Ultrahigh-gain organic thin film transistor and preparation method thereof
An organic thin film and transistor technology, applied in the field of organic semiconductor electronic devices, can solve problems such as high working voltage, reduce device transconductance, limit applications, etc., and achieve the effect of low power consumption
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Embodiment 1
[0035] This example was prepared based on single layer 2,9-diylthyl naphthol [2,3-b: 2 ', 3'-f] thiophene [3,2-b] thiophene molecular film transistor And perform performance testing.
[0036] The preparation process is as follows:
[0037] 1) After cleaning the silicon substrate, place the atomic layer to deposit the cavity, vacuum, temperature rise to 150 ° C, maintain 60 min, tetra (dimethylamine) and tetra (dimethylamine) zirconium As a metal source, water is a source of oxidation, a source of hafnium, a zirconium source, and a source of a source of 200 ms, 35 ms, and 30 ms, respectively, and the cleaning time between the two pulses is 30s. The procedure for growing a ruthenium zirconium oxygen is, first zirconium source pulse, then a water source pulse, which is a ruthenium pulse, and finally a water source pulse, which is a growth cycle. The number of cycles is set, for example, 100 cycles are set, starting to grow the ruthenium oxygen film, with a thickness of about 22 nm. A...
Embodiment 2
[0044] In this embodiment, the ultra-high gain organic thin film transistor based on the pentadenzene molecule film is prepared, and performs performance testing.
[0045] The preparation process is as follows:
[0046] 1) After cleaning the silicon substrate, place the atomic layer to deposit the cavity, vacuum, temperature rise to 150 ° C, maintain 60 min, tetra (dimethylamine) and tetra (dimethylamine) zirconium As a metal source, water is a source of oxidation, a source of hafnium, a zirconium source, and a source of a source of 200 ms, 35 ms, and 30 ms, respectively, and the cleaning time between the two pulses is 30s. The procedure for growing a ruthenium zirconium oxygen is, first zirconium source pulse, then a water source pulse, which is a ruthenium pulse, and finally a water source pulse, which is a growth cycle. The number of cycles is set, for example, 100 cycles are set, starting to grow the ruthenium oxygen film, with a thickness of about 22 nm. After the zirconium o...
Embodiment 3
[0052] The present embodiment prepares an ultra high gain organic thin film transistor on a flexible substrate, and performs performance testing.
[0053] The preparation process is as follows:
[0054] 1) A polyimide film is prepared as a flexible substrate on a silicon substrate. First, the polyimide solution (AA-49, Kaneka) is rotated on the silica / silicon substrate, and the rotational speed is 1500 rpm, and the time is 45 s. Then, 350 ° C was baked for 1 h, and the preparation process was completed in the glove box of the nitrogen atmosphere. Then, the gate metal is prepared by electron beam steaming. Gold metal is 10 nm titanium and 10 nm.
[0055] 2) Taking an atomic layer deposition technique, a ruthenium oxygen / alumina as a dielectric layer is grown on the substrate. The substrate is placed in an atomic layer deposition cavity, and the cavity is vacuum, warmed to 150 ° C, after 60 min, tetra (dimethylamine) hafnium and tetra (dimethylamine) zirconium as a metal source,...
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