A kind of n-type high-efficiency solar cell and preparation method thereof

A solar cell and N-type technology, which is applied in the field of solar cells, can solve the problems that the efficiency and yield of heterojunction solar cells are greatly affected, and achieve the effects of improving cell yield, reducing production costs, and improving utilization

Active Publication Date: 2021-07-27
CHANGZHOU SHICHUANG ENERGY CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Due to the presence of metal impurities in solar-grade Czochralski monocrystalline silicon rods, mainly transition metal impurities, deep-level recombination centers or metal precipitation will be formed. However, there is no high-temperature process in the process of heterojunction solar cells to migrate metal impurities and Segregation, resulting in the content of metal impurities on silicon wafers has a great impact on the efficiency and yield of heterojunction solar cells

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of n-type high-efficiency solar cell and preparation method thereof
  • A kind of n-type high-efficiency solar cell and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0034] The preparation method of the N-type high-efficiency heterojunction solar cell of the present invention first performs gettering treatment on the N-type silicon wafer, and then completes the conventional production of the solar cell, and the gettering treatment includes the following steps:

[0035] (1) Clean the silicon wafer;

[0036] (2) Coating or depositing a layer of gettering source on the front and back of the silicon wafer;

[0037] (3) The silicon wafer coated or deposited with the gettering source is heat-treated in a chain annealing furnace to complete the gettering, and a gettering layer is formed on the surface of the silicon wafer;

[0038] (4) Erosion removes the gettering layer on the surface of the silicon wafer.

[0039] As another preferred solution of the present invention, step (4) can also remove the gettering layers on the front and back of the silicon wafer in the subsequent texturing process of conventional battery production, which further si...

Embodiment 1

[0043] (101) Take an N-type silicon wafer with the same or close minority carrier lifetime, first wash it with NaOH, then mix it with HF and HCL, and dry it;

[0044] (102) Apply a layer of gettering source on the surface of the silicon wafer by printing, rolling, spraying or spin-coating a liquid source on the front and back of the silicon wafer respectively. The liquid source can be a phosphorus-containing slurry or a boron-containing slurry , in this embodiment, roll-coat phosphoric acid solution on the front and back of the silicon wafer to form a gettering source on the surface of the silicon wafer;

[0045] (103) Send the silicon wafers coated with gettering sources on the surface into a chain annealing furnace for heat treatment. The chain annealing furnace is equipped with 5 temperature zones, and the temperature of each temperature zone is set to 530°C, 670°C, and 770°C respectively , 740°C, and 500°C, divided into four groups, and heat-treated in a chain annealing fu...

Embodiment 2

[0058] (201) Take an N-type silicon wafer with the same or close minority carrier lifetime, first wash it with NaOH, then mix it with HF and HCL, and dry it;

[0059] (202) Send the silicon wafer into a tubular diffusion furnace, which is filled with nitrogen and oxygen carrying a liquid source, and a layer of gettering source is deposited on the front and back of the silicon wafer through high-temperature diffusion. The liquid source can be Phosphorus oxychloride or boron tribromide, in this embodiment, a layer of boron source is deposited on the surface of the silicon wafer as a gettering layer by high-temperature diffusion of boron tribromide in a tubular diffusion furnace;

[0060] (203) Send the silicon wafer with the gettering source deposited on the surface into the chain-type annealing furnace for gettering treatment. The chain-type annealing furnace is equipped with 5 temperature zones, and the temperature of each temperature zone is set to 530°C, 670°C, 770°C, respect...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an N-type high-efficiency heterojunction solar cell and a preparation method thereof. The N-type high-efficiency solar cell is an N-type high-efficiency heterojunction solar cell made of an N-type silicon wafer; N-type silicon wafers undergo gettering treatment, and then complete the conventional production of heterojunction solar cells; the gettering treatment includes the following steps: (1) Cleaning the silicon wafer; (2) Coating or depositing a layer on the front and back of the silicon wafer gettering source; (3) heat-treat the silicon wafer coated or deposited with the gettering source through a chain annealing furnace to complete the gettering, and form a layer of gettering layer on the surface of the silicon wafer; (4) etch and remove the silicon wafer surface gettering layer. The invention reduces the metal impurity content in the silicon wafer, improves the minority carrier life of the silicon wafer, and finally improves the conversion efficiency of the battery; makes the efficiency distribution of the battery more concentrated, and improves product consistency; reduces the edge leakage rate of the battery, and improves the battery efficiency. Battery yield.

Description

technical field [0001] The invention relates to the technical field of solar cells, in particular to an N-type high-efficiency solar cell and a preparation method. Background technique [0002] At present, most crystalline silicon solar cells in the world use the standard process of traditional P-type cells. However, with the gradual development of high-efficiency crystalline silicon cell manufacturing technology, P-type cells are facing capital and technology investment margins after the conversion efficiency reaches more than 22%. Due to the effect of diminishing returns, it is difficult to further improve the conversion efficiency. Therefore, a large number of solar cell manufacturers have begun to focus on the commercialization of N-type solar cells, such as heterojunction (HJT) cells and interdigitated back contact (IBC) cells. Compared with P The higher the type of silicon wafer, it is conducive to the further improvement of battery efficiency. [0003] Due to the pr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/074H01L31/0288
CPCH01L31/1804H01L31/186H01L31/1864H01L31/0288H01L31/074Y02P70/50
Inventor 任常瑞张佳舟绪欣符黎明
Owner CHANGZHOU SHICHUANG ENERGY CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap