Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Photothermoelectric detector based on platinum diselenide bismuth telluride and preparation method thereof

A bismuth telluride and photothermoelectric technology, which is used in the manufacture/processing of thermoelectric devices, electrical radiation detectors, and lead wire materials for thermoelectric devices, can solve the problems of difficulty in taking into account broadband and high responsivity. The effect of mild conditions and simple device structure

Active Publication Date: 2021-03-26
南京科耐激光技术有限公司
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The invention provides a photothermoelectric detector based on platinum diselenide bismuth telluride and its preparation method, which solves the problem that the existing semiconductor photodetectors are difficult to take into account the wide band and high responsivity

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photothermoelectric detector based on platinum diselenide bismuth telluride and preparation method thereof
  • Photothermoelectric detector based on platinum diselenide bismuth telluride and preparation method thereof
  • Photothermoelectric detector based on platinum diselenide bismuth telluride and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] Such as figure 1 Shown is an implementation case of the photopyroelectric detector based on platinum diselenide bismuth telluride and its preparation method in the present invention. Such as figure 2 As shown, it is prepared by the following method:

[0051] 1) Substrate preparation: Clean the Si substrate with ultrasonic vibrations such as acetone and hydrogen peroxide, and dry it with nitrogen for later use;

[0052] 2) Deposit a layer of thermal insulation layer on the substrate, the optional material is SiO 2 , thickness 200nm;

[0053] 3) Deposition of Bi 2 Te 3Thin film: preheat the clean substrate obtained in the above steps to 350-400 degrees Celsius, and deposit a layer of Bi on the substrate by magnetron sputtering 2 Te 3 , the sputtering parameters are: air pressure, 4.0-4.5Pa, 1 hour room temperature sputtering time, sputtering power 10-20W, sample target thickness: 50 nm; (Note: a mask plate can be preset on the substrate to deposit the cycle Sexua...

Embodiment 2

[0076] Such as figure 1 Shown is an implementation case of the photopyroelectric detector based on platinum diselenide bismuth telluride and its preparation method in the present invention. Such as figure 2 As shown, it is prepared by the following method:

[0077] 1) Substrate preparation: Clean the polyimide substrate with deionized water, absolute ethanol and other ultrasonic vibrations, and dry it with nitrogen for later use;

[0078] 2) Deposit a layer of thermal insulation layer on the substrate, the optional material is SiN, with a thickness of 300nm;

[0079] 3) Deposition of Bi 2 Te 3 Thin film: preheat the clean substrate obtained in the above steps to 350-400 degrees Celsius, and deposit a layer of Bi on the substrate by magnetron sputtering 2 Te 3 , the sputtering parameters are: air pressure, 4.0-4.5Pa, 1 hour room temperature sputtering time, sputtering power 10-20W, sample target thickness: 200 nm; (Note: a mask can be preset on the substrate to deposit t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a photo-thermoelectric detector and a preparation method thereof, and relates to the field of photo-thermoelectric detectors based on platinum diselenide bismuth telluride, thephoto-thermoelectric detector comprises a bismuth telluride thermoelectric conversion layer and a photo-thermal conversion layer arranged on the thermoelectric conversion layer, and the photo-thermalconversion layer is made of platinum diselenide, The area of the photo-thermal conversion layer is smaller than that of the thermoelectric conversion layer, a first electrode is arranged on the photo-thermal conversion layer, a second electrode is arranged on the thermoelectric conversion layer, the photo-thermal conversion layer forms a temperature gradient with the thermoelectric conversion layer after being heated by illumination, and a potential difference is generated along the thickness direction. The problem that an existing semiconductor optical detector is difficult to consider bothbroadband and high responsivity is solved.

Description

technical field [0001] The invention relates to a photopyroelectric detector and a preparation method thereof, in particular to a photopyroelectric detector based on platinum diselenide bismuth telluride. Background technique [0002] In the field of optoelectronic information, the utilization of optical information is one of the most important components, and photodetectors are the basis for utilizing optoelectronic information. Optical detector is a device that converts optical signal into electrical signal output. It has a very wide range of applications in national defense, military and civilian fields, including photometry, optical communication, infrared imaging, remote sensing, environmental monitoring, spectral analysis, and astronomical detection. Wait. Traditional silicon-based, germanium-based, mercury cadmium telluride-based and other detectors face insurmountable problems such as large device size and limited integration. With the increasingly higher requireme...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L35/16H01L35/30H01L35/32H01L35/34G01J5/20
CPCG01J5/20G01J2005/204H10N10/852H10N10/13H10N10/01H10N10/17
Inventor 鲍桥梁吴琳
Owner 南京科耐激光技术有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com