Boron-doped diamond electrode with high conductivity, long service life and high specific surface area and preparation method and application thereof

A high specific surface area, diamond electrode technology, applied in the direction of electrodes, chemical instruments and methods, electrolysis process, etc., can solve the problems of small specific surface area, low electrode efficiency, electrode failure, etc.

Active Publication Date: 2020-08-11
NANJING DAIMONTE TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, studies have shown that traditional boron-doped diamond thin film electrodes are mostly deposited on two-dimensional planar substrates, and their specific surface area is small, which is not conducive to the mass transfer of solutions and the generation of strong oxidizing active groups. There will be some corrosion during electrochemical degradation, which wi

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  • Boron-doped diamond electrode with high conductivity, long service life and high specific surface area and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] Embodiment 1: planar type (Al 2 o 3 -Fe composite material)

[0059] (1) Flat Al 2 o 3 -Pretreatment of Fe substrate: use acetone and absolute ethanol to ultrasonically clean for 10 minutes to remove surface oil and impurities, immerse in dilute hydrochloric acid with a mass fraction of 50% and etch for 10 minutes to obtain a stepped surface of the substrate, and then use anhydrous Ultrasonic cleaning with ethanol for 15 minutes to remove residual acid on the surface;

[0060] (2) Due to the thermal expansion adaptation problem between the substrate surface and the boron-doped diamond layer, in order to facilitate the deposition of boron-doped diamond, a layer of transition layer metal was sputtered on the pretreated substrate surface by magnetron sputtering Titanium Ti layer, adjust the sputtering power to 80W, the deposition time is 30min, and the thickness of the Ti layer is about 10μm;

[0061] (3) the processed Al 2 o 3 - The Fe / Ti substrate is placed in a s...

Embodiment 2

[0065] Embodiment 2: planar porous (TiC-Cr composite material)

[0066] (1) Pretreatment of porous TiC-Cr substrate: use acetone and absolute ethanol to ultrasonically clean for 10 minutes to remove surface oil and impurities, and immerse in dilute hydrochloric acid with a mass fraction of 15% for 20 minutes to obtain micro-etched pits on the surface of the substrate. Ultrasonic cleaning with absolute ethanol for 15 minutes to remove residual acid on the surface;

[0067] (2) Since there is no thermal expansion adaptation problem between the ceramic phase contained in the substrate and boron-doped diamond, and Cr is a good substrate for depositing boron-doped diamond, there is no need to deposit a transition layer on its surface. Place the TiC-Cr substrate in a suspension of nanocrystalline and microcrystalline diamond mixed particles, vibrate in ultrasonic waves for 30 minutes, disperse evenly, and obtain microcrystalline and nanocrystalline diamond particles adsorbed on the ...

Embodiment 3

[0071] Embodiment 3: three-dimensional porous (Al 2 o 3 -Ni composite)

[0072] (1) Substrate pretreatment: Use acetone and absolute ethanol to ultrasonically clean for 10 minutes to remove surface oil and impurities, then immerse in dilute hydrochloric acid with a mass fraction of 15% for 20 minutes to obtain micro-etched pits on the surface of the substrate, and then use anhydrous Ultrasonic cleaning with ethanol for 15 minutes to remove residual acid on the surface;

[0073] (2) Due to the thermal expansion adaptation problem between the substrate surface and the boron-doped diamond layer, in order to facilitate the deposition of boron-doped diamond, a layer of transition layer metal was sputtered on the pretreated substrate surface by magnetron sputtering Titanium Ti layer, adjust the sputtering power to 80W, the deposition time is 30min, and the thickness of the Ti layer is about 10μm;

[0074] (3) Deposit boron-doped diamond film by hot wire CVD, keep the distance bet...

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Abstract

The invention discloses a boron-doped diamond electrode with high conductivity, a long service life and a high specific surface area. The boron-doped diamond electrode is prepared by taking an etchedsubstrate as an electrode matrix; or arranging a transitional layer on the surface of the etched substrate as the electrode matrix and then arranging a boron-doped diamond layer on the surface of theelectrode matrix, wherein the boron-doped diamond layer comprises a boron-doped diamond bottom layer, a boron-doped diamond middle layer and a boron-doped diamond top layer with different boron contents; the boron-doped diamond bottom layer in contact with the matrix is taken as a conducting layer, the boron-doped diamond middle layer is taken as an anti-corrosive layer, the boron-doped diamond top layer is taken as a strong electro-catalytically active layer, the substrate is a composite material composed of a metal phase and a ceramic phase, and the metal phase is distributed continuously inthe composite material. The boron-doped diamond electrode has high conductivity, low residual stress, long service life and high specific surface area, and the degradation efficiency is improved greatly when being applied to degrading wastewater.

Description

technical field [0001] The invention relates to a boron-doped diamond electrode with high conductivity, long service life and high specific surface area, a preparation method and application thereof, and belongs to the field of electrode preparation. Background technique [0002] Boron-doped diamond film electrode (BDD) has high mechanical strength, chemical inertness and excellent electrochemical performance, such as a wide potential window in aqueous solution, high oxygen evolution overpotential and low background current, Hydroxyl radicals can be generated efficiently at the same current density, so that organic matter can be quickly removed, the surface has anti-poisoning and anti-pollution capabilities, and can work stably for a long time in strong corrosive media. Even under high electrochemical load, the passing current density is 2~10A cm 2 After thousands of hours of electrochemical reaction, there is no obvious sign of corrosion. The diamond film has high quality...

Claims

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Application Information

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IPC IPC(8): C23C16/27C23C16/02C23C16/56C25B11/04G01N27/327C02F1/461C02F101/30
CPCC23C16/278C23C16/56C23C16/02C23C16/0227C02F1/46109G01N27/327C02F2001/46142C02F2101/30C25B11/051C25B11/091
Inventor 魏秋平马莉周科朝王立峰王宝峰施海平
Owner NANJING DAIMONTE TECH CO LTD
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