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Preparation and Application of a Novel Hole Transport Material Based on n-p=x Resonant Structure

A technology of hole-transporting materials and resonance structures, which is applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, and compounds of Group 5/15 elements of the periodic table, to achieve high yield, simple synthesis, and good thermal stability Effect

Active Publication Date: 2021-06-22
NANJING UNIV OF POSTS & TELECOMM
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

After that, the second generation of inorganic thin-film solar cells appeared. This kind of battery uses copper indium gallium selenide as the material. Although the raw material consumption is relatively small and the efficiency is high, the inorganic materials need to be calcined at high temperature before they can be used.

Method used

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  • Preparation and Application of a Novel Hole Transport Material Based on n-p=x Resonant Structure
  • Preparation and Application of a Novel Hole Transport Material Based on n-p=x Resonant Structure
  • Preparation and Application of a Novel Hole Transport Material Based on n-p=x Resonant Structure

Examples

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Embodiment 1

[0048] Synthesis of photoelectric functional material CzPFO and its application in perovskite solar cells

[0049] 1) Weigh the drug, put 2,2'-dibromobiphenyl (1.25 g) into a 50 mL double-necked round-bottom flask, add a stirring magnet, and use a double-row tube to evacuate and repeatedly blow in argon gas 3 times, Finally fill the balloon. Set up the apparatus so that it is under argon protection. Cool the flask in an ice bath for 10 min, turn on the magnetic stirrer, and slowly add 25 mL of newly distilled tetrahydrofuran (THF) solvent dropwise with a syringe, inject it into the reactor, shake it well, and the drug is fully dissolved. Add dry ice around the bottom of the double-necked round-bottom flask to keep the reaction system at -78 °C, slowly drop 6.25 mL of n-butyllithium reagent into the above-mentioned vacuum-tight flask, react for 1 h, and change from transparent to milky white. Use a syringe to quickly inject 2.0 mL of phosphorus chloride into a 50 mL single-ne...

Embodiment 2

[0061] Synthesis of photoelectric functional material CzPFO and its application in perovskite solar cells

[0062] 1) Weigh the drug, put 2,2'-dibromobiphenyl (1.25 g) into a 50 mL double-necked round-bottom flask, add a stirring magnet, and use a double-row tube to evacuate and repeatedly blow in argon gas 3 times, Finally fill the balloon. Set up the apparatus so that it is under argon protection. Cool the flask in an ice bath for 10 min, turn on the magnetic stirrer, and slowly add 25 mL of newly distilled tetrahydrofuran (THF) solvent dropwise with a syringe, inject it into the reactor, shake it well, and the drug is fully dissolved. Add dry ice around the bottom of the double-necked round-bottom flask to keep the reaction system at -78 °C, slowly drop 6.25 mL of n-butyllithium reagent into the above-mentioned vacuum-tight flask, react for 1 h, and change from transparent to milky white. Use a syringe to quickly inject 2.0 mL of phosphorus chloride into a 50 mL single-ne...

Embodiment 3

[0074] Synthesis of Photoelectric Functional Material PHFPFO

[0075] 1) Weigh the drug, put 2,2'-dibromobiphenyl (1.25 g) into a 50 mL double-necked round-bottom flask, add a stirring magnet, and use a double-row tube to evacuate and repeatedly blow in argon gas 3 times, Finally fill the balloon. Set up the apparatus so that it is under argon protection. Cool the flask in an ice bath for 10 min, turn on the magnetic stirrer, and slowly add 25 mL of newly distilled tetrahydrofuran (THF) solvent dropwise with a syringe, inject it into the reactor, shake it well, and the drug is fully dissolved. Add dry ice around the bottom of the double-necked round-bottom flask to keep the reaction system at -78°C, slowly drop 6.25 mL of n-butyllithium reagent into the above-mentioned vacuum-sealed flask, react for 1 h, and change from transparent to milky white. Use a syringe to quickly inject 2.0 mL of phosphorus chloride into a 50 mL single-necked bottle that has been evacuated and fille...

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Abstract

The invention discloses the preparation and application of a novel hole transport material based on the N-P=X resonance structure, which relates to the technical field of organic photoelectric materials, and its characteristic functional groups can selectively regulate the properties of semiconductor materials, and the resonance structure has a good balance carrier transport. Hole transport layer materials that can be used for synthesis. The efficiency of the perovskite cell using the new hole transport layer can reach a maximum of 21.7%, the open circuit voltage can reach 1.16 V, and the fill factor can reach 0.81. By designing and synthesizing new optoelectronic materials and adjusting the HOMO energy level to match the HOMO energy level of the perovskite active layer, the effect of increasing the open circuit voltage of the device can be achieved, thereby improving the photoelectric conversion efficiency of the device. At the same time, due to the coordination between the characteristic functional groups and the lead in the perovskite, the stability of the perovskite material is improved, and the device stability is significantly improved.

Description

technical field [0001] The invention relates to the technical field of organic photoelectric materials, in particular to the preparation of a novel hole transport material based on an N-P=X resonance structure and its application in perovskite solar cells. Background technique [0002] The current solar cells have gradually developed in various forms with the passage of time, and this development process can usually be divided into several time stages. First of all, the first generation of solar cells is basically based on monocrystalline silicon, and polycrystalline silicon and amorphous silicon are gradually developed on this basis. It is very mature, but the high price and complicated preparation of monocrystalline silicon still restrict its development. After that, the second generation of inorganic thin-film solar cells appeared. This kind of battery uses copper indium gallium selenide as the material. Although the raw material consumption is relatively small and the e...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C07F9/6568H01L51/42H01L51/46H01L51/48
CPCC07F9/65685H10K71/12H10K85/649H10K85/657H10K85/6572H10K30/00Y02E10/549
Inventor 陶冶项渊陈润锋许利刚吕文轩
Owner NANJING UNIV OF POSTS & TELECOMM