Preparation method of stable and high-efficiency silicon heterojunction solar cell

A silicon heterojunction, solar cell technology, applied in circuits, electrical components, photovoltaic power generation and other directions, can solve the problems of solar cell photoelectric conversion performance decline, production capacity decline, cost rise, etc., to improve internal stress, reduce consumption, The effect of prolonging time

Active Publication Date: 2020-08-28
ZHONGWEI NEW ENERGY CHENGDU CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In view of the accumulation of film on the surface of the deposition chamber during the continuous production process, due to the increase in internal stress, it is easy to peel off and cause powder drop, resulting in a decrease in the photoelectric conversion performance of the solar cell. The frequent use of online chemical cleaning in the traditional method will cause problems such as increased cost and decreased production capacity. The invention provides an amorphous silicon film deposition method for treating the inner surface of a chamber. The inner surface of the chamber is treated with one or more layers of intrinsic amorphous silicon, which can quickly restore the deposition environment of the chamber and improve the durability of solar cell products. Photoelectric performance during production

Method used

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  • Preparation method of stable and high-efficiency silicon heterojunction solar cell
  • Preparation method of stable and high-efficiency silicon heterojunction solar cell
  • Preparation method of stable and high-efficiency silicon heterojunction solar cell

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Embodiment 1

[0035] A method for preparing a stable high-efficiency silicon heterojunction solar cell, comprising the following steps:

[0036] S1. Texture making and cleaning: Use KOH, NaOH and other alkaline solutions to anisotropically corrode monocrystalline silicon to make texturing of n-type single crystal, and use RCA1 and RCA2 solutions to clean silicon wafers to obtain a crystalline silicon substrate with a clean surface 101;

[0037] S2. Depositing an amorphous silicon thin film passivation layer: sequentially depositing a 5 nm intrinsic amorphous silicon thin film 102 and a 10 nm doped silicon-based thin film passivation layer 103 on the first light-receiving surface on the first surface of the crystalline silicon substrate 101, The doped silicon-based thin-film passivation layer 103 on the first light-receiving surface is an n-type doped amorphous silicon stacked thin film; the intrinsic silicon-based thin-film passivation layers 104 and 15 are successively 5 nm on the second s...

Embodiment 2

[0046] A method for preparing a stable high-efficiency silicon heterojunction solar cell, comprising the following steps:

[0047] S1. Texture making and cleaning: Use KOH, NaOH and other alkali solutions to anisotropically corrode single crystal silicon to make texture on n-type single crystal, and use RCA1 and RCA2 solutions or other oxidation methods to clean the surface of the silicon wafer to obtain a surface Cleaned crystalline silicon substrate 101;

[0048] S2. Depositing an amorphous silicon thin film passivation layer: in the same vacuum chamber, on the first surface of the crystalline silicon substrate 101, sequentially deposit a 5 nm intrinsic amorphous silicon thin film 102 and a 6 nm doping of the first light-receiving surface Silicon-based thin-film passivation layer 103, the doped silicon-based thin-film passivation layer 103 on the first light-receiving surface is an n-type doped amorphous silicon stacked thin film; in the same vacuum chamber, sprinkle flowers...

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Abstract

The invention discloses a preparation method of a stable and high-efficiency silicon heterojunction solar cell. The preparation method comprises the steps of depositing an intrinsic amorphous siliconthin film on the surface of an accumulation thin film, wherein the accumulation thin film comprises an accumulation thin film in a deposition chamber, the intrinsic amorphous silicon thin film deposited in the deposition chamber is an amorphous silicon thin film with high hydrogen content and high disorder degree, and the high hydrogen content refers to that the percentage content of hydrogen is 10%-25% relative to the number of silicon atoms of 5.22*10<22> by calculating the number of hydrogen atoms in unit volume; and the high disorder degree means that the microstructure factor R is 15-80%.The amorphous silicon thin film is deposited in the deposition chamber and on the surface of the tray, so that the internal stress of the accumulation thin film can be effectively reduced, the falling of the accumulation thin film in the deposition chamber is avoided, the stable output of the high-efficiency low-cost silicon heterojunction solar cell is facilitated, the accumulation thin film isquickly processed, and the stable high-efficiency silicon heterojunction solar cell is obtained.

Description

technical field [0001] The invention belongs to the field of semiconductor photoelectric conversion, and in particular relates to a preparation method of a stable and high-efficiency silicon heterojunction solar cell. Background technique [0002] Silicon heterojunction SHJ solar cell is a high-efficiency crystalline silicon solar cell, which has attracted widespread attention in the photovoltaic industry because of its high conversion efficiency and low temperature coefficient. SHJ battery is a double-sided battery with a high bifacial rate. Because the back side contributes a lot to the power generation, its power generation output is more than 10% higher than that of ordinary crystalline silicon solar cells under the same conditions, so it has higher cost performance. . SHJ cells use n-type monocrystalline silicon wafers as substrates, and the basic manufacturing process includes texture cleaning, amorphous silicon film deposition, transparent conductive oxide film depos...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L31/072H01L31/074
CPCH01L31/1804H01L31/072H01L31/074Y02E10/547Y02P70/50
Inventor 张丽平刘正新蓝仕虎孟凡英
Owner ZHONGWEI NEW ENERGY CHENGDU CO LTD
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