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A kind of silicon integrated BTO thin film and preparation method thereof

A film and transition layer technology, applied in the field of silicon integrated BTO film and its preparation, can solve problems such as poor performance of BTO film, and achieve the effects of improved breakdown field strength, high stability in wide temperature and wide frequency, and high cycle performance

Active Publication Date: 2022-02-11
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the different structures of silicon wafers and BTO, the performance of BTO thin films prepared on silicon wafers is often poor. How to prepare BTO ferroelectric thin films with excellent performance on wafers is an industrial problem with a large application background.

Method used

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  • A kind of silicon integrated BTO thin film and preparation method thereof
  • A kind of silicon integrated BTO thin film and preparation method thereof
  • A kind of silicon integrated BTO thin film and preparation method thereof

Examples

Experimental program
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preparation example Construction

[0040] The preparation method of the silicon-integrated BTO thin film of the present invention comprises the following steps.

[0041] (1) Si substrate processing

[0042] The Si substrate is immersed in hydrofluoric acid and deionized water in sequence, and cleaned to remove impurities and natural oxide layers on the surface of the Si substrate. on the sample stage.

[0043] (2)8Al 2 o 3 :96HfO 2 Preparation of the transition layer

[0044] Growth of 8Al with preset thickness on Si substrate by atomic layer deposition 2 o 3 :96HfO 2 transition layer.

[0045] (3) BaTiO 3 Film preparation

[0046] 8Al by radio frequency magnetron sputtering 2 o 3 :96HfO 2 Growth of fixed time BaTiO on the transition layer 3 film. RF magnetron sputtering using BaTiO 3 target, the background vacuum in the magnetron sputtering chamber is better than 10 -5 mbar, the working gas is a mixed gas of argon and oxygen, adjust the sputtering pressure, radio frequency sputtering power, su...

Embodiment

[0050] The preparation method of the silicon-integrated BTO film of the present embodiment comprises the following steps:

[0051] (1) Si substrate processing

[0052] A P-type (100) Si wafer doped with boron is selected. Briefly immerse in hydrofluoric acid with a solute volume fraction of 2% to remove SiO on the surface of the Si substrate 2 Oxide layer and other impurities; followed by a quick rinse with deionized water to remove residual hydrofluoric acid; then the substrate was blown dry with high-pressure nitrogen and sent to the vacuum deposition chamber of the atomic layer deposition equipment and placed on the sample stage.

[0053] (2)8Al 2 o 3 :96HfO 2 Preparation of transition layer

[0054] Growth of 8Al with preset thickness on Si substrate by atomic layer deposition 2 o 3 :96HfO 2 transition layer. Using the conditions shown in Table 1, change the HfO 2 Loop and Al 2 o 3 Cyclic deposition sequence to grow HfO on Si substrates 2 :Al 2 o 3 8Al with ...

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Abstract

The invention discloses a silicon-integrated BTO thin film and a preparation method thereof. The silicon-integrated BTO thin film includes a Si substrate, 8Al 2 o 3 :96HfO 2 transition layer and BaTiO 3 thin film, 8Al 2 o 3 :96HfO 2 The transition layer is set on the surface of Si substrate, BaTiO 3 Thin film set on 8Al 2 o 3 :96HfO 2 Transition layer surface; manufacturing method, including the following process: adopting atomic layer deposition method to grow 8Al on Si substrate 2 o 3 :96HfO 2 Transition layer; using radio frequency magnetron sputtering method in 8Al 2 o 3 :96HfO 2 Growth of BaTiO on the transition layer 3 The thin film is annealed after radio frequency magnetron sputtering to obtain the silicon-integrated BTO thin film. The thin film of the invention greatly improves the ferroelectric performance of the thin film on the silicon substrate, and its fatigue performance and wide temperature and wide frequency performance are also maintained at a relatively high level.

Description

technical field [0001] The invention relates to the field of ferroelectric thin film devices and manufacturing methods thereof, in particular to capacitors or storage devices, and in particular to a silicon-integrated BTO thin film and a preparation method thereof. Background technique [0002] The preparation of ferroelectric thin films with excellent properties on silicon wafers is very important for the application of microelectronics industry. In a metal ferroelectric semiconductor field effect transistor (MFS-FET), a ferroelectric thin film is used as a gate insulator. Memory devices (ferroelectric random access memories FRAM and DRAM) fabricated using ferroelectric thin films are also research hotspots. Barium titanate (BaTiO 3 , BTO) as a typical ferroelectric material, due to its excellent ferroelectricity, electro-optic and nonlinear optical properties, it has been widely used in storage devices, multilayers, optoelectronic devices, infrared detectors and other ap...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/423C23C16/40C23C14/08
CPCH01L29/78391H01L29/42364C23C16/40C23C14/088
Inventor 刘明罗健金靓
Owner XI AN JIAOTONG UNIV
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