Manufacturing method of aluminum silicon target

Abstract

The invention relates to a method for manufacturing an aluminum-silicon target, which includes the steps of providing AlSi ingots, and the elongating step. The elongating step adopts a cold drawing operation, and the forging ratio in the cold drawing operation is 1≤X1<2; a thickening step , the forging ratio is controlled to be 2≤X2<3, and cold heading is used for one pier; in the intermediate heat treatment step, the product is kept within the first preset temperature range, and after the first preset time of heat preservation, it is quickly placed in cold water; In the second pier step, the forging ratio is controlled to be 2≤X3<3, and the second pier is also used for cold heading; the preheating treatment step; the rolling step, the product is rolled for multiple passes, and with the increase of the rolling pass , the reduction is reduced; the annealing heat treatment process step is within the annealing temperature range, holding the heat for a third time, and performing water cooling treatment to form the final target product. The present invention reduces the precipitation of Si element by rationally controlling the forging ratio and adopting water cooling as the cooling method, so as to ensure the microstructure and processing performance of the target material.

Description

technical field [0001] The invention relates to a method for manufacturing an aluminum-silicon target. Background technique [0002] Because aluminum has the characteristics of low resistivity (2.7uΩ at room temperature), easy deposition and etching, and mature technology, it is mainly used as an interconnect material and widely used in electronic information fields such as integrated circuits, discrete devices, and new displays. However, in the pure aluminum process, problems such as aluminum spikes, stress migration (SM) and electromigration (EM) occur due to the solid-state mutual dissolution of aluminum and silicon, which eventually lead to device failure and reduced yield. In the early days, in order to solve the above problems, Ta, Ti, Mo and other barrier films were prepared on the outer layer of the aluminum film, so that the aluminum film did not directly contact the silicon substrate, but the cost of materials such as Ta was high. With the advancement of science a...

AI Technical Summary

Problems solved by technology

If the forging ratio is too large, as the forging ratio increases, obvious fibrous structures will be formed, causing the plasticity index of transverse mechanical properties to drop sharply, resulting in forging anisotropy, cracking, shrinkage and other defects. It is easy to nucleate and grow at the defect, form a precipitate, become a hard point, reduce the processing performance, and finally have a bad influence on the microstructure and processing performance of the target

If the forging ratio is too small, the coarse grains of the original ingot cannot be completely broken, which will lead to the coarse microstructure of the final product, and the grain size exceeds the specification, which will affect the subsequent film formation quality

Images