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Preparation method of laminated antireflection film of solar cell

A technology of solar cells and anti-reflection coatings, applied in circuits, electrical components, photovoltaic power generation, etc., can solve problems such as poor passivation quality of silicon nitride films

Active Publication Date: 2021-04-27
江苏润阳世纪光伏科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the technical problem of poor passivation quality of silicon nitride thin films on solar cells, a method for preparing a laminated anti-reflection film for solar cells is provided

Method used

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  • Preparation method of laminated antireflection film of solar cell
  • Preparation method of laminated antireflection film of solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A method for preparing a laminated anti-reflection film for a solar cell. The structure of the laminated anti-reflection film in this embodiment is to sequentially deposit a silicon nitride oxide thin film layer and a silicon nitride thin film layer on the back surface of a substrate by plasma chemical vapor deposition. It is a structure of double-layered anti-reflection film, the comprehensive refractive index of the whole film layer is 2.10, and the comprehensive film thickness of the whole film layer is 160nm.

[0031] The preparation method of the silicon oxynitride thin film and the silicon nitride thin film double-layer laminated anti-reflection film of this embodiment comprises the following steps:

[0032] (1) Deposit a layer of silicon oxynitride film on the back surface of silicon wafer by plasma chemical vapor deposition method through PECVD tubular plasma deposition furnace, the refractive index of the silicon oxynitride film is 2.10-2.15, and the film thickn...

Embodiment 2

[0038] A method for preparing a laminated anti-reflection film for a solar cell. The structure of the laminated anti-reflection film in this embodiment is to sequentially deposit a silicon nitride oxide film layer and a three-layer silicon nitride film on the back surface of a substrate by plasma chemical vapor deposition , which is a four-layer antireflection film structure, the comprehensive refractive index of the whole film layer is 2.08-2.10, and the comprehensive film thickness of the whole film layer is 180nm-210nm.

[0039] The preparation method of the four-layer laminated anti-reflection film of the present embodiment comprises the following steps:

[0040] (1) Deposit a layer of silicon oxynitride film on the back surface of silicon wafer by plasma chemical vapor deposition method through PECVD tubular plasma deposition furnace, the refractive index of the silicon oxynitride film is 2.25-2.30, and the film thickness is 20nm- 30nm;

[0041] The refractive index of t...

Embodiment 3

[0048] The minority carrier lifetime test was carried out on the laminated anti-reflection coatings prepared on the single crystal silicon in the above examples and comparative examples. The light irradiation wavelength in the minority carrier lifetime test was 1064nm. The results are shown in Table 1.

[0049] The minority carrier lifetime of the stacked anti-reflection coating of the embodiment and the comparative example in table 1

[0050]

[0051]

[0052] It can be seen from Table 1 that the minority carrier lifetime of the double-layer laminated anti-reflection film of the silicon oxynitride film and the silicon nitride film of embodiment 1 is increased by about 60 μ s on average compared with the comparative example; the minority carrier lifetime of the four-layer laminated anti-reflection film of embodiment 2 is shorter than The average increase of about 50μs in the comparison example.

[0053] The electrical properties and efficiency were tested after the solar...

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Abstract

The invention discloses a preparation method of a laminated antireflection film of a solar cell. The preparation method comprises the following steps of (1) depositing on the back surface of a substrate by adopting a plasma chemical vapor deposition method to form a silicon oxynitride film; (2) depositing on the surface of the silicon oxynitride film by adopting a plasma chemical vapor deposition method to form a silicon nitride film; and finally, sequentially obtaining the laminated antireflection film of the silicon oxynitride film and the silicon nitride film on the back surface of the substrate. According to the second scheme, (1) a plasma chemical vapor deposition method is adopted to deposit and form a silicon oxynitride film on the back surface of the substrate; (2) sequential deposition on the surface of the silicon oxynitride thin film is carried out by adopting a plasma chemical vapor deposition method to form three layers of silicon nitride thin films of which the refractive indexes are reduced in a gradient manner; and finally, a laminated antireflection film of a silicon oxynitride film and a three-layer silicon nitride film of which the refractive index gradient is reduced on the back surface of the substrate are sequentially obtained. The laminated antireflection film provided by the invention can reduce the electrical recombination of the back surface and improve efficiency of the solar cell.

Description

technical field [0001] The invention relates to the technical field of substrate coating, in particular to a method for preparing a laminated anti-reflection film of a solar cell. Background technique [0002] Photoelectric utilization of solar energy, ie, photovoltaic efficiency, is the fastest growing and most dynamic research field in recent years. For this reason, Renlian has developed and developed solar cells. Materials for making solar cells can be divided into elemental semiconductor materials, such as silicon, and compound semiconductor materials, such as gallium arsenide and cadmium antimonide, according to their elemental composition. Among them, silicon material has become the most ideal solar cell material because of its moderate bandgap width, good photoelectric conversion efficiency, no pollution to the environment, stable performance, convenient industrial production, and abundant resources. Silicon-based solar cells can be further divided into crystalline s...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/0216
CPCH01L31/1804H01L31/02167Y02P70/50Y02E10/547
Inventor 李学峰
Owner 江苏润阳世纪光伏科技有限公司
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