A kind of quantum dot solar cell and its preparation method

A solar cell and quantum dot technology, applied in the field of solar cells, can solve problems such as limiting the absorption of ultraviolet light by devices, limiting charge collection efficiency, and affecting multi-exciton effects

Active Publication Date: 2022-03-15
NORTHEAST NORMAL UNIVERSITY
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  • Description
  • Claims
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Problems solved by technology

[0003] However, the conduction band position of the electron transport layer of metal oxides is usually slightly higher than that of PbS quantum dots, such energy band arrangement will limit the charge collection efficiency; at the same time, the photosensitive properties of the metal oxides in quantum dot solar cells will affect The stability of the device will limit the absorption of ultraviolet light by the device, affect the multi-exciton effect, and reduce the utilization rate of ultraviolet light

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  • A kind of quantum dot solar cell and its preparation method
  • A kind of quantum dot solar cell and its preparation method
  • A kind of quantum dot solar cell and its preparation method

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[0048] The present invention also provides a method for preparing a quantum dot solar cell described in the above technical solution, comprising the following steps:

[0049] Offers PbS-PbX 2 solution;

[0050] Coating the PbS-PbX on the conductive side of the conductive substrate 2 solution to obtain an electron transport layer;

[0051] preparing a PbS-EDT layer on the surface of the electron transport layer to obtain a hole transport layer;

[0052] An electrode layer is prepared on the surface of the hole transport layer to obtain the quantum dot solar cell.

[0053] In the present invention, unless otherwise specified, all raw materials are commercially available products well known to those skilled in the art.

[0054] The present invention provides PbS-PbX 2 solution. In the present invention, the PbS-PbX 2 The concentration of the solution is preferably 150-250 mg / mL, more preferably 190-200 mg / mL.

[0055] In the present invention, the PbS-PbX 2 The solution is...

Embodiment 1

[0110] Preparation of PbS quantum dot solution coated with oleic acid ligand:

[0111] Mix 0.45g of lead oxide, 18mL of octadecene and 2mL of oleic acid at 95°C and 100r / min for 120min to obtain a lead precursor solution;

[0112] 20mL of the lead precursor solution and 0.2mL of hexamethyldisilazane were mixed for nucleation and growth (95°C, 2min); the solution and acetone after nucleation and growth were mixed at a volume ratio of 1:3 at 150r / min After stirring for 5 minutes at a speed of 150 r / min, centrifuge at a speed of 6000 r / min for 3 min; dissolve the centrifuged solid in 8 mL of n-hexane to obtain the first solution; stir 8 mL of the first solution and 60 mL of acetone at a speed of 150 r / min for 3 min and then in Centrifuge at a speed of 6000r / min for 3min; repeat the steps of dissolution, precipitation and centrifugation twice to obtain the second solid; dissolve 0.75g of the second solid in 15mL of n-hexane and centrifuge at a speed of 8000r / min for 5min; centrifu...

Embodiment 2

[0124] Preparation of PbS quantum dot solution coated with oleic acid ligand:

[0125] Mix 0.45g of lead oxide, 18mL of octadecene and 2mL of oleic acid at 95°C and 100r / min for 120min to obtain a lead precursor solution;

[0126] 20mL of the lead precursor solution and 0.2mL of hexamethyldisilazane were mixed for nucleation and growth; the solution after 20mL of nucleation and growth and 60mL of acetone were stirred at a speed of 150r / min for 5min and then stirred at a speed of 6000r / min Centrifuge at a speed of 6000r / min for 3min; dissolve 0.8g of the centrifuged solid in 8mL of n-hexane to obtain the first solution; centrifuge 8mL of the first solution and 60mL of acetone at a speed of 6000r / min for 3min; repeat the steps of dissolution, precipitation, and centrifugation 2 times to obtain the second solid; dissolve 0.75g of the second solid in 15mL of n-hexane and centrifuge at a speed of 8000r / min for 5min; dry the centrifuged solid at 25°C for 30min to obtain oleic acid l...

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Abstract

The invention belongs to the technical field of solar cells, and in particular relates to a quantum dot solar cell and a preparation method thereof. The quantum dot solar cell provided by the present invention comprises a conductive substrate, an electron transport layer, a hole transport layer and an electrode layer stacked in sequence; the material of the electron transport layer is PbS-PbX 2 ; the PbS‑PbX 2 It is a PbS quantum dot coated with an n-type lead halide ligand, wherein X is a halogen; the material of the hole transport layer is PbS-EDT, and the PbS-EDT is a p-type 1,2-ethanedithiol ligand Coated PbS quantum dots; a p-n junction is formed between the hole transport layer and the electron transport layer. The quantum dot solar cell provided by the invention improves the stability of the quantum dot solar cell and the utilization rate of ultraviolet light on the basis of ensuring better photoelectric conversion efficiency.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a quantum dot solar cell and a preparation method thereof. Background technique [0002] Lead sulfide (PbS) quantum dots are a material that can absorb sunlight in a full spectrum. They have a flexible band structure and multi-exciton effect, and can be well applied to the light-absorbing layer of solar cells. The working principle of quantum dot solar cells is mainly the photovoltaic effect of the p-n junction. At present, high-efficiency quantum dot solar cells often achieve the purpose of carrier separation and collection through the p-n junction formed between the n-type metal oxide electron transport layer and PbS quantum dots. [0003] However, the conduction band position of the electron transport layer of metal oxides is usually slightly higher than that of PbS quantum dots, such energy band arrangement will limit the charge collection efficiency; at the ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/46H01L51/42H01L51/48B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00H10K71/12H10K85/30H10K30/10H10K2102/00Y02E10/549
Inventor 张昕彤王莹琳贾玉雯刘益春
Owner NORTHEAST NORMAL UNIVERSITY
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