Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Surface treating agent and method for p-type bismuth telluride-based material applied to thermoelectric device

A technology of surface treatment agent and bismuth telluride base crystal, which is applied in the manufacture/treatment of thermoelectric devices, thermoelectric device node lead-out materials, chemical instruments and methods, etc., can solve the problem of increasing production links and production costs, p-type tellurium Bismuth-based wafer damage, reduced yield and production efficiency and other issues, to achieve the effect of improving yield and production efficiency, improving interface bonding strength, reducing interface contact resistance and interface thermal resistance

Active Publication Date: 2021-03-09
WUHAN UNIV OF TECH
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional surface treatment method will generate a high-pressure environment during the sandblasting process and a high-temperature environment during the arc spraying process, which will easily cause damage to the p-type bismuth telluride-based wafer, reduce the yield and production efficiency, and increase the production process and Cost of production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Surface treating agent and method for p-type bismuth telluride-based material applied to thermoelectric device
  • Surface treating agent and method for p-type bismuth telluride-based material applied to thermoelectric device
  • Surface treating agent and method for p-type bismuth telluride-based material applied to thermoelectric device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] A surface treatment method for a p-type bismuth telluride-based material, comprising the following steps:

[0036] 1) A semicircular p-type bismuth telluride-based wafer with a diameter of 30 mm and a thickness of 0.3 mm is washed with acetone and degreased to remove surface pollutants, dehydrated with absolute ethanol, and dried with an OLS5000 laser scanning microscope for surface roughness testing. The surface is rough The degree Sa is 0.197 μm, then immersed in the roughening solution (the composition of the roughening solution is 10% (volume) of hydrochloric acid, 40% (volume) of hydrogen peroxide, 5% (volume) of nitric acid, and the balance is water), and the roughening temperature is 30 ℃, coarsening time 5min;

[0037] 2) The roughened p-type bismuth telluride-based wafer in step 1) is transferred to ash removal solution (the composition of the ash removal solution is 50% (volume) of hydrofluoric acid, 10% (volume) of hydrochloric acid, and 5% (volume) of nitric...

Embodiment 2

[0059] A surface treatment method for a p-type bismuth telluride-based material, comprising the following steps:

[0060] 1) A semicircular p-type bismuth telluride-based wafer with a diameter of 30 mm and a thickness of 0.3 mm was washed with acetone and degreased to remove surface pollutants, dehydrated with absolute ethanol, dried, and then observed by SEM, and then immersed in a roughening solution (roughened The composition of the chemical solution is 20% (volume) of hydrochloric acid, 30% (volume) of hydrogen peroxide, 5% (volume) of nitric acid, and the balance is water), the roughening temperature is 30 ° C, and the roughening time is 10 minutes;

[0061] 2) The roughened p-type bismuth telluride-based wafer in step 1) is transferred to ash removal solution (the composition of the ash removal solution is 40% (volume) of hydrofluoric acid, 10% (volume) of hydrochloric acid, and 5% (volume) of nitric acid ( volume), the balance is water), and the ash removal temperature ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Thicknessaaaaaaaaaa
Roughnessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a surface treating agent for a p-type bismuth telluride-based material. The surface treating agent comprises a roughening solution and an ash removal solution, wherein the roughening solution comprises the components in percentage by volume: 5-50% of hydrochloric acid, 5-40% of hydrogen peroxide, 5-10% of nitric acid and the balance being water; and the ash removal solutioncomprises the components in percentage by volume: 5-50% of hydrofluoric acid, 5-20% of hydrochloric acid, 5-10% of nitric acid and the balance being water. When the surface treating agent is used, the roughening solution and the ash removal solution are used in cooperation, a clean p-type bismuth telluride-based wafer is firstly immersed in the roughening solution and then immersed in the ash removal solution, pretreatment can be completed, and then metallization connection is directly conducted in an electroplating or chemical plating mode. According to the surface treating agent and methodfor the p-type bismuth telluride-based material, the problem that when a thin p-type bismuth telluride-based wafer is treated through traditional sand blasting-electric arc spraying, the wafer is prone to being damaged is solved, meanwhile, production links can be reduced, the yield and production efficiency are improved, and the production cost is reduced.

Description

technical field [0001] The invention relates to the field of thermoelectric devices, in particular to a surface treatment agent and method for p-type bismuth telluride-based materials applied to thermoelectric devices. Background technique [0002] With the improvement of industrial technology level, more and more electronic devices tend to be miniaturized and flexible. Thermoelectric technology, as a new type of energy technology that can realize direct mutual conversion between heat energy and electric energy, has attracted more and more attention after the current oil crisis. Thermoelectric devices have a series of advantages such as simple structure, no noise, no transmission parts and fast response speed, and can realize two functions of power generation and cooling at the same time. At present, thermoelectric devices also tend to develop in the direction of miniaturization, and are more used in laser communication, electronics industry, biomedicine, aerospace and othe...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C30B33/10C30B33/00C30B29/46C25D5/00C25D5/12C25D7/12C25D3/48C25D3/12C23C28/02C23C18/36H01L35/16H01L35/34C11D7/10C11D7/60C09K13/04
CPCC30B33/10C30B33/00C30B29/46C25D5/00C25D7/12C25D3/48C25D3/12C23C28/023C23C18/36C25D5/12C11D7/10C11D7/105C09K13/04H10N10/852H10N10/01
Inventor 唐新峰唐昊鄢永高张政楷苏贤礼
Owner WUHAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com