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Preparation method of vanadium dioxide-based single crystal and vanadium dioxide-based single crystal

A technology of vanadium dioxide-based single crystal, which is applied in the preparation of vanadium dioxide-based single crystal, and in the field of vanadium dioxide-based single crystal, which can solve the problem of widening thermal hysteresis loop width, reducing the range of resistance change, difficult high-precision and fast response And other issues

Pending Publication Date: 2020-10-30
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] So far, growing vanadium dioxide thin films on titanium dioxide or sapphire substrates is the main method to prepare large-scale vanadium dioxide materials, but it is difficult to produce in large quantities due to the harsh oxygen partial pressure and growth temperature during the growth process. The vanadium dioxide epitaxial film grown on the substrate at the same time is usually a polycrystalline film, which leads to a widening of the thermal hysteresis loop width of the insulator-metal phase transition, and a decrease in the range of resistance change before and after the phase transition, which is difficult to be practically applied to high-precision and fast response

Method used

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  • Preparation method of vanadium dioxide-based single crystal and vanadium dioxide-based single crystal
  • Preparation method of vanadium dioxide-based single crystal and vanadium dioxide-based single crystal
  • Preparation method of vanadium dioxide-based single crystal and vanadium dioxide-based single crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0076] Add 300 mg of vanadium pentoxide powder into a circular single-opening quartz sample tube with an inner diameter of 1 cm and a length of 10 cm, and place it obliquely in a horizontal tubular annealing furnace sample chamber lined with quartz glass with a gas scrubber In the middle, place it obliquely, with an inclination angle of 25°, wash away the oxygen and water in the sample chamber by vacuuming three times and filling it with high-purity nitrogen, keep the airflow at 300 sccm, set the muffle furnace program as: heating at 10°C / min rate, rapidly raising the temperature to 1000°C for 60 hours, and then cooling down at a cooling rate of 10°C / min, the obtained vanadium dioxide single crystal is as follows figure 1 as shown, figure 1 Optical photographs of vanadium dioxide single crystals prepared in this example.

[0077] The single product quality and phase of the sample can be analyzed by four-circle diffractometer and Raman spectrometer, such as figure 2 and im...

Embodiment 2

[0081]Add 500 mg of ammonium metavanadate powder into a circular single-opened corundum sample tube with an inner diameter of 1.2 cm and a length of 12 cm, and place it obliquely in a horizontal tubular annealing furnace sample chamber lined with quartz glass with a gas scrubber In the middle, place it obliquely with an inclination angle of 15°, wash away the oxygen and water in the sample chamber by vacuuming three times and filling it with high-purity argon, keep the air flow at 200 sccm, set the muffle furnace program as: 10°C / min The heating rate is to rapidly raise the temperature to 1100°C for 60 hours, and then lower the temperature at a cooling rate of 15°C / min. The obtained sample was subjected to the same identification and detection analysis as in the above-mentioned Example 1, and it was determined that the obtained sample was a high-quality vanadium dioxide single crystal.

[0082] The insulator-metal phase transition behavior of the above-mentioned vanadium dioxi...

Embodiment 3

[0084] Add 300mg of vanadium pentoxide and 15mg of molybdenum trioxide powder into a circular single-opening quartz sample tube with an inner diameter of 1.2 cm and a length of 12 cm, and place it obliquely in a horizontal corundum-lined tube with a scrubber In the sample chamber of the tubular annealing furnace, the inclination angle is 25°. The oxygen and water in the sample chamber are washed away by vacuuming three times - filling with high-purity nitrogen, and the air flow is kept at 300 sccm. The muffle furnace program is set as: at 8°C / min heating rate, rapid heating to 980°C for 60 hours, and then cooling at a cooling rate of 8°C / min. The obtained sample was subjected to the same identification and detection analysis as in the above-mentioned Example 1, and it was determined that the obtained sample still maintained high crystal quality.

[0085] The insulator-metal phase transition behavior of the above-mentioned vanadium dioxide single crystal can be measured on the...

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Abstract

The invention provides a method for preparing a vanadium dioxide-based single crystal. The method comprises the following steps of: in the flowing inert gas atmosphere, heating a raw material containing a vanadium source to a temperature between 950 DEG C and 1150 DEG C, keeping the temperature for 24-72 hours, and then cooling to room temperature at a speed not higher than 20 DEG C / min to obtaina vanadium dioxide-based single crystal, wherein the vanadium source is an oxygen-containing compound which does not contain other metal elements other than vanadium, and vanadium is + 4 or + 5 valent, and the molar ratio of oxygen to vanadium is 2: 1 or more. The vanadium dioxide-based single crystal prepared by the method is a rod-like single crystal with the length of more than 1mm and the diameter of more than 100 microns.

Description

technical field [0001] The invention relates to the field of insulator-metal phase change materials, in particular to a preparation method of a vanadium dioxide-based single crystal and the vanadium dioxide-based single crystal. Background technique [0002] Vanadyl oxides are an important class of strongly correlated materials whose crystal structure, electronic structure, and spin structure change strongly at specific temperatures, resulting in an astute response to specific conditions. [0003] Vanadium dioxide is a particularly special vanadium oxide compound, which can undergo an insulator-metal phase transition around 340K, a tetragonal rutile phase vanadium dioxide in a metallic state above 340K, and a monoclinic phase vanadium dioxide in an insulator state below 340K , the resistance change before and after the phase change can reach 10 5 Times, and has a very fast temperature response, can be used as a resistance switch that is extremely sensitive to temperature, s...

Claims

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Application Information

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IPC IPC(8): C30B29/16C30B29/60C30B25/00
CPCC30B25/00C30B29/16C30B29/60
Inventor 吴长征吴俊驰郭宇桥杨波谢毅
Owner UNIV OF SCI & TECH OF CHINA
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