Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Diamond thin film of multi-level micro-nano structure and preparation method and application thereof

A technology of diamond film and nano-diamond, which is applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the problems of time-consuming, complicated process, expensive RIE equipment, etc., and achieve long life, simple preparation process, good binding effect

Active Publication Date: 2020-06-26
SHENZHEN INST OF ADVANCED TECH
View PDF6 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these techniques for preparing superhydrophobic diamond generally require the use of reactive ion etching equipment (RIE) to prepare needle / column nanostructures, that is, first prepare a dense diamond film, and then use gold or other metals as a mask to pass through CF 4 , O 2 、H 2 Waiting for reactive gases to generate plasma, which has the disadvantages of long time-consuming, complicated process, and expensive RIE equipment

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Diamond thin film of multi-level micro-nano structure and preparation method and application thereof
  • Diamond thin film of multi-level micro-nano structure and preparation method and application thereof
  • Diamond thin film of multi-level micro-nano structure and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0046] According to a second aspect of the present invention, a method for preparing a diamond film is provided, comprising the following steps:

[0047] First, low-density crystal implantation is performed on the pretreated substrate, and diamond is grown once by chemical vapor deposition method; then high-density crystal implantation is performed on the primary diamond film growth, and diamond is grown secondary by chemical vapor deposition method, A diamond film is obtained.

[0048] Chemical vapor deposition methods include but are not limited to hot wire or microwave plasma enhanced chemical vapor deposition methods, preferably hot wire chemical vapor deposition methods.

[0049] The chemical vapor deposition diamond growth needs to implant diamond seeds, and then carry out epitaxial growth at the implanted seed crystal point, and use the selective adsorption of diamond crystal seeds on the substrate to construct a super-hydrophobic micro-nano structure. The present inve...

Embodiment 1

[0087] Embodiment 1 matrix silicon

[0088] A method for preparing a diamond film, comprising the steps of:

[0089] (1) Clean the surface of the substrate silicon, first use deionized water to ultrasonically clean it twice, each time for 5 minutes, and finally use alcohol to ultrasonically clean it for 5 minutes, and dry it with nitrogen;

[0090] (2) Carry out etching treatment to the substrate silicon that cleans up, put the sample into 10ml 32%H 2 o 2 +10ml NH 3· h 2 O+50ml H 2 O solution, 80 degrees Celsius for 10 minutes;

[0091] (3) Carry out recleaning to matrix silicon, ultrasonic 3 times with deionized water, each time 5 minutes, dry with nitrogen at last;

[0092] (4) Carry out low-density crystal planting on the substrate silicon, put the substrate silicon into the low-density crystal-planting solution and ultrasonicate for 30 minutes, take it out, and dry it with nitrogen; the low-density crystal-planting solution is detonation nano-diamond suspension, and ...

Embodiment 2

[0097] Embodiment 2 copper alloy matrix

[0098] A method for preparing a diamond film, comprising the steps of:

[0099] (1) Clean the surface of the copper alloy substrate, first use deionized water to ultrasonically clean for 2 times, each time for 5 minutes, finally use alcohol to ultrasonically clean for 5 minutes, and dry with nitrogen;

[0100] (2) Carry out corrosion treatment to the cleaned copper alloy substrate, first ultrasonic cleaning in alkaline solution for 5 minutes, then cleaning in acid solution for 30 seconds, wherein the alkaline solution is 1M NaOH, and the acid solution is 4M HCl;

[0101] (3) Clean the copper alloy substrate again, first use deionized water to ultrasonically clean for 2 times, each time for 5 minutes, finally use alcohol to ultrasonically clean for 5 minutes, and dry with nitrogen;

[0102] (4) Carry out low-density crystal planting to the copper alloy substrate, put the copper alloy substrate into the low-density crystal-plant solutio...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
sizeaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a diamond thin film of a multi-level micro-nano structure and a preparation method and application thereof and relates to the technical field of diamond thin films. The diamondthin film comprises a discontinued micron-sized diamond island which is formed from the surface of a substrate to the exterior in sequence and the multi-level micro-nano structure which is similar tothe mastoid process of the lotus leaf and is formed by a nano diamond film layer composed of continuous nano-sized diamond grains. The preparation method of the diamond thin film comprises the following steps that first, low-density crystal implantation is performed on the substrate, and primary growth of diamond is performed through a heat wire chemical vapor deposition method; and then, high-density crystal implantation is performed on the primary growth diamond thin film, and secondary growth of diamond is performed through the heat wire chemical vapor deposition method. The diamond thin film is of the multi-level micro-nano structure similar to the mastoid process of the lotus leaf, forms a bionic super-hydrophobic surface, and is high in hydrophobicity and self-cleaning capacity, resistant to corrosion and long in service life. The preparation method is easy to implement, high in applicability and suitable for industrial production and has a simple and stable process.

Description

technical field [0001] The invention relates to the technical field of diamond thin films, in particular to a diamond thin film with a multi-level micro-nano structure and its preparation method and application. Background technique [0002] Recently, the wettability of the diamond film surface has attracted much attention, because the wettability directly affects its application in the fields of chemistry, biology, medicine, etc., especially in the use of macroscopic or microscopic devices, hydrophilic or superhydrophobic materials are urgently needed. diamond film. For example, some biosensors require a hydrophilic surface to promote the adsorption of cells on the probe; on the contrary, the surface of the device working in harsh environments such as seawater, blood, mechanical impact and wear needs to be protected, with a superhydrophobic surface to prevent chemical corrosion, Anti-biofouling and anti-mechanical wear, such as anti-thrombosis artificial stents, artificial...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/27C23C16/44
CPCC23C16/271C23C16/44
Inventor 唐永炳王陶李星星黄磊
Owner SHENZHEN INST OF ADVANCED TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com