Positive photoresist composition and method of forming photoresist pattern

Abstract

The invention discloses a positive photoresist composition and a method of forming a photoresist pattern. The positive photoresist composition comprises the following components: a component (1) whichis a resin containing a plurality of repetitive units, wherein the repetitive units of the resin contain phenolic hydroxyl groups; a component (2) which is a photoacid generator; and a component (3)which is a thermal cross-linking agent containing a vinyl ether group, wherein the component (1) and the component (3) are cured through a weak bridging reaction in the pre-baking process. Compared with hydroxyl resin without benzene rings, the film-forming curing effect of the component (1) and the component (3) is better, weak chemical bonding between the thermal crosslinking agent and the resinis then cut off by photoacid generated by the photoacid generator, and a deprotection effect is achieved, so that the alkali solubility of the resin in an exposure area is increased, the resin can bewashed away by an alkaline developing solution, and the purpose of positive imaging of the photoresist after exposure is achieved.

Description

technical field [0001] The invention relates to the technical field of photolithography, in particular to a positive photoresist composition and a method for forming a photoresist pattern. Background technique [0002] In the fields of lighting LED manufacturing, liquid crystal LCD panel manufacturing, OLED panel manufacturing, MicroLED panel manufacturing, MEMS chip semiconductor manufacturing, integrated circuit chip manufacturing and chip packaging technology, the use of photoresist to form fine patterns through photolithography is the process for the above products One of the key processes of manufacturing. The process steps include: coating photoresist, pre-baking, exposure, development and post-baking. The principle is to uniformly coat photoresist on the surface of the substrate to form a film, and remove the solvent after pre-baking. When irradiated, the characteristics of the photoresist material will change, and then developed by the developer, the exposed negativ...

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Problems solved by technology

[0003] The Chinese patent with the notification number CN1497347C discloses a positive-type photoresist composition for LCD manufacture and a method for forming a resist pattern. Acid agent, the price of the photoacid generator with this structure is relatively high, which is not conducive to reducing the cost of photolithography process

[0004] European patent publication number EP0609684B1 discloses a positive photosensitive material, which includes component (a), component (b) and component (c), wherein component (a) includes at least two A vinyl ether group, component (b) is chain resin, and chain resin can comprise hydroxyl group, promptly can be hydroxyl resin, but this hydroxyl resin does not contain benzene ring, and the cross-linking of component (a) The film-forming effect is poor, and component (c) is a substance that can generate acid by radiation

[0005] At present, the mainstream optical amplification photoresist generally uses acrylic resin or hydroxystyrene as the backbone, and the production cost is high and the price is expensive. Therefore, it is of great significance to study how to obtain a photoresist with low cost and good performance.

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