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Phosphide-modified silicon-based photoelectric cathode material and preparation method thereof

A photocathode and phosphide technology, applied in the direction of electrodes, electrolytic processes, electrolytic components, etc., can solve problems such as catalyst blockage, catalytic activity reduction, and adverse effects of electron transmission, and achieve the effect of overcoming corrosion and improving photocatalytic activity

Active Publication Date: 2020-12-25
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The introduction of passivation layer materials can effectively improve the corrosion resistance of silicon, but the introduction of passivation layer will have an adverse effect on electron transport, resulting in a greatly reduced catalytic activity. At the same time, the passivation layer covering the surface of the catalytic layer will cause catalyst blockage, It is difficult to achieve the optimum activity of the catalyst

Method used

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  • Phosphide-modified silicon-based photoelectric cathode material and preparation method thereof
  • Phosphide-modified silicon-based photoelectric cathode material and preparation method thereof
  • Phosphide-modified silicon-based photoelectric cathode material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0027] Cut p-type single-sided polished silicon with a resistance value of 1-10Ω into 2cm×2cm, ultrasonically clean it with deionized water, ethanol and acetone for 30min, then immerse in 5% HF solution for 10min, rinse with deionized water and blow with nitrogen Dry, place in the atomic layer deposition system, use tetrakis(dimethylamino)titanium and water as reaction precursors, deposit 125 cycles at 150°C, and obtain TiO with a thickness of 5nm 2 . The WP particles with mesoporous structure were dispersed in a mixture of methanol (50%) and ethanol (50%), and ultrasonicated for 30 min to obtain a 10 mg / mL dispersion. Then take 100uL of WP dispersion and spin coat on TiO 2 / Si substrate, the rotation speed is 3000r / min, and the time is 60s. Configure TiCl with a concentration of 0.01mol / L 4 The methanol dispersion is spin-coated on the surface of the silicon wafer at a spin speed of 3000r / min for 60s. Put the silicon wafer in an oven at 60°C for 10 minutes, then place it ...

Embodiment 2

[0029] Cut p-type single-sided polished silicon with a resistance value of 5-15Ω into 2cm×2cm, ultrasonically clean it with deionized water, ethanol and acetone for 30min, then immerse in 5% HF solution for 10min, rinse with deionized water and blow with nitrogen Dry, place in the atomic layer deposition system, use tetrakis(dimethylamino)titanium and water as reaction precursors, deposit 250 cycles at 150°C, and obtain TiO with a thickness of 10nm 2 . Disperse the mesoporous MoP powder in a mixture of methanol (50%) and ethanol (50%), and sonicate for 30 min to obtain a 10 mg / mL dispersion. Then take 100uL of MoP dispersion and spin-coat on TiO 2 / Si substrate, the rotation speed is 4000r / min, and the time is 60s. Configure TiCl with a concentration of 0.1mol / L 4 The methanol dispersion is spin-coated on the surface of the silicon wafer at a spin speed of 5000r / min for 60s. Put the silicon wafer in an oven at 60°C for 10 minutes, then place it in a tube furnace with argon...

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Abstract

The invention discloses a high-activity and high-stability phosphide-modified silicon-based photocathode material, and belongs to the technical field of photoelectrocatalysis. The material comprises alight absorption substrate, a protective layer with an electron transmission function, an electrocatalytic layer and a bonding layer; the light absorption substrate is made of p-type silicon; the protective layer is made of amorphous TiO2 with a compact structure; the electrocatalyst is made of phosphide with a mesoporous structure; the bonding layer is made of TiO2 with a loose structure. The invention also discloses a general preparation method of the silicon-based photocathode material. The method comprises the following steps of: firstly, depositing the compact TiO2 protective layer on asilicon surface through an atomic layer deposition process; carrying out spin-coating of the electrocatalyst with high activity; carrying out spin coating of a TiCl4 solution; and finally, carrying out heat treatment on a photoelectrode to hydrolyze TiCl4 into TiO2 and form chemical bonds with phosphide, so as to enable the electrocatalyst to be firmly adhered to the surface of the substrate. Thesilicon-based photocathode material prepared by the invention has great application prospect and social value in the field of solar energy utilization and conversion.

Description

technical field [0001] The invention relates to the technical field of solar energy conversion photoelectrodes, in particular to a photocathode material and a preparation method thereof. Background technique [0002] Solar energy has the characteristics of universality, cleanliness, and sustainability. Converting solar energy into storable chemical energy, such as hydrogen energy, is of great significance for the development and utilization of new energy sources. Photocatalytic water splitting to produce hydrogen has attractive application prospects, but the current bottleneck lies in how to prepare efficient and stable photoelectrode materials and their industrialized preparation methods. [0003] Single crystal silicon has excellent photoelectric conversion ability, but there are disadvantages such as low photocatalytic efficiency and poor photochemical stability when pure silicon substrate is used as a photoelectrode. Studies have shown that modifying the catalyst layer ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25B11/06C25B11/04C25B1/04
CPCC25B1/04Y02E60/36Y02P20/133
Inventor 高濂李峰张鹏刘静
Owner SHANGHAI JIAO TONG UNIV
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