Phosphorus-free two-component cleaning agent as well as preparation method and application thereof

Abstract

The invention provides a phosphorus-free two-component cleaning agent as well as a preparation method and an application thereof. The phosphorus-free two-component cleaning agent comprises a component A and a component B, wherein based on the total mass of the component A being 100%, the component A comprises the following components: 1-3% of potassium hydroxide; 2-5% of a surfactant; 2-5% of a cosolvent; 1-3% of an organic base; 0.5-1% of sodium gluconate; 0.5-1% of an amino polycarboxylic acid chelating agent; and the balance of water. Based on the total mass of the component B being 100%, the component B comprises the following components: 3-20% of potassium hydroxide; 1-3% of a cosolvent; and the balance of water. The double-component cleaning agent provided by the invention has the cleaning capability equivalent to that of a commercially available cleaning agent, and has a relatively good removal effect on metal impurities.

Description

technical field [0001] The invention belongs to the field of cleaning agents, and relates to a phosphorus-free two-component cleaning agent and its preparation method and application, in particular to a phosphorus-free two-component silicon wafer cleaning agent and its preparation method and application. Background technique [0002] Diamond wire cutting crystalline silicon is a new silicon wafer processing technology developed in recent years. Compared with sand wire cutting, it has a significant cost advantage, mainly in terms of high cutting productivity, less environmental pollution, and less loss of silicon material in sawing seams. It has now developed into a mainstream slicing process. [0003] The appearance of silicon wafers for batteries should be silver-gray before use, and traces or impurities such as interlayers, blackening, oxidation, and fingerprints are not allowed. Therefore, in the preparation process of silicon wafers for high-efficiency monocrystalline si...

AI Technical Summary

Problems solved by technology

CN101020866A discloses a solar silicon wafer cleaning agent, its components are by mass percentage, 10-30% sodium nitrilotriacetate complexing agent, 5-10% C 10 -C 13 Carbonyl isomer alcohol ethoxylate surfactant, 3-5% fatty alcohol alkoxylate surfactant, 0.05-2% hydroxide peroxide, 5-10% butyl glycol ether organic Solvent, 1-5% potassium hydroxide, the balance is deionized water or tap water; the cleaning agent provided by this patent does not contain toxic, harmful and polluting substances, but the removal effect of metal impurities is not good enough

CN107686779A discloses a semiconductor grinding disc cleaning agent and its preparation method, including 1-15% of surfactant, 3-5% of organic base, 2-10% of complexing agent, 3-10% of cosolvent and 60-80% of water %, the cleaning agent provided by this patent has simple operation and low cost for cleaning silicon wafers, but it still has the defect that the effect of removing metal impurities is not good

[0006] At the same time, since organophosphorus compounds are generally added to cleaning agents, and organophosphorus compounds are highly polluting, causing environmental pollution, deterioration of ground water, and threatening human health, therefore, it is necessary to develop a method that can effectively remove metal impurities on the surface of silicon wafers. Phosphate-free cleaning agent is very necessary

Images