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Method for rapidly growing metal single atoms on carbon-based carrier by using microwave to induce metal to discharge and application of metal monatomic carbon-based material prepared by method

A technology for inducing metal and carbon-based supports, applied in metal/metal oxide/metal hydroxide catalysts, chemical instruments and methods, metal material coating technology, etc., can solve high preparation costs, long sputtering time, equipment Requires high-level problems to achieve the effects of improved deposition efficiency, easier capture, and increased loading capacity

Active Publication Date: 2020-09-01
WUHAN TEXTILE UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this technology requires high equipment, and the sputtering time is relatively long, and the preparation cost is high.

Method used

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  • Method for rapidly growing metal single atoms on carbon-based carrier by using microwave to induce metal to discharge and application of metal monatomic carbon-based material prepared by method
  • Method for rapidly growing metal single atoms on carbon-based carrier by using microwave to induce metal to discharge and application of metal monatomic carbon-based material prepared by method
  • Method for rapidly growing metal single atoms on carbon-based carrier by using microwave to induce metal to discharge and application of metal monatomic carbon-based material prepared by method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] A method for rapidly growing tungsten metal single atoms on a carbon-based carrier by microwave-induced metal discharge, comprising the following steps:

[0039] S1. Add 200mg of conductive carbon fiber to 30mL of ethanol solvent, and use an ultrasonic cell pulverizer with a power of 600W to mix evenly for 60s to obtain a carrier solution; after the ethanol volatilizes until the solution becomes viscous (the concentration of conductive carbon fiber is about 20mg / mL) , use a brush to coat the viscous carrier solution on the wall of a 200mL quartz beaker, the thickness of the carrier coating is about 0.2cm;

[0040] Then polish the tungsten metal wire with a length of 5 cm and a diameter of 0.2 cm with sandpaper, and put it into the center of the bottom of the above-mentioned quartz beaker.

[0041] S2. Place the quartz beaker obtained in step S1 in a household microwave oven, continuously feed argon gas to carry out microwave treatment on the quartz beaker for about 120s...

Embodiment 2

[0044] A method for rapidly growing tungsten metal single atoms on a carbon-based carrier by microwave-induced metal discharge, comprising the following steps:

[0045] S1. Add 200mg of conductive carbon fiber and 10mg of urea to 30mL of ethanol solvent, and use an ultrasonic cell pulverizer with a power of 600W to mix evenly for 60s to obtain a carrier solution; after the ethanol volatilizes until the solution becomes viscous (the concentration of conductive carbon fiber is about 20mg / mL), the viscous carrier solution is coated on the cup wall of the 200mL quartz beaker with a brush, and the thickness of the carrier coating is about 0.2cm;

[0046] Then polish the tungsten metal wire with a length of 5 cm and a diameter of 0.2 cm with sandpaper, and put it into the center of the bottom of the above-mentioned quartz beaker.

[0047] S2. Place the quartz beaker obtained in step S1 in a household microwave oven, continuously feed argon gas to carry out microwave treatment on th...

Embodiment 3

[0052] A method for rapidly growing molybdenum metal single atoms on a carbon-based carrier by microwave-induced metal discharge, comprising the following steps:

[0053] S1. Add 200mg of conductive carbon fiber and 10mg of urea to 30mL of ethanol solvent, and use an ultrasonic cell pulverizer with 600W power to mix evenly for 60s to obtain a carrier solution; after the ethanol volatilizes until the solution becomes viscous (the concentration of conductive carbon fiber is about 25mg / mL), the viscous carrier solution is coated on the cup wall of the 200mL quartz beaker with a brush, and the thickness of the carrier coating is about 0.1cm;

[0054] Then be long 5cm, the molybdenum metal wire that diameter is 0.2cm is polished bright with sandpaper, puts into the bottom center of above-mentioned quartz beaker;

[0055] S2. The quartz beaker obtained in step S1 is placed in a household microwave oven, and the argon gas is continuously fed into the quartz beaker to perform microwa...

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Abstract

The invention provides a method for rapidly growing metal single atoms on a carbon-based carrier by using microwave to induce metal to discharge and application of a metal monatomic carbon-based material prepared by the method. Firstly, the surface of an electric discharge carrying container is coated with a carrier coating containing a carbon-based material, and then metal wires to grow the metalsingle atoms are placed into the electric discharge carrying container; the electric discharge carrying container is placed in a microwave generation system and is subjected to microwave treatment inan inert gas such as argon for 10-120 seconds; in the process, the microwave induces the metal wires to discharge to emit electrons, the inert gas medium is stimulated to generate high-energy plasmato act on the surfaces of the metal wires, and the metal single atoms grow and deposit on the surface of the carrier coating after the metal single atoms are induced from the metal wires and sputter out; and finally, the carrier coating is scraped out, cleaned and dried to obtain the carbon-based material loaded with the metal atoms. According to the method for rapidly growing the metal single atoms on the carbon-based carrier by using the microwave to induce the metal to discharge and the application of the metal monatomic carbon-based material prepared by the method, the method is simple, rapid and low in cost, the loading capacity of the metal single atoms is high, the metal single atoms are not prone to agglomeration, and the prepared metal monatomic carbon-based material has perfect electro-catalytic property.

Description

technical field [0001] The invention belongs to the technical field of preparation of functional nanometer materials, and in particular relates to a method for rapidly growing metal single atoms on a carbon-based carrier by microwave-induced metal discharge and its application. Background technique [0002] Metal single-atom catalysts, because each active site has only one metal atom to bond with adjacent atoms through covalent or ionic interactions, can maximize the exposure of metal sites to achieve high catalytic efficiency. Compared with micro-nano metal catalysts, metal single-atom catalysts have the effect of "using one as ten and one as hundreds", so they have great research value and application prospects in the fields of energy storage, photo / electrocatalysis and so on. Especially in the field of electrocatalysis, metal single-atom catalysts can adsorb reactants on the surface of catalysts to form stable intermediates, reduce kinetic barriers, and promote charge tra...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C14/18C25B1/02C25B11/06B01J23/30B01J23/42B01J23/72B01J23/06B01J23/755B01J37/34
CPCC23C14/34C23C14/185C25B1/02C25B11/04B01J23/30B01J23/42B01J23/72B01J23/06B01J23/755B01J37/346B01J35/399B01J35/33
Inventor 万骏肖志恒李俊锋
Owner WUHAN TEXTILE UNIV
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