Photothermoelectric detector based on platinum diselenide bismuth telluride and preparation method thereof

A bismuth telluride and photothermoelectric technology, which is used in the manufacture/processing of thermoelectric devices, electrical radiation detectors, and lead wire materials for thermoelectric devices, can solve the problems of difficulty in taking into account broadband and high responsivity. The effect of mild conditions and simple device structure

Active Publication Date: 2021-03-26
南京科耐激光技术有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The invention provides a photothermoelectric detector based on platinum diselenide bismuth telluride and its preparation method, whi

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  • Photothermoelectric detector based on platinum diselenide bismuth telluride and preparation method thereof
  • Photothermoelectric detector based on platinum diselenide bismuth telluride and preparation method thereof
  • Photothermoelectric detector based on platinum diselenide bismuth telluride and preparation method thereof

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Embodiment 1

[0050] Such as figure 1 Shown is an implementation case of the photopyroelectric detector based on platinum diselenide bismuth telluride and its preparation method in the present invention. Such as figure 2 As shown, it is prepared by the following method:

[0051] 1) Substrate preparation: Clean the Si substrate with ultrasonic vibrations such as acetone and hydrogen peroxide, and dry it with nitrogen for later use;

[0052] 2) Deposit a layer of thermal insulation layer on the substrate, the optional material is SiO 2 , thickness 200nm;

[0053] 3) Deposition of Bi 2 Te 3Thin film: preheat the clean substrate obtained in the above steps to 350-400 degrees Celsius, and deposit a layer of Bi on the substrate by magnetron sputtering 2 Te 3 , the sputtering parameters are: air pressure, 4.0-4.5Pa, 1 hour room temperature sputtering time, sputtering power 10-20W, sample target thickness: 50 nm; (Note: a mask plate can be preset on the substrate to deposit the cycle Sexua...

Embodiment 2

[0076] Such as figure 1 Shown is an implementation case of the photopyroelectric detector based on platinum diselenide bismuth telluride and its preparation method in the present invention. Such as figure 2 As shown, it is prepared by the following method:

[0077] 1) Substrate preparation: Clean the polyimide substrate with deionized water, absolute ethanol and other ultrasonic vibrations, and dry it with nitrogen for later use;

[0078] 2) Deposit a layer of thermal insulation layer on the substrate, the optional material is SiN, with a thickness of 300nm;

[0079] 3) Deposition of Bi 2 Te 3 Thin film: preheat the clean substrate obtained in the above steps to 350-400 degrees Celsius, and deposit a layer of Bi on the substrate by magnetron sputtering 2 Te 3 , the sputtering parameters are: air pressure, 4.0-4.5Pa, 1 hour room temperature sputtering time, sputtering power 10-20W, sample target thickness: 200 nm; (Note: a mask can be preset on the substrate to deposit t...

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Abstract

The invention discloses a photo-thermoelectric detector and a preparation method thereof, and relates to the field of photo-thermoelectric detectors based on platinum diselenide bismuth telluride, thephoto-thermoelectric detector comprises a bismuth telluride thermoelectric conversion layer and a photo-thermal conversion layer arranged on the thermoelectric conversion layer, and the photo-thermalconversion layer is made of platinum diselenide, The area of the photo-thermal conversion layer is smaller than that of the thermoelectric conversion layer, a first electrode is arranged on the photo-thermal conversion layer, a second electrode is arranged on the thermoelectric conversion layer, the photo-thermal conversion layer forms a temperature gradient with the thermoelectric conversion layer after being heated by illumination, and a potential difference is generated along the thickness direction. The problem that an existing semiconductor optical detector is difficult to consider bothbroadband and high responsivity is solved.

Description

technical field [0001] The invention relates to a photopyroelectric detector and a preparation method thereof, in particular to a photopyroelectric detector based on platinum diselenide bismuth telluride. Background technique [0002] In the field of optoelectronic information, the utilization of optical information is one of the most important components, and photodetectors are the basis for utilizing optoelectronic information. Optical detector is a device that converts optical signal into electrical signal output. It has a very wide range of applications in national defense, military and civilian fields, including photometry, optical communication, infrared imaging, remote sensing, environmental monitoring, spectral analysis, and astronomical detection. Wait. Traditional silicon-based, germanium-based, mercury cadmium telluride-based and other detectors face insurmountable problems such as large device size and limited integration. With the increasingly higher requireme...

Claims

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Application Information

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IPC IPC(8): H01L35/16H01L35/30H01L35/32H01L35/34G01J5/20
CPCG01J5/20G01J2005/204H10N10/852H10N10/13H10N10/01H10N10/17
Inventor 鲍桥梁吴琳
Owner 南京科耐激光技术有限公司
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