Unlock instant, AI-driven research and patent intelligence for your innovation.

A kind of pump light source and preparation method based on vcsel

A pumping light source and laser technology, which is applied to lasers, laser components, semiconductor lasers, etc., can solve the problems of low threshold current, small size, high coupling efficiency, etc., and achieve the effect of reducing loss

Active Publication Date: 2022-04-19
BEIJING UNIV OF TECH +1
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Compared with edge-emitting semiconductor lasers, vertical cavity surface-emitting lasers (VCSEL) have the advantages of small size, circular spot, low threshold current, single longitudinal mode output, and high coupling efficiency, and are more suitable as pump sources; however, the existing The vertical cavity surface emitting laser has problems such as loss correction

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of pump light source and preparation method based on vcsel
  • A kind of pump light source and preparation method based on vcsel
  • A kind of pump light source and preparation method based on vcsel

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0035] Such as figure 2 As shown, the present invention provides a method for preparing the above-mentioned pump light source, including:

[0036] Step 1, disposing the two-dimensional VCSEL array chip 1 on the bottom of the substrate layer 2;

[0037] Step 2, etching a plurality of grooves 3 on the top of the substrate layer 2 along the laser emitting direction;

[0038] Step 3, filling the trench 3 with a first material to form a filler layer 4; wherein, the refractive index of the first material is higher than that of the substrate material, and the absorption rate of the laser emitted by the VCSEL is lower than that of the substrate material;

[0039] Step 4, connect the optical coupling system 5 on the top of the substrate layer 3 , and weld the heat sink 6 on the bottom of the two-dimensional VCSEL array chip 1 .

[0040] The advantages of the present invention are:

[0041] The present invention etches a groove on the substrate layer, and fills the groove with a mat...

Embodiment 1

[0044] The invention provides a structure and preparation method of a GaAs substrate layer with a specific groove, specifically comprising:

[0045] Clean and dehydrate the 350μm thick GaAs substrate, and use HMDS to form a film; use the spin coating method to coat the liquid phase photoresist material; perform soft baking at 90°C to 100°C, and then place it on a cold plate Lower the temperature; align the mask plate with the structure corresponding to the VCSEL light-emitting unit with the GaAs substrate, and perform deep ultraviolet exposure; bake on a hot plate at 100 ° C ~ 110 ° C; spin-spray the developer on the light On the resist, dissolve the soluble area of ​​the photoresist; bake at 120°C-140°C to volatilize the remaining photoresist solution; use dry etching technology to remove the position corresponding to the VCSEL light-emitting unit to a depth of 345μm GaAs material;

[0046] Place the GaAs substrate with grooves obtained in the above steps at 300°C to 600°C, ...

Embodiment 2

[0049] The invention provides a structure and preparation method of a GaAs substrate layer with a specific groove, specifically comprising:

[0050]Clean and dehydrate the 350μm thick GaAs substrate, and use HMDS to form a film; use the spin coating method to coat the liquid phase photoresist material; perform soft baking at 90°C to 100°C, and then place it on a cold plate Lower the temperature; align the mask plate with the structure corresponding to the VCSEL light-emitting unit with the GaAs substrate, and perform deep ultraviolet exposure; bake on a hot plate at 100 ° C ~ 110 ° C; spin-spray the developer on the light On the resist, dissolve the soluble area of ​​the photoresist; bake at 120°C to 140°C to evaporate the remaining photoresist solution; use dry etching technology to remove the position corresponding to the VCSEL light-emitting unit to a depth of 345μm GaAs material;

[0051] Place the GaAs substrate with grooves obtained in the above steps at 300°C to 600°C,...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
depthaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a VCSEL-based pumping light source and a preparation method, comprising: a two-dimensional VCSEL array chip, a substrate layer and an optical coupling system; the two-dimensional VCSEL array chip is arranged at the bottom of the substrate layer; the top of the substrate layer is emitted along the laser A plurality of grooves are etched in the direction, and the grooves are filled with the first material to form a filler layer; wherein, the refractive index of the first material is higher than that of the substrate material, and the absorption rate of the laser light emitted by the VCSEL is lower than that of the substrate material; the substrate layer The top of the VCSEL is connected to an optical coupling system, which focuses the laser light emitted by the two-dimensional VCSEL array chip into a solid-state laser pumped by a fiber laser or a semiconductor laser. The present invention etches a groove on the substrate layer, and fills the groove with a material with a higher refractive index than the substrate material and a lower absorption rate of the VCSEL emitted laser light than the substrate material, which can reduce the loss when the VCSEL is used as a pumping source .

Description

technical field [0001] The invention relates to the technical field of semiconductor laser pumping, in particular to a VCSEL-based pumping light source and a preparation method. Background technique [0002] Fiber lasers have the advantages of good beam quality, high efficiency, good heat dissipation, and high reliability. It is widely used in military defense, medical equipment, large-scale infrastructure construction and other fields. [0003] Solid-state lasers pumped by semiconductor lasers have the characteristics of small size, convenient use, and high output power. They are often used in ranging, tracking, drilling, cutting and welding, semiconductor material annealing, atmospheric detection, spectral research, plasma diagnosis, and pulse holography. Photography and laser fusion. [0004] Solid-state lasers pumped by fiber lasers and semiconductor lasers often use edge-emitting lasers as pump sources. Compared with edge-emitting semiconductor lasers, vertical cavit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/026H01S5/06H01S5/42H01S5/00
CPCH01S5/423H01S5/0085H01S5/026H01S5/06
Inventor 王智勇温丛阳代京京许并社马淑芳李尉
Owner BEIJING UNIV OF TECH