Two-dimensional layered perovskite ferroelectric multifunctional film and preparation process thereof

A two-dimensional layered, perovskite technology, applied in the manufacturing of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of difficult regulation of polarization direction, difficult research and development of reliable processes, and difficult to promote, etc. control, low cost, and excellent ferroelectric properties

Active Publication Date: 2020-07-14
UNIV OF SCI & TECH BEIJING
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the preparation of this type of two-dimensional perovskite ferroelectric materials requires advanced physical preparation methods, and the process is complicated, which is not easy to promote in industry
[0004] To sum up, from the confirmation of two-dimensional ferroelectricity to the difficulty of adjusting the polarization direction, and then to the difficulty in the development of reliable processes, these are the bottlenecks for the application of two-dimensional ferroelectric materials.

Method used

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  • Two-dimensional layered perovskite ferroelectric multifunctional film and preparation process thereof
  • Two-dimensional layered perovskite ferroelectric multifunctional film and preparation process thereof
  • Two-dimensional layered perovskite ferroelectric multifunctional film and preparation process thereof

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Embodiment 1

[0075] Bismuth nitrate pentahydrate (Bi(NO 3 ) 3 ·5H 2 (0) was added 7 mL of ethylene glycol methyl ether (EGME). Then add cobalt nitrate hexahydrate (Co(NO 3 ) 3 ·6H 2 O) or nickel nitrate hexahydrate (Ni(NO 3 ) 3 ·6H 2 O). The preparation chemical formula is: Bi 2 o x -BiCoO 3 and Bi 2 o x -BiNiO 3 That is, 10 mL of a precursor solution with a molar ratio of Bi and Me of 3:1 and a molar concentration of 0.25 M. Spin-coat thin films on single crystal substrates. Preheat the substrate on a heating plate at 90°C for 2 minutes, quickly transfer it to a spin coater, use a pipette gun to absorb an appropriate amount of precursor solution and add it drop by drop on the substrate to fully cover the surface of the substrate, and spin coat at a speed of 5000rpm for 30s; Move the substrate to a 90°C heating plate to dry for 10 minutes; rapidly heat to 270°C and bake for 4 minutes; finally move it into an annealing furnace to rapidly raise the temperature, and anneal at ...

Embodiment 2

[0078] Bismuth nitrate pentahydrate (Bi(NO 3 ) 3 ·5H 2 (0) was added 7 mL of ethylene glycol methyl ether (EGME). Then add cobalt nitrate hexahydrate (Co(NO 3 ) 3 ·6H 2 O) the preparation chemical formula is: Bi 2 o x -BiCoO 3 , 10 mL of a precursor solution with a molar concentration of 0.4 M. Spin-coat thin films on single crystal substrates. Preheat the substrate on a 90°C heating plate for 2 minutes, quickly transfer it to a spin coater, use a pipette gun to absorb an appropriate amount of precursor solution and add it drop by drop on the substrate to fully cover the surface of the substrate, and spin coat at 4000rpm for 30s; Move the substrate to a heating plate at 90°C to dry for 10 minutes; quickly heat to 270°C and bake for 4 minutes; finally divide the prepared substrates into three groups and anneal at 500°C, 560°C, and 600°C for 30 minutes respectively; ferroelectric multifunctional thin films.

[0079] The prepared thin film is subjected to XRD analysi...

Embodiment 3

[0081] Bismuth nitrate pentahydrate (Bi(NO 3 ) 3 ·5H 2 (0) was added 7 mL of ethylene glycol methyl ether (EGME). Then add cobalt nitrate hexahydrate (Co(NO 3 ) 3 ·6H 2 O) the preparation chemical formula is: Bi 2 o x -BiCoO 3, 10 mL of a precursor solution with a molar concentration of 0.25 M. Spin-coat thin films on single crystal substrates. Preheat the substrate on a heating plate at 90°C for 2 minutes, quickly transfer it to a spin coater, use a pipette gun to absorb an appropriate amount of precursor solution and add it drop by drop on the substrate to fully cover the surface of the substrate, and spin coat at a speed of 5000rpm for 30s; Move the substrate to a heating plate at 90°C to dry for 10 minutes; quickly heat to 270°C and bake for 4 minutes; finally divide the prepared substrates into three groups, and anneal at 500°C for 20 minutes; obtain ferroelectric multifunctional film. The ferroelectric properties of the film were analyzed.

[0082] as attache...

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Abstract

The invention belongs to the field of condensed state physics, functional films and nanotechnology, and relates to a two-dimensional layered perovskite ferroelectric multifunctional film and a preparation process thereof. The molecular formula of the two-dimensional layered perovskite ferroelectric multifunctional film is yBi2Ox-BiMeO3, 2<=x<=4, 1<=y<=4, and Me is a transition metal. The perovskite-like structure Bi2Ox and the perovskite-like structure BiMeO3 have similar crystal structures and matched lattice constants, and have a stable tetragonal phase-like supercell structure. The preparation process comprises the following steps: firstly, preparing a precursor solution of which the ratio of Bi to Me is 1-6 and the molar concentration is 0.1-0.4 M; and carrying out spin coating, drying, pyrolysis and annealing to obtain the two-dimensional layered perovskite ferroelectric multifunctional film. According to the invention, a crystal structure design and a sol-gel synthesis method areadopted to develop a film with a new structure, the components of the precursor solution are accurate and controllable, the synthesis conditions are simple, and finally the high-quality ferroelectricfilm with excellent performance is obtained.

Description

technical field [0001] The invention belongs to the fields of condensed matter physics, functional thin films and nanotechnology, and specifically relates to a two-dimensional layered perovskite ferroelectric multifunctional thin film and a preparation process thereof. Background technique [0002] Whether ferroelectric materials can maintain their ferroelectricity in low dimensions has always been a scientific issue that has attracted much attention. The phenomenological theory in the 1980s believed that the polarization properties of ferroelectric materials gradually changed from three-dimensional to two-dimensional as the size decreased, and their polarization ability gradually decreased or even disappeared in the direction of size reduction. This is the so-called "size effect". The appearance of the size effect is due to the induced charge on the surface of the material, which generates a depolarization field and weakens the polarization characteristics of the material....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/032H01L21/02
CPCH01L21/02521H01L31/032
Inventor 张林兴丁佳麒杨倩倩田建军
Owner UNIV OF SCI & TECH BEIJING
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