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Texturing method, monocrystalline silicon wafer and monocrystalline silicon solar cell

A single crystal silicon wafer, solar cell technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problem of reducing the power generation efficiency of single crystal silicon solar cells, and achieve the effect of reducing reflectivity, ensuring uniformity, and uniform distribution.

Inactive Publication Date: 2021-04-13
TAIZHOU LERRISOLAR TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The invention provides a texturing method, a monocrystalline silicon wafer and a monocrystalline silicon solar cell, aiming to solve the problem that the power generation efficiency of the monocrystalline silicon solar cell decreases after nano holes are set on the textured surface of the monocrystalline silicon wafer

Method used

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  • Texturing method, monocrystalline silicon wafer and monocrystalline silicon solar cell
  • Texturing method, monocrystalline silicon wafer and monocrystalline silicon solar cell
  • Texturing method, monocrystalline silicon wafer and monocrystalline silicon solar cell

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0103] Texturing method comprises steps SA1-SA17:

[0104] Step SA1, performing alkali texturing on the monocrystalline silicon wafer, the alkali texturing solution is a mixed solution of NaOH, additive isopropanol and deionized water, wherein, in the alkali texturing solution, the mass concentration of NaOH is 2.5%, The temperature is controlled at 82° C., and the reaction time is 8 minutes. After testing, a pyramid suede surface with a reflectivity of 10% is formed, and the average size of the pyramid height is 3 μm.

[0105] In step SA2, use deionized water to wash the single crystal silicon wafer twice to wash away the alkali texturing solution and organic impurities on the surface of the single crystal silicon wafer.

[0106] Step SA3, using HNO 3 solution for the first pickling, in the first pickling solution, HNO 3 The mass concentration is 5%, the temperature is controlled at room temperature, and the pickling time is 200s.

[0107] Step SA4, using deionized water ...

Embodiment 2

[0120] Texturing method comprises steps SB1-SB17:

[0121] Step SB1, step SB2, step SB3, and step SB4 are the same as the aforementioned step SA1, step SA2, step SA3, and step SA4 respectively, and can refer to corresponding records of the aforementioned step SA1, step SA2, step SA3, and step SA4 respectively, for To avoid repetition, I won't repeat them here.

[0122] Step SB5, performing metal ion-assisted texturing on the monocrystalline silicon wafer after the first pickling by using a texturing solution, and making nano-holes on the pyramid textured surface. Texturing solution is HF, H 2 o 2 , a mixed solution containing silver ions, wherein, in the texturing solution, the mass concentration of HF is 5%, and the H 2 o 2 The mass concentration is 0.5%, the silver ion concentration is 0.0008mol / L, the temperature is controlled at 33°C, and the reaction time is 300s.

[0123] Step SB6, step SB7, step SB8, step SB9, and step SB10 are respectively the same as the aforemen...

Embodiment 3

[0127] Texturing method comprises steps SC1-SC17:

[0128] Step SC1, step SC2, step SC3, and step SC4 are respectively the same as the aforementioned step SA1, step SA2, step SA3, and step SA4, and can refer to corresponding records of the aforementioned step SA1, step SA2, step SA3, and step SA4 respectively, for To avoid repetition, I won't repeat them here.

[0129] In step SC5, metal ion-assisted texturing is performed on the monocrystalline silicon wafer after the first pickling by using a texturing solution, and nano-holes are formed on the pyramid textured surface. Texturing solution is HF, H 2 o 2 , a mixed solution containing silver ions, wherein, in the texturing solution, the mass concentration of HF is 10%, and the H 2 o 2 The mass concentration is 1.5%, the silver ion concentration is 0.0008mol / L, the temperature is controlled at 33°C, and the reaction time is 300s.

[0130] Step SC6, step SC7, step SC8, step SC9, and step SC10 are respectively the same as th...

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Abstract

The invention provides a texturing method, a monocrystalline silicon wafer and a monocrystalline silicon solar cell, and relates to the technical field of photovoltaics. The method comprises the following steps: performing alkali texturing on a monocrystalline silicon wafer; pickling the monocrystalline silicon wafer subjected to alkali texturing for the first time; carrying out metal ion-assisted texturing on the monocrystalline silicon wafer subjected to primary acid pickling by adopting a texturing solution so as to form nano holes in a pyramid textured surface, wherein the content of metal ions in the texturing solution is 0.0001 mol / L to 0.001 mol / L; carrying out first demetalization treatment on the monocrystalline silicon wafer subjected to metal ion assisted texturing; carrying out secondary acid pickling on the monocrystalline silicon wafer subjected to primary demetalization; modifying the monocrystalline silicon wafer subjected to the secondary acid pickling by adopting a modification solution so as to ream the nano holes; and carrying out secondary demetalization on the reamed monocrystalline silicon wafer in an ozone-containing water bubbling mode. The metal ion concentration is low, the formed nano holes are small in size, and the reflectivity is low. Bubbling generates vibration, ozone and metal ions are subjected to a chemical reaction, so that few metal ions are left in the holes, few metal ions are compounded, and the power generation efficiency is high.

Description

technical field [0001] The invention relates to the field of photovoltaic technology, in particular to a texturing method, a monocrystalline silicon wafer and a monocrystalline silicon solar cell. Background technique [0002] Texturing the monocrystalline silicon wafer and setting nano-holes on the textured surface can further reduce surface reflection and increase the utilization rate of incident light. [0003] However, in the prior art, the power generation efficiency of the monocrystalline silicon solar cell will decrease after the nanoholes are provided on the pyramid textured surface of the monocrystalline silicon wafer. Contents of the invention [0004] The invention provides a texturing method, a single crystal silicon chip and a single crystal silicon solar cell, aiming to solve the problem that the power generation efficiency of the single crystal silicon solar cell decreases after nano holes are set on the textured surface of the single crystal silicon chip. ...

Claims

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Application Information

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IPC IPC(8): H01L31/0236H01L31/0216H01L31/028H01L31/042H01L31/18
CPCH01L31/02363H01L31/02168H01L31/028H01L31/042H01L31/1804Y02E10/547Y02P70/50
Inventor 丁超童洪波李华刘继宇
Owner TAIZHOU LERRISOLAR TECH CO LTD
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