Quantum dot modified titanium dioxide-based photo-anode, solar cell and preparation method

A technology of titanium dioxide and quantum dots, which is applied in the field of solar cells and its preparation, quantum dots modifying titanium dioxide-based photoanodes, and can solve problems such as quantum dots are easy to dissolve, fall off the electrolyte, and the service life of photoanodes is limited.

Active Publication Date: 2020-06-30
SUN YAT SEN UNIV
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Problems solved by technology

However, in the traditional quantum dot-modified titanium dioxide photoanode, the utilization rate of the photogenerated electron-hole pairs generated in the quantum dots by the titanium dioxide semiconductor is still not high, resulting in low photo

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  • Quantum dot modified titanium dioxide-based photo-anode, solar cell and preparation method
  • Quantum dot modified titanium dioxide-based photo-anode, solar cell and preparation method
  • Quantum dot modified titanium dioxide-based photo-anode, solar cell and preparation method

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preparation example Construction

[0045] The present invention also provides a preparation method for obtaining the quantum dot-modified titanium dioxide-based photoanode in the above embodiments, and the preparation method includes the following steps.

[0046] Step S1, forming a metal layer on a conductive glass substrate, forming a first titanium dioxide layer on the metal layer, and performing a first annealing treatment to obtain a first titanium dioxide substrate.

[0047] As a specific example, the conductive glass may be FTO conductive glass.

[0048] The method of forming the metal layer may be magnetron sputtering, and the thickness of the metal layer may be 20nm-200nm, for example, the thickness of the metal layer is 100nm.

[0049] As a specific example, gold is selected as the material of the metal layer, the deposition current of the magnetron sputtering process can be controlled to be 35mA, and the deposition time is 225s, so that the deposition of a gold layer with a thickness of about 100nm ca...

Embodiment 1

[0070] 1) Deposit a layer of gold film on the FTO conductive glass with a specification of 15mm*15mm by magnetron sputtering; the deposition current is 35mA, the deposition time is 225s, and the thickness of the obtained gold film is about 100nm.

[0071] 2) Deposit a layer of titanium dioxide film on the above gold film by atomic layer deposition technology, the titanium source is tetraisopropyl titanate, the oxygen source is deionized water, the deposition temperature is 200°C, and the thickness of the obtained titanium dioxide film is about 20nm; then Perform annealing treatment, the annealing temperature is 450°C, and the annealing time is 3h, to obtain the first titanium dioxide substrate.

[0072] 3) Soak the obtained first titanium dioxide substrate in an aqueous solution of mercaptopropionic acid with a concentration of 10 mol / L, take it out after 24 hours; then immerse it in CdS x Se 1-x In the aqueous dispersion of quantum dots, take it out after 24 hours, rinse it ...

Embodiment 2

[0076] 1) Deposit a layer of gold film by magnetron sputtering on the FTO conductive glass with a specification of 15mm*15mm; the deposition current is 35mA, the deposition time is 300s, and the thickness of the obtained gold film is about 150nm.

[0077] 2) Deposit a layer of titanium dioxide film on the above gold film by atomic layer deposition technology, the titanium source is tetraisopropyl titanate, the oxygen source is deionized water, the deposition temperature is 200°C, and the thickness of the obtained titanium dioxide film is about 40nm; Perform annealing treatment, the annealing temperature is 500° C., and the annealing time is 2.5 hours, to obtain the first titanium dioxide substrate.

[0078] 3) Soak the obtained first titanium dioxide substrate in an aqueous solution of mercaptopropionic acid with a concentration of 20mol / L, take it out after 15 hours; then immerse it in CdS x Se 1-x In the aqueous dispersion of quantum dots, take it out after 12 hours, rinse ...

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Abstract

The invention relates to a quantum dot modified titanium dioxide-based photo-anode. The photo-anode comprises a substrate, and a metal layer, a first titanium dioxide layer, an organic compound layer,a quantum dot layer and a second titanium dioxide layer which are sequentially arranged on the substrate. The first titanium dioxide layer and the quantum dot layer are stably combined together through the effect of the organic compound layer containing carboxyl and sulfydryl, the coverage rate of quantum dots is increased, and the photoresponse performance of the photoanode is improved. On the basis, a second titanium dioxide layer is introduced to form a sandwich energy band structure, so that the light absorption rate is improved, the utilization efficiency of photon-generated carriers inthe quantum dots is improved, and the light response performance of the photo-anode is further improved.

Description

technical field [0001] The invention relates to the field of photoelectric materials, in particular to a quantum dot modified titanium dioxide-based photoanode, a solar cell and a preparation method. Background technique [0002] Titanium dioxide has the advantages of abundant raw materials, simple preparation process, and stable chemical properties. It is widely used in solar photoelectric conversion, photocatalytic water splitting and other fields. However, titanium dioxide is a wide-bandgap semiconductor with an optical bandgap as high as 3.20eV, which means that it can only be excited by light in the ultraviolet band, which contains about 5% of sunlight, to generate photoelectrons, which severely limits its application in solar photoelectric conversion and photoelectric conversion. Applications in catalytic water splitting and other fields. The titanium dioxide-metal bilayer film can realize the photoresponse of titanium dioxide in the visible light range, and on this b...

Claims

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Application Information

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IPC IPC(8): H01G9/20H01G9/00B82Y30/00
CPCB82Y30/00H01G9/0029H01G9/20H01G9/2027H01G9/2031H01G9/2054Y02E10/542
Inventor 金崇君程韦豪
Owner SUN YAT SEN UNIV
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