Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of phosphide-modified silicon-based photocathode material and preparation method thereof

A photocathode, phosphide technology, applied in electrodes, electrolysis components, electrolysis process, etc., can solve the problems of catalyst blockage, reduced catalytic activity, and difficulty in achieving optimal catalyst activity, and achieves the effect of overcoming easy corrosion and improving photoelectric catalytic activity.

Active Publication Date: 2021-09-07
SHANGHAI JIAO TONG UNIV
View PDF12 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The introduction of passivation layer materials can effectively improve the corrosion resistance of silicon, but the introduction of passivation layer will have an adverse effect on electron transport, resulting in a greatly reduced catalytic activity. At the same time, the passivation layer covering the surface of the catalytic layer will cause catalyst blockage, It is difficult to achieve the optimum activity of the catalyst

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of phosphide-modified silicon-based photocathode material and preparation method thereof
  • A kind of phosphide-modified silicon-based photocathode material and preparation method thereof
  • A kind of phosphide-modified silicon-based photocathode material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Cut p-type single-sided polished silicon with a resistance value of 1-10Ω into 2cm×2cm, ultrasonically clean it with deionized water, ethanol and acetone for 30min, then immerse in 5% HF solution for 10min, rinse with deionized water and blow with nitrogen Dry, place in the atomic layer deposition system, use tetrakis(dimethylamino)titanium and water as reaction precursors, deposit 125 cycles at 150°C, and obtain TiO with a thickness of 5nm 2 . The WP particles with mesoporous structure were dispersed in a mixture of methanol (50%) and ethanol (50%), and ultrasonicated for 30 min to obtain a 10 mg / mL dispersion. Then take 100uL of WP dispersion and spin coat on TiO 2 / Si substrate, the rotation speed is 3000r / min, and the time is 60s. Configure TiCl with a concentration of 0.01mol / L 4 The methanol dispersion is spin-coated on the surface of the silicon wafer at a spin speed of 3000r / min for 60s. Put the silicon wafer in an oven at 60°C for 10 minutes, then place it ...

Embodiment 2

[0029] Cut p-type single-sided polished silicon with a resistance value of 5-15Ω into 2cm×2cm, ultrasonically clean it with deionized water, ethanol and acetone for 30min, then immerse in 5% HF solution for 10min, rinse with deionized water and blow with nitrogen Dry, place in the atomic layer deposition system, use tetrakis(dimethylamino)titanium and water as reaction precursors, deposit 250 cycles at 150°C, and obtain TiO with a thickness of 10nm 2 . Disperse the mesoporous MoP powder in a mixture of methanol (50%) and ethanol (50%), and sonicate for 30 min to obtain a 10 mg / mL dispersion. Then take 100uL of MoP dispersion and spin-coat on TiO 2 / Si substrate, the rotation speed is 4000r / min, and the time is 60s. Configure TiCl with a concentration of 0.1mol / L 4 The methanol dispersion is spin-coated on the surface of the silicon wafer at a spin speed of 5000r / min for 60s. Put the silicon wafer in an oven at 60°C for 10 minutes, then place it in a tube furnace with argon...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
sizeaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a highly active and highly stable phosphide-modified silicon-based photocathode material, relates to the technical field of photoelectric catalysis, and comprises a light-absorbing substrate, a protective layer with electron transmission, an electrocatalytic layer and an adhesive layer. Among them, the light-absorbing substrate is p-type silicon, and the protective layer is amorphous TiO with a dense structure. 2 , the electrocatalyst is a mesoporous structure phosphide, and the bonding layer is TiO with a loose structure 2 . The invention also discloses a general preparation method for silicon-based photocathode materials: first, dense TiO is deposited on the surface of silicon by atomic layer deposition 2 protective layer; then spin-coat highly active electrocatalyst; then spin-coat TiCl 4 solution; finally, the photoelectrode is heat-treated to make the TiCl 4 Hydrolyzed to TiO 2 And form a chemical bond with the phosphide, so that the electrocatalyst can be firmly adhered to the substrate surface. The silicon-based photocathode material prepared by the invention has great application prospects and social value in the field of solar energy utilization and conversion.

Description

technical field [0001] The invention relates to the technical field of solar energy conversion photoelectrodes, in particular to a photocathode material and a preparation method thereof. Background technique [0002] Solar energy has the characteristics of universality, cleanliness, and sustainability. Converting solar energy into storable chemical energy, such as hydrogen energy, is of great significance for the development and utilization of new energy sources. Photocatalytic water splitting to produce hydrogen has attractive application prospects, but the current bottleneck lies in how to prepare efficient and stable photoelectrode materials and their industrialized preparation methods. [0003] Single crystal silicon has excellent photoelectric conversion ability, but there are disadvantages such as low photocatalytic efficiency and poor photochemical stability when pure silicon substrate is used as a photoelectrode. Studies have shown that modifying the catalyst layer ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C25B11/054C25B11/059C25B11/087C25B1/55C25B1/04
CPCC25B1/04Y02E60/36Y02P20/133
Inventor 高濂李峰张鹏刘静
Owner SHANGHAI JIAO TONG UNIV
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com