Method for preparing simple substance palladium thin film through atomic layer deposition technology

An atomic layer deposition, elemental palladium technology, applied in coating, metal material coating process, gaseous chemical plating, etc., can solve the problems of reducing deposition temperature, inconvenient process for hydrogen storage and use safety, poor coating effect, etc. , to achieve the effect of simplifying the preparation process, easy operation and cost saving

Pending Publication Date: 2020-07-14
江苏迈纳德微纳技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, in ALD chemistry, H atoms react with hfac ligands to generate Hhfac reaction products. The high reactivity of plasma hydrogen can greatly reduce the deposition temperature, but at the same time, due to its high activity, when they have no

Method used

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  • Method for preparing simple substance palladium thin film through atomic layer deposition technology
  • Method for preparing simple substance palladium thin film through atomic layer deposition technology
  • Method for preparing simple substance palladium thin film through atomic layer deposition technology

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Embodiment 1

[0032] A kind of with palladium hexafluoroacetylacetonate Pd (hfac) 2 as palladium precursor, the method for preparing elemental palladium thin film with propylhydrazine as the atomic layer deposition technology of hydrazines reducing precursor, comprises the following steps:

[0033] S1. Heat the atomic layer deposition equipment to a temperature of 200°C, and the ultimate pressure after vacuuming is 0.1-10Pa;

[0034] S2. The average heating temperature of the atomic layer deposition system is 200°C, the pressure value is 10-200Pa, the heating time is 40min, and the flow rate range of the carrier gas is 10-200sccm;

[0035] S3. Open the palladium hexafluoroacetylacetonate atomic layer deposition pulse valve, and the opening time range of the pulse valve is 50-2000ms, so that the palladium hexafluoroacetylacetonate enters the equipment reaction chamber, adsorbs and reacts with the substrate surface;

[0036] S4. Use an inert gas as the carrier gas to clean the incompletely re...

Embodiment 2

[0042] A kind of with palladium hexafluoroacetylacetonate Pd (hfac) 2 as palladium precursor, the method for preparing elemental palladium thin film with t-butylhydrazine as the atomic layer deposition technique of hydrazines reducing precursor, comprises the following steps:

[0043] S1. Heat the atomic layer deposition equipment to a temperature range of 300°C, and the ultimate pressure after vacuuming is 0.1-10Pa;

[0044] S2. The average heating temperature range of the atomic layer deposition system is 300°C, the pressure range is 10-200Pa, the heating time is 40min, and the flow rate range of the carrier gas is 10-200sccm;

[0045] S3. Open the palladium hexafluoroacetylacetonate atomic layer deposition pulse valve, and the opening time range of the pulse valve is 50-2000ms, so that the palladium hexafluoroacetylacetonate enters the equipment reaction chamber, adsorbs and reacts with the substrate surface;

[0046] S4. Use an inert gas as the carrier gas to clean the inc...

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Abstract

The invention relates to the technical field of methods for manufacturing a simple substance palladium thin film, and discloses a method for preparing the simple substance palladium thin film throughan atomic layer deposition technology. The method involves a palladium precursor and a hydrazine reductive precursor, wherein the palladium precursor can adopt palladium hexafluoroacetylacetonate Pd(hfac)2, the hydrazine reductive precursor can adopt C1-C5 hydrocarbon chain reductive precursors such as anhydrous hydrazine, methylhydrazine, ethylhydrazine, propyl hydrazine and tert-butyl hydrazine,and the structural formula of a hydrazine reductive agent is R1R2N-NR3R4, wherein R1, R2, R3 and R4 comprise hydrogen atoms and C1-C5 hydrocarbon chains, and R1, R2, R3 and R4 can be the same or different. The method has the advantages that the hydrazine reductive agent is selected as the reductive precursor, and the simple substance palladium thin film can be deposited by directly utilizing a thermal atomic layer deposition technology; and the thermal atomic layer deposition technology is superior to gases such as plasma hydrogen, oxygen and ozone adopted in the prior art, the more convenience, the more safety and the easier operation are achieved, the inconvenience in operation of plasma hydrogen, plasma ammonia gas and the like can be avoided, the preparation process of the simple substance palladium thin film can be simplified, and the cost is saved.

Description

technical field [0001] The invention relates to the technical field of production methods of elemental palladium thin films, in particular to a method for preparing elemental palladium thin films by atomic layer deposition technology. Background technique [0002] In recent years, noble metals and transition metals have been favored due to their unique and outstanding physical and chemical properties, such as high melting point, high chemical stability, high strength, good ductility, oxidation resistance, corrosion resistance, high catalytic activity, and good Conductivity, and widely used in various fields of high-tech and military technology such as microelectronics, optics, electrode materials, fuel cells, gas sensors and aerospace. Palladium thin films have a wide range of nanoscale applications. For example, they can be used as metal contacts in nanoelectronics or as energy storage materials. The catalytic performance of nanoscale Pd is also of great interest, for exa...

Claims

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Application Information

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IPC IPC(8): C23C16/455C23C16/18
CPCC23C16/45527C23C16/18
Inventor 不公告发明人
Owner 江苏迈纳德微纳技术有限公司
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