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A kind of preparation method of laminated anti-reflection film of solar cell

A solar cell and anti-reflection film technology, which is applied in circuits, electrical components, photovoltaic power generation, etc., can solve problems such as poor passivation quality of silicon nitride films, improve minority carrier life and solar cell efficiency, improve stress distribution, Increases the effect of internal optical reflections

Active Publication Date: 2022-07-08
JIANGSU RUNERGY CENTURY PHOTOVOLTAIC TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the technical problem of poor passivation quality of silicon nitride thin films on solar cells, a method for preparing a laminated anti-reflection film for solar cells is provided

Method used

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  • A kind of preparation method of laminated anti-reflection film of solar cell
  • A kind of preparation method of laminated anti-reflection film of solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A method for preparing a laminated anti-reflection film for a solar cell. The structure of the laminated anti-reflection film in this embodiment is to sequentially deposit a silicon oxynitride thin film layer and a silicon nitride thin film layer on the back surface of a substrate by means of plasma chemical vapor deposition. It is a structure of a two-layer laminated anti-reflection film, the comprehensive refractive index of the whole film layer is 2.10, and the comprehensive film thickness of the whole film layer is 160 nm.

[0031] The preparation method of the silicon oxynitride film and the silicon nitride film double-layered anti-reflection film of the present embodiment includes the following steps:

[0032] (1) A layer of silicon oxynitride film is deposited on the back surface of the silicon wafer by plasma chemical vapor deposition in a PECVD tubular plasma precipitation furnace. The refractive index of the silicon oxynitride film is 2.10-2.15 and the film thi...

Embodiment 2

[0038] A method for preparing a laminated anti-reflection film for a solar cell. The structure of the laminated anti-reflection film in this embodiment is to sequentially deposit a silicon oxynitride thin film layer and a three-layer silicon nitride thin film on the back surface of a substrate by a plasma chemical vapor deposition method. , is a four-layer laminated anti-reflection film structure, the overall refractive index of the overall film layer is 2.08-2.10, and the overall film thickness of the overall film layer is 180nm-210nm.

[0039] The preparation method of the four-layer laminated anti-reflection film of the present embodiment includes the following steps:

[0040] (1) A layer of silicon oxynitride film is deposited on the back surface of the silicon wafer by plasma chemical vapor deposition in a PECVD tubular plasma precipitation furnace. The refractive index of the silicon oxynitride film is 2.25-2.30 and the film thickness is 20nm- 30nm;

[0041] The refract...

Embodiment 3

[0048] Minority carrier lifetime tests were performed on the laminated antireflection films prepared on single crystal silicon in the above examples and comparative examples. The light irradiation wavelength in the minority carrier lifetime tests was 1064 nm. The results are shown in Table 1.

[0049] Table 1 Minority carrier lifetimes of the laminated antireflection films of Examples and Comparative Examples

[0050]

[0051]

[0052] It can be seen from Table 1 that the minority carrier lifetime of the silicon oxynitride film of Example 1 and the double-layered anti-reflection film of silicon nitride film is increased by about 60 μs on average compared with the comparative example; The comparative example improves on average by about 50 μs.

[0053] The electrical properties and efficiency of the solar cells were tested on the laminated anti-reflection films prepared on the crystalline silicon cells in the above examples and comparative examples. The results are shown ...

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Abstract

A method for preparing a laminated anti-reflection film for a solar cell, the first scheme is: (1) using plasma chemical vapor deposition to form a silicon oxynitride film on the back surface of a substrate; (2) using plasma chemical vapor deposition A silicon nitride film is deposited on the surface of the silicon oxynitride film by the method; finally, a laminated anti-reflection film of the silicon oxynitride film and the silicon nitride film is sequentially obtained on the back surface of the substrate. The second solution is: (1) using plasma chemical vapor deposition to form a silicon oxynitride film on the back surface of the substrate; (2) using plasma chemical vapor deposition to sequentially deposit and form a silicon oxynitride film on the surface of the substrate The three-layer silicon nitride film whose refractive index gradient decreases; finally, the laminated anti-reflection film of the silicon oxynitride film and the three-layer silicon nitride film whose refractive index gradient decreases is sequentially obtained on the back surface of the substrate. The laminated anti-reflection film of the present invention can reduce the electrical recombination on the back surface and improve the efficiency of the solar cell.

Description

technical field [0001] The invention relates to the technical field of substrate coating, in particular to a method for preparing a laminated anti-reflection film of a solar cell. Background technique [0002] Photoelectric utilization of solar energy, that is, photovoltaic efficiency, is the fastest growing and most dynamic research field in recent years. Materials for making solar cells can be divided into elemental semiconductor materials, such as silicon, and compound semiconductor materials, such as gallium arsenide and cadmium antimonide, according to their elemental composition. Among them, silicon material has become the most ideal solar cell material because of its moderate band gap, good photoelectric conversion efficiency, no pollution to the environment, stable performance, easy industrial production, and abundant resources. Silicon-based solar cells can be further divided into crystalline silicon solar cells and amorphous silicon solar cells. Among them, cryst...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0216
CPCH01L31/1804H01L31/02167Y02P70/50Y02E10/547
Inventor 李学峰
Owner JIANGSU RUNERGY CENTURY PHOTOVOLTAIC TECH CO LTD
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