Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Defect type sulfur-indium-zinc microsphere visible-light-induced photocatalyst, and preparation method and application thereof

An indium-zinc-sulfur, defect-type technology, applied in chemical instruments and methods, physical/chemical process catalysts, inorganic chemistry, etc., can solve problems such as low hydrogen production efficiency, achieve high photocatalytic activity, rich surface active sites, Simple preparation process

Active Publication Date: 2020-10-20
QILU UNIV OF TECH
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Zn 2 S 4 There is a great advantage in hydrogen production, but the inventors of the present invention have found that the existing ZnIn 2 S 4 There is a defect of low hydrogen production efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Defect type sulfur-indium-zinc microsphere visible-light-induced photocatalyst, and preparation method and application thereof
  • Defect type sulfur-indium-zinc microsphere visible-light-induced photocatalyst, and preparation method and application thereof
  • Defect type sulfur-indium-zinc microsphere visible-light-induced photocatalyst, and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach

[0037] The third embodiment of the present invention provides an application of the defect-type sulfur-indium-zinc microsphere visible light catalyst in photolysis of water to produce hydrogen.

[0038] The fourth embodiment of the present invention provides a method for producing hydrogen by photolysis of water. The above-mentioned defect-type sulfur indium zinc microspheres are added to a system containing water, lactic acid and chloroplatinic acid for light treatment.

[0039] In some examples of this embodiment, the light treatment is to use a 200-400W xenon lamp and a power density of 50-150mW cm -2 Irradiate for 4-6 hours under simulated sunlight conditions.

[0040]In order to enable those skilled in the art to understand the technical solution of the present invention more clearly, the technical solution of the present invention will be described in detail below in conjunction with specific embodiments.

Embodiment 1

[0042] Weigh 0.074g Zn(NO 3 ) 2 ·6H 2 O and 0.15g In(NO 3 ) 3 ·H 2 O stirring (speed is 500r min -1 ) was dissolved in 30 mL of distilled water, and then 0.233 g of L-cysteine ​​was added to continue stirring for 2 h. Hydrothermal reaction at 200°C for 18h. After cooling, the solution was centrifuged (4000r min -1 and centrifuged for 3 min), and the separated precipitate was washed three times with water and ethanol respectively. Vacuum dry in a drying oven at 60°C for 12 hours, and grind the dried powder to obtain ZnIn 2 S 4 Powder material. ZnIn 2 S 4 The powder material is placed in a tube furnace, and hydrogen gas is introduced into the tube furnace, and the flow rate of hydrogen gas is 40mL min -1 , heated up to 80°C at a rate of 2°C / min, fired for 3 hours, and cooled to room temperature to obtain defect-type ZnIn 2 S 4 Powder material.

Embodiment 2

[0044] Weigh 0.074g Zn(NO 3 ) 2 ·6H 2 O and 0.15g In(NO 3 ) 3 ·H 2 O stirring (speed is 500r min -1 ) was dissolved in 30 mL of distilled water, and then 0.233 g of L-cysteine ​​was added to continue stirring for 2 h. Hydrothermal reaction at 200°C for 18h. After cooling, the solution was centrifuged (4000r min -1 and centrifuged for 3 min), and the separated precipitate was washed three times with water and ethanol respectively. Vacuum dry in a drying oven at 60°C for 12 hours, and grind the dried powder to obtain ZnIn 2 S 4 Powder material. ZnIn 2 S 4 The powder material is placed in a tube furnace, and hydrogen gas is introduced into the tube furnace, and the flow rate of hydrogen gas is 40mL min -1 , heated at a rate of 2°C / min to 100°C for 3 hours, and cooled to room temperature to obtain defect-type ZnIn 2 S 4 Powder material.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Login to View More

Abstract

The invention discloses a defect type sulfur-indium-zinc microsphere visible-light-induced photocatalyst, and a preparation method and application thereof. The preparation method comprises the following steps: heating ZnIn2S4 microspheres to 90-120 DEG C in a hydrogen atmosphere, and carrying out heat treatment to obtain the defect type sulfur-indium-zinc microsphere visible-light-induced photocatalyst. The defect type sulfur-indium-zinc microsphere visible-light-induced photocatalyst can broaden the light absorption range of the catalyst, improve the separation efficiency of photo-induced electrons and hole pairs and further improve the photocatalytic efficiency.

Description

technical field [0001] The invention relates to a preparation method and a use method of a photocatalyst, in particular to a defect-type sulfur indium zinc microsphere visible light catalyst, a preparation method and an application. Background technique [0002] The information disclosed in this background section is only intended to increase the understanding of the general background of the present invention, and is not necessarily taken as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to those skilled in the art. [0003] The world today is facing a crisis of energy shortage, and environmental problems have become an obstacle to the further development of human civilization. In solving energy problems, semiconductor photocatalysis has been developed in recent years, and its water splitting to produce hydrogen is a very promising technology. Among many semiconductor photocatalysts, ZnIn 2 S 4 As a ternary metal ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B01J27/04B01J35/08B01J35/10C01B3/04
CPCB01J27/04C01B3/042C01B2203/0277C01B2203/1076B01J35/51B01J35/61B01J35/39Y02E60/36
Inventor 李贞子周卫武佳星王世杰
Owner QILU UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com