perovskite thin film is improved. Meanwhile, when the device is decomposed, the chelating agent can be combined with lead ions in time to form a stable and soluble complex, the complex canbe smoothly metabolized by a human body and discharged along with urine after being absorbed by the human body accidentally, and finally harm to the human body is remarkably reduced. Commercial development of the perovskite solar cell is facilitated, and particularly application of perovskite indoor photovoltaic as energy supply of the smart home terminal in the Internet of Things era is promoted.

Description

technical field [0001] The invention belongs to the field of solar cells, in particular to a high-performance and environment-friendly lead-based perovskite solar cell and a preparation method thereof. Background technique [0002] Energy issues have always been a key research issue in the development of human society. The research and development of solar photovoltaic devices provides an effective solution to solve the energy shortage required for human development. Among them, perovskite solar thin-film solar cell devices have received extensive attention due to their low cost and outstanding photoelectric properties, and have been developed rapidly. After short-term development, its energy conversion efficiency can reach more than 20%. At present, high-performance perovskite solar cells are mainly based on lead-based perovskite film layers, but due to Pb 2+ The ions have a certain solubility in water and have a serious impact on water and soil. At the same time, Pb 2+ ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/46H01L51/48
CPCH10K71/00H10K85/00H10K30/10H10K30/80H10K2102/00Y02E10/549Y02B10/10Y02P70/50
Inventor 王照奎廖良生李萌
Owner SUZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com