Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Organic spin valve device based on two-dimensional metal organic framework thin film material and preparation method

A metal-organic framework and thin-film material technology, applied in the field of spintronics, can solve the problems of insufficient material system, high cost, unfavorable industrialization, etc., and achieve the effect of low equipment requirements, low cost, and reduction of difficulty and complexity.

Active Publication Date: 2020-12-29
TIANJIN UNIV
View PDF9 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current organic spin valve device has a strict preparation process, insufficient and expensive material systems, and needs to prepare a good interface, which is not conducive to industrialization.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Organic spin valve device based on two-dimensional metal organic framework thin film material and preparation method
  • Organic spin valve device based on two-dimensional metal organic framework thin film material and preparation method
  • Organic spin valve device based on two-dimensional metal organic framework thin film material and preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] The method for preparing a two-dimensional metal-organic framework film material on a glass substrate (in order to test the properties of the two-dimensional metal-organic framework film material, it is selected to be prepared on a glass substrate), comprising the following steps:

[0042] (1) Immerse the glass substrate in deionized water and ethanol in order to ultrasonically wash and dry; then immerse in a mixed solvent (in order to adapt to the glass substrate, the mixed solvent is: by volume ratio 7:3 by H 2 SO 4 and H 2 o 2 Composition), soaked at 85°C for 30 minutes, took out, washed with deionized water and dried; immersed in (3-aminopropyl)trimethoxysilane solution with a concentration of 1% by volume, and the solvent of the silane solution was anhydrous normal Octanol, heated to reflux for 0.25 hours, taken out, washed with absolute ethanol, and dried;

[0043] (2) Copper acetate monohydrate was dissolved in absolute ethanol to obtain 0.1 mM solution A, and...

Embodiment 2

[0052] A method for preparing an organic spin valve device based on a two-dimensional metal organic framework thin film material, comprising the following steps:

[0053] (1) Cut strontium titanate (001) substrate into 0.5×0.5cm 2 A square of 200 μm × 4mm strip mask is fixed on the substrate to obtain a substrate with a strip mask. In the magnetron sputtering apparatus, the substrate provided with a strip mask is fixed on the sample Put it on, and evacuate until the vacuum degree reaches 5×10 -5 Above Pa; heat to 770°C, adjust the flow rate of high-purity argon gas to 10 sccm and the flow rate of oxygen to 6 sccm for ventilation, adjust the air pressure to 0.5 Pa, turn on the sputtering switch, adjust the radio frequency power to 120W, and sputter the lanthanum strontium manganese oxygen target. The deposition rate is 0.8nm / min, and a strontium titanate substrate with a strip-shaped lanthanum strontium manganese oxide bottom electrode deposited with a thickness of 50nm is obt...

Embodiment 3

[0062] A method for preparing an organic spin valve device based on a two-dimensional metal organic framework thin film material, comprising the following steps:

[0063] (1) Cut strontium titanate (001) substrate into 0.5×0.5cm 2 A square of 200 μm × 4mm strip mask is fixed on the substrate to obtain a substrate with a strip mask. In the magnetron sputtering apparatus, the substrate provided with a strip mask is fixed on the sample Put it on, and evacuate until the vacuum degree reaches 5×10 -5 Above Pa; heat to 800°C, adjust the flow rate of high-purity argon gas to 15 sccm and the flow rate of oxygen to 9 sccm for ventilation, adjust the air pressure to 0.8 Pa, turn on the sputtering switch, adjust the radio frequency power to 150W, and sputter the lanthanum strontium manganese oxygen target. The deposition rate is 0.8nm / min, and a strontium titanate substrate with a strip-shaped lanthanum strontium manganese oxide bottom electrode deposition thickness of 40nm is obtained;...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses an organic spin valve device based on a two-dimensional metal organic framework film material and a preparation method. The preparation method comprises steps of (1) preparinga strip-shaped lanthanum strontium manganese oxygen bottom electrode on a substrate through a magnetron sputtering method, and obtaining the substrate with the strip-shaped lanthanum strontium manganese oxygen bottom electrode; (2) immersing the substrate in the step (1) into an aminosilane solution for reaction, taking out, washing and drying; (3) dissolving a copper salt, a nickel salt or a cobalt salt to prepare a solution A, and preparing an organic ligand into a solution B; (4) soaking the product obtained in the step (2) in a solution A and a solution B in sequence; (5) drying; and (6) evaporating a layer of metal cobalt film as a top electrode on the upper surface of the product obtained in the step (5) through a strip-shaped mask plate, and then evaporating a gold film as a protective layer. The method is advantaged in that the layer-by-layer self-assembly method can effectively solve problems that the two-dimensional metal organic framework material is difficult to dissolve and form a film, and are simple, low in cost, low in equipment requirement and suitable for large-scale production.

Description

technical field [0001] The invention belongs to the technical field of spin electronics, and relates to an organic spin valve based on a two-dimensional metal organic framework thin film material and the two-dimensional metal organic framework thin film material as an intermediate layer. [0002] technical background [0003] Metal-organic frameworks are a class of crystalline nanoporous materials in which inorganic metal ions and organic ligands are combined through coordination. By changing metal nodes and various types of organic ligands, so far, researchers have constructed a series of novel metal-organic frameworks with one-dimensional, two-dimensional, and three-dimensional characteristics. Metal-organic frameworks have been used in many fields, such as gas storage, gas separation and catalysis. The conductive two-dimensional metal organic framework material is an emerging material in recent years. The d-π conjugation makes it have high conductivity and mobility. This ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/14H01L43/06H01L43/08C23C14/35C23C14/08C23C14/04C23C14/20C23C14/24C23C26/00C23C28/00H10N52/01H10N50/10H10N52/00
CPCC23C14/35C23C14/08C23C14/042C23C14/20C23C14/24C23C26/00C23C28/322C23C28/345H10N52/00H10N52/01H10N50/10Y02E10/549
Inventor 陈龙金朝宋肖瑜王新月
Owner TIANJIN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products