Cleaning solution used after IC copper process CMP and preparation method thereof

Abstract

The invention discloses a cleaning solution used after CMP (Chemical Mechanical Polishing) in an IC (Integrated Circuit) copper process, which is prepared by the following method: adding a surfactant,a wetting agent, an organic phosphine chelating agent, an organic amine chelating agent, quaternary ammonium base and an organic solvent into water, uniformly stirring to form a transparent solution,adding a defoaming agent, uniformly stirring, and regulating the pH value of the solution by using a pH regulator. The cleaning solution can be used for an integrated circuit copper interconnection process, is a water-based system composed of one or more organic amines and multiple complexing agents, is suitable for cleaning after CMP in the semiconductor copper manufacturing process, can effectively remove particles and organic residues on the surface of a wafer, and guarantees the yield and reliability after CMP.

Description

technical field [0001] The invention relates to cleaning after chemical mechanical polishing (CMP), in particular to a cleaning solution for IC copper manufacturing process after CMP and a preparation method thereof. Background technique [0002] With the rapid development of VLSI integration, the gate size is also shrinking rapidly. The Damascus interconnection process basically uses copper as the interconnection metal to achieve lower resistivity and RC delay, and the anti-electromigration performance is also much better than aluminum. Metal, the current global planarization process of the copper interconnection process can only be industrialized by the CMP process. After the CMP process, the surface of the wafer is subjected to the action of the polishing liquid to produce pollutants such as abrasive particles and organic residues, which require a post-cleaning process. The traditional copper The cleaning solution after CMP is mainly acidic products such as hydrofluoric a...

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Problems solved by technology

It is also reported that dilute hydrofluoric acid (HF), tetramethylammonium hydroxide (TMAH), tetraethylammonium hydroxide (TEAH), ammonium hydroxide (NH4OH) and other components such as strong acid, strong alkali, and ozone water are used Cleaning after Cu interconnection CMP, but most components are highly corrosive, which can easily cause problems such as increased surface roughness and excessive substrate loss after cleaning, and some components are also highly toxic and volatile. Very irritating to human skin

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