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Heterojunction of perovskite nanowires and preparation method of heterojunction

A nanowire and heterojunction technology, applied in the field of new semiconductor optoelectronic materials, can solve the problems of cumbersome template etching preparation process and large-scale preparation limitations

Active Publication Date: 2021-05-04
DALIAN UNIV OF TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current liquid-phase ion exchange method for preparing heterojunctions has disadvantages such as cumbersome template etching preparation process, and the use of direct contact between the solid phase and the ion exchange between the solid phase and the use of nanofabrication technology to control the anion exchange reaction to construct CsPbX 3 Approaches to nanowire heterojunctions involve multi-step transfer or fabrication, limited by large-scale fabrication

Method used

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  • Heterojunction of perovskite nanowires and preparation method of heterojunction
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  • Heterojunction of perovskite nanowires and preparation method of heterojunction

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Embodiment 1

[0032] Step 1: cleaning treatment of FTO glass substrate. First use detergent to wipe the surface of the FTO glass substrate, and then put the wiped FTO glass substrate in de-acetone, isopropanol, and deionized water for 10 min, respectively, for ultrasonic cleaning.

[0033] Step 2: Using anti-solvent vapor-assisted liquid phase recrystallization method to prepare high-quality CsPbBr grown at a certain angle to the substrate on the surface of the FTO glass substrate 3 Single crystal nanowires, specifically:

[0034] 2.1) Combine CsBr and PbBr 2 Dissolve in 1 mL of DMF, where 0.05 mmol of CsBr and 0.05 mmol of PbBr are added per 1 mL of DMF 2 . At room temperature, stir on a magnetic stirrer for 2 h to obtain a precursor solution with a concentration of 0.05M.

[0035] 2.2) Place the FTO glass substrate obtained in step 1 in a beaker containing isopropanol in advance, wherein the FTO glass substrate does not contact the anti-solvent liquid isopropanol, which is a volatile ...

Embodiment 2

[0040] Step 1: cleaning treatment of FTO glass substrate. First use detergent to wipe the surface of the FTO glass substrate, and then put the wiped FTO glass substrate in order to remove acetone, isopropanol, and deionized water for ultrasonic cleaning for 20 minutes respectively.

[0041] Step 2: Using anti-solvent vapor-assisted liquid phase recrystallization method to prepare high-quality CsPbBr grown at a certain angle to the substrate on the surface of the FTO glass substrate 3 Single crystal nanowires, specifically:

[0042] 2.1) Combine CsBr and PbBr 2 Dissolve in 1 mL of DMF, where 0.05 mmol of CsBr and 0.05 mmol of PbBr are added per 1 mL of DMF 2 . At room temperature, stir on a magnetic stirrer for 3 h to obtain a precursor solution with a concentration of 0.05M.

[0043] 2.2) Place the FTO glass substrate obtained in step 1 in a beaker containing isopropanol in advance, wherein the FTO glass substrate does not contact the anti-solvent liquid isopropanol, which...

Embodiment 3

[0047] Step 1: cleaning treatment of FTO glass substrate. First use detergent to wipe the surface of the FTO glass substrate, and then put the wiped FTO glass substrate in order to remove acetone, isopropanol, and deionized water for ultrasonic cleaning for 30 minutes respectively.

[0048] Step 2: Using anti-solvent vapor-assisted liquid phase recrystallization method to prepare high-quality CsPbBr grown at a certain angle to the substrate on the surface of the FTO glass substrate 3 Single crystal nanowires, specifically:

[0049] 2.1) Combine CsBr and PbBr 2 Dissolve in 1 mL of DMF, where 0.05 mmol of CsBr and 0.05 mmol of PbBr are added per 1 mL of DMF 2 . At room temperature, stir on a magnetic stirrer for 4 h to obtain a precursor solution with a concentration of 0.05M.

[0050] 2.2) Place the FTO glass substrate obtained in step 1 in a beaker containing isopropanol in advance, wherein the FTO glass substrate does not contact the anti-solvent liquid isopropanol, which...

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Abstract

The invention discloses a heterojunction of perovskite nanowires and a preparation method of the heterojunction, and belongs to the field of novel semiconductor photoelectric materials. The preparation method comprises the steps of: preparing quality CsPbBr3 single-crystal nanowires on the surface of an FTO glass substrate through adopting an anti-solvent vapor-assisted liquid-phase recrystallization method, wherein the CsPbBr3 single-crystal nanowires are grown on the FTO substrate at a certain angle; then, putting the prepared CsPbBr3 single-crystal nanowires and the FTO substrate into a glass bottle containing C4H9NH3I in a glove box filled with nitrogen, and placing the glass bottle on a heating table for heating; and preparing the full-inorganic CsPbBrnI3-n nanowire heterojunction with concentration gradient by utilizing gas phase ion exchange and controlling the temperature and the time. According to the method, the CsPbBrnI3-n full-inorganic halogen perovskite nanowire heterojunction with the concentration gradient can be prepared, and the crystal obtained through gas phase ion exchange is high in quality and can keep the morphology of the original crystal.

Description

technical field [0001] The invention belongs to the field of new semiconductor optoelectronic materials, and relates to an all-inorganic metal halide perovskite nanowire heterojunction obtained by gas-phase ion exchange and a preparation method thereof. Background technique [0002] Halogen perovskite materials, as a new semiconductor material, exhibit ultra-high photoluminescence (PL) quantum yield (about 90%) and fairly high carrier mobility, which enables people to fabricate based on The photoelectric conversion efficiency of perovskite film is as high as 25.2% for solar cells and light-emitting diodes with electroluminescence efficiency exceeding 20%. In addition, perovskite materials have a high dielectric constant in the visible range, which is sufficient to support optical modes in their nano- and microstructures. Such designs have been investigated to create efficient and compact laser sources. Metal halide perovskite materials with ABX 3 Chemical formula perovski...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/032H01L31/109
CPCH01L31/1872H01L31/032H01L31/109Y02P70/50
Inventor 李建良李静杨一鸣包亚男贺成宇李华锋张琦胡锡兵
Owner DALIAN UNIV OF TECH
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