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High-hardness high-modulus tantalum-hafnium-carbon ternary ceramic carbide coatings and production method thereof

A ternary ceramic and carbide technology, applied in coating, metal material coating process, ion implantation plating, etc., can solve the problem of difficult to achieve fine control of composition and structure, low chemical vapor deposition rate, and easy introduction of free carbon impurities and oxide impurities, to achieve the effect of good coverage and bonding, excellent physical and mechanical properties, and controllable coating composition and structure

Inactive Publication Date: 2021-04-13
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, the preparation process of Ta-Hf-C ternary ceramic carbide mainly focuses on powder synthesis and bulk material preparation. For example, ceramic powder is prepared by self-propagating high-temperature synthesis, precursor calcination or carbon thermal reduction. Hot pressing sintering or spark plasma sintering to prepare bulk materials, etc., the main problems are complex process flow, high sintering temperature, low densification degree, easy introduction of free carbon impurities and oxide impurities, etc.
The preparation process of Ta-Hf-C ternary ceramic carbide coating mainly includes chemical vapor deposition and plasma spraying. The chemical vapor deposition rate is low, the preparation cycle is long, the process is complicated, and the coating stress is high and easy to crack. The existing problems of such methods are high requirements on the quality of ceramic powder, low coating density, and difficulty in finely controlling the composition and structure.

Method used

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  • High-hardness high-modulus tantalum-hafnium-carbon ternary ceramic carbide coatings and production method thereof
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Embodiment 1

[0023] In this embodiment, the nominal composition of the tantalum-hafnium-carbon ternary ceramic carbide coating is (Ta 0.66 f 0.34 )C:

[0024] Using tantalum, hafnium and carbon three pure elements (purity 99.9%) target multi-target co-sputtering: firstly, the aluminum oxide substrate is cleaned and dried in ethanol, and placed in a vacuum chamber with a resistance heating device and a baffle On the sample stage, the vacuum degree of the background is pumped to 3×10 -5 Pa; then feed high-purity argon gas with a purity of 99.999% into the vacuum chamber to make the air pressure reach 0.4 Pa, heat the sample to 400°C and keep it for 30 minutes to make the surface temperature of the sample uniform; Apply 300 volts, 240 volts, and 400 volts of DC negative bias to the sputtering target to make the target arc. After sputtering and cleaning for 10 minutes, remove the sample stage baffle to start deposition. During the deposition process, the potential of the sample stage is grou...

Embodiment 2

[0027] In this embodiment, the nominal composition of the tantalum-hafnium-carbon ternary ceramic carbide coating is (Ta 0.5 f 0.5 )C:

[0028] Using tantalum, hafnium and carbon three pure elements (purity 99.9%) target multi-target co-sputtering: firstly, the aluminum oxide substrate is cleaned and dried in acetone, and placed in a vacuum chamber with a resistance heating device and a baffle On the sample stage, the vacuum degree of the background is pumped to 4×10 -5 Pa; then pass high-purity argon gas with a purity of 99.999% into the vacuum chamber to make the air pressure reach 0.4 Pa, heat the sample to 550°C and keep it for 30 minutes to make the surface temperature of the sample uniform; Apply 200 volts, 240 volts, and 400 volts of DC negative bias to the sputtering target to make the target arc. After sputtering and cleaning for 10 minutes, remove the sample stage baffle to start deposition. During the deposition process, the potential of the sample stage is ground...

Embodiment 3

[0031] In this embodiment, the nominal composition of the tantalum-hafnium-carbon ternary ceramic carbide coating is (Ta 0.40 f 0.60 )C:

[0032] Using tantalum, hafnium and carbon three pure elements (purity 99.9%) target multi-target co-sputtering: firstly, the aluminum oxide substrate is cleaned and dried in ethanol, and placed in a vacuum chamber with a resistance heating device and a baffle On the sample stage, the vacuum degree of the background is pumped to 5×10 -5Pa; then pass high-purity argon gas with a purity of 99.999% into the vacuum chamber to make the air pressure reach 0.4 Pa, heat the sample to 700°C and keep it for 30 minutes to make the surface temperature of the sample uniform; Apply 300 volts, 240 volts, and 400 volts of DC negative bias to the sputtering target to make the target arc. After sputtering and cleaning for 10 minutes, remove the sample stage baffle to start deposition. During the deposition process, the potential of the sample stage is groun...

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Abstract

The invention belongs to the technical field of surface protection, and particularly relates to high-hardness high-modulus tantalum-hafnium-carbon ternary ceramic carbide coatings and a production method thereof. The carbide coatings comprise the following elements according to atomic percents: 15%-45% of tantalum, 15%-45% of hafnium and 40%-50% of carbon. A component range, with high hardness and high elasticity moduli, in a tantalum-hafnium-carbon ternary component system is screened out through a high-modulus experiment method, and the tantalum-hafnium-carbon ternary component crystalline-state coatings are produced by adopting a combined magnetron sputtering method; and the coatings produced by means of the method have ultrahigh hardness and elasticity moduli, the indentation hardness of the coatings is larger than 25 GPa, the elasticity moduli are larger than 400 GPa, and compared with other methods, the production method has the characters that the technology is simple, no ceramic powder precursors or reaction gas is needed, the components and microscopic structures of the coatings are controllable, the coatings are dense, and the like.

Description

technical field [0001] The invention belongs to the technical field of surface protection, and in particular relates to a tantalum-hafnium-carbon ternary ceramic carbide coating with high hardness and high modulus and a preparation method thereof. Background technique [0002] Among ultra-high temperature ceramic materials, TaC and HfC, the binary compounds of metal tantalum and hafnium and carbon, have extremely high hardness and thermal stability. TaC and HfC have ultra-high melting points (3890°C and 3928°C, respectively), and are the two substances with the highest melting points among binary metal compounds. TaC and HfC have high hardness, high elastic modulus, low resistivity (42.1μΩ·cm at 25°C), excellent chemical stability, corrosion resistance, high temperature strength, high temperature corrosion resistance, and low diffusion at high temperature Coefficient and oxidation resistance for tool steels, wear parts, diffusion barriers, hypersonic vehicles (e.g. leading ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/06C23C14/35
CPCC23C14/0635C23C14/352
Inventor 张洁王京阳吕熙睿陈丽娜
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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