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Compound, preparation method thereof and quantum dot light-emitting diode

A technology for quantum dot luminescence and compound, which is applied in chemical instruments and methods, luminescent materials, semiconductor/solid-state device manufacturing, etc. And other issues

Active Publication Date: 2021-02-09
GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, there is an obvious hole barrier between the HOMO energy level of commonly used hole transport materials and the top energy level of the valence band of quantum dots, which cannot effectively inject holes, resulting in a serious problem of excess electrons in QLEDs.
In addition, there are a large number of anionic dangling bonds and other surface defects on the surface of quantum dots, which will trap electrons and cause non-radiative recombination, which seriously affects the luminous efficiency and luminous intensity of quantum dots.

Method used

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  • Compound, preparation method thereof and quantum dot light-emitting diode
  • Compound, preparation method thereof and quantum dot light-emitting diode
  • Compound, preparation method thereof and quantum dot light-emitting diode

Examples

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preparation example Construction

[0042] A preparation method of a compound, comprising the following steps:

[0043] will structure as Compound A, the structural formula is The compound B and the palladium catalyst are mixed, and the solvent and the alkaline solution are added to obtain the mixture; wherein, the X + is a metal cation; the Y - is an anion connected to an alkyl side chain; the R 1 is a halogen, the R 2 is a halogen, the R 3 is a borate ester group, the R 4 is a borate group;

[0044] The mixture was reacted at 80-120°C for 20h-28h to generate a compound having the structure shown in formula I:

[0045]

[0046] Wherein, the n is a positive integer of 100-300.

[0047] The compound A includes but not limited to 2,7-dibromo-9,9-bis(6-sulfonate butyl)disodium fluoride, 2,7-dibromo-9,9-bis(6-bromobutyl) base) disodium fluorene, 2,7-dibromo-9,9-bis(6-sulfonate butyl)dipotassium fluorene or 2,7-dibromo-9,9-bis(6-bromobutyl) Dipotassium fluorene.

[0048] The compound B is 1,4-phenylen...

Embodiment 1

[0068] The present embodiment provides a kind of preparation method of sodium polyfluorene cophenylene sulfonate (PFP-Na), comprises the following steps:

[0069] (1) Take 300mg of 2,7-dibromo-9,9-bis(6-sulfonate butyl)disodium fluoride, 135mg of 1,4-phenylene diboronic acid ester and 20mg of tetrakis(triphenylene) Phosphine) palladium, placed in the there-necked flask;

[0070] (2) Add 4ml of dimethylformamide, 0.5ml of toluene, and 2ml of 2M aqueous sodium carbonate solution into the there-necked flask;

[0071] (3) Vacuumize the there-necked bottle to remove the gas inside;

[0072] (4) stirring and heating to 100° C., and reacting for 24 hours;

[0073] (5) Add excess acetone and centrifuge, take the precipitate and dissolve it in deionized water, and then dialyze;

[0074] (6) Finally, the product is freeze-dried to obtain sodium polyfluorene co-phenylene sulfonate (PFP-Na), the structure of which is as follows:

[0075]

[0076] Among them, the X + for Na + ;

...

Embodiment 2

[0080] This embodiment provides a positive QLED device and its preparation method, the steps are as follows:

[0081] (1) Clean the ITO glass substrate sequentially with lotion, deionized water, and isopropanol for 10 minutes, then dry it and treat it with UV-ozone for 15 minutes;

[0082] (2) Deposit 30nm PEDOT:PSS as a hole injection layer on the ITO glass substrate by solution method, and then anneal in air at 150°C for 15 minutes;

[0083] (3) Transfer the above substrate to a glove box filled with nitrogen, deposit 30nm TFB as a hole transport layer on the hole injection layer by solution method, and then anneal at 150°C for 30 minutes;

[0084] (4) Deposit 25nm CdSe / ZnS quantum dots on the hole transport layer by solution method as the quantum dot light-emitting layer, and then anneal at 100°C for 15 minutes;

[0085] (5) Deposit the PFP-Na obtained in Example 1 on the quantum dot luminescent layer as an interface modification layer by solution method, the thickness of ...

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Abstract

The invention relates to a compound, a preparation method thereof and a quantum dot light-emitting diode. The compound has a structure shown as a formula I, wherein X < + > is a metal cation; Y<-> isan anion connected with an alkyl side chain; wherein n is a positive integer ranging from 100 to 300. The compound is used as an interface modification material, hole injection and transmission efficiency can be improved, or electron transmission is hindered, charge balance can be promoted, the service life of a QLED can be prolonged, and excellent luminous efficiency of quantum dots can be maintained.

Description

technical field [0001] The invention relates to the field of light-emitting devices, in particular to a compound, a preparation method thereof and a quantum dot light-emitting diode. Background technique [0002] Due to the unique optoelectronic properties of quantum dots, such as continuously adjustable emission wavelength with size and composition, narrow emission spectrum, high fluorescence efficiency, and good stability, quantum dot-based light-emitting diodes (QLEDs) have received extensive attention and research in the field of display. In addition, QLED display also has many advantages that LCD cannot achieve, such as large viewing angle, high contrast ratio, fast response speed, and flexibility, so it is expected to become the next generation of display technology. [0003] After decades of development, the performance of QLED has made great progress. For example, under the premise of no special light extraction layer, the highest reported external quantum efficiency...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08G61/02C09K11/02C09K11/56C09K11/88H01L51/50
CPCC08G61/02C09K11/883C09K11/565C09K11/025C08G2261/124C08G2261/1452C08G2261/312C08G2261/3142C08G2261/18C08G2261/514C08G2261/522C08G2261/95H10K50/115Y02E10/549
Inventor 苏亮
Owner GUANGDONG JUHUA PRINTING DISPLAY TECH CO LTD
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