Quantum dot light-emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve the problem of low electron transmission efficiency in the electron transport layer

Active Publication Date: 2020-07-07
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to overcome the above-mentioned shortcomings of the prior art, provide a quantum dot light-emitting diode and its preparation method, aiming at solving the technical problem of low electron transport efficiency of the electron transport layer of the existing device

Method used

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  • Quantum dot light-emitting diode and preparation method thereof
  • Quantum dot light-emitting diode and preparation method thereof

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preparation example Construction

[0024] On the other hand, the embodiment of the present invention also provides a method for preparing a quantum dot light-emitting diode, such as figure 2 shown, including the following steps:

[0025] S01: Provide a base;

[0026] S02: dissolving graphyne fluoride in a solvent to obtain a graphyne fluoride solution;

[0027] S03: Depositing the graphyne fluoride solution on a substrate to obtain an electron transport layer.

[0028] The preparation method of the quantum dot light-emitting diode provided by the embodiment of the present invention uses the solution method to make the fluorinated graphyne into the electron transport layer, which not only has a simple process and low cost, but also improves the electron transport efficiency and can be matched with the quantum dot light-emitting layer The high density finally improves the light-emitting performance of the device.

[0029] Further, in the above step S01: if the surface of the substrate is a cathode (cathode su...

Embodiment 1

[0042] To use graphyne nanospheres, 1% fluorine F 2 (99% argon) etc. as an example for detailed introduction:

[0043] 1) Spread 500mg of graphdiyne powder on a watch glass, put it into a muffle furnace and continuously feed argon;

[0044] 2) After raising the temperature of the muffle furnace to 70 degrees Celsius, switch the argon gas to 1% fluorine gas (99% argon gas), cut off the fluorine gas source after 30 minutes, and cool down to room temperature after 30 minutes of heat preservation;

[0045] 3) Disperse the fluorinated graphyne in a solvent to prepare the QLED electron transport layer, and then form a QLED device with other functional layers.

Embodiment 2

[0047] To use graphyne nanospheres, 1% SF 6 (99% argon) etc. as an example for detailed introduction:

[0048] 1) Spread 500mg of graphdiyne powder on a watch glass, put it into a muffle furnace and continuously feed argon;

[0049] 2) After raising the temperature of the muffle furnace to 200 degrees Celsius, switch the argon gas to 1% SF 6 (99% argon), cut off SF after 30 minutes 6 Air source, keep warm for 30 minutes and then drop to room temperature;

[0050] 3) Disperse the fluorinated graphyne in a solvent to prepare the QLED electron transport layer, and then form a QLED device with other functional layers.

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Abstract

The invention belongs to the technical field of display, and particularly relates to a quantum dot light emitting diode and a preparation method thereof. The quantum dot light-emitting diode comprisesan anode, a cathode and a quantum dot light-emitting layer located between the anode and the cathode, wherein an electron transport layer is further arranged between the cathode and the quantum dot light-emitting layer, and the electron transport layer is made of graphdiyne fluoride. The graphdiyne fluoride is applied to the electron transport layer of the quantum dot light-emitting diode device,thereby not only having the advantage of high electron transport efficiency, but also having high matching degree with the quantum dot light-emitting layer, and finally improving the light-emitting performance of the device.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diode (QLED) is expected to become a new generation of excellent display technology due to its advantages such as high luminous efficiency, high color purity, narrow luminous spectrum, and adjustable emission wavelength, and the technical level in all aspects is also constantly improving. Among them, optimizing the device structure is a general direction to improve the performance of QLEDs. How to improve the luminous efficiency of the light-emitting layer by optimizing the charge transport layer is the most important link. [0003] Graphyne is a kind of natural direct band gap, which has the conductivity comparable to that of graphene materials, and has a larger intrinsic hole mobility than graphene at room temperature (up to 4.29×10 5 cm 2...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K50/115H10K50/16H10K71/00
Inventor 吴劲衡吴龙佳何斯纳
Owner TCL CORPORATION
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