N-polarity nitride template, N-polarity nitride device and preparation method of N-polarity nitride device

Abstract

The invention provides an N-polarity nitride template, an N-polarity nitride device and a preparation method of the N-polarity nitride device. The N-polarity nitride template comprises a substrate; an insertion layer; and a nitride layer, wherein the insertion layer is made of a transition metal disulfide compound. The nitride template comprises the transition metal disulfide compound which has a two-dimensional layered structure and is formed by sandwiching a layer of transition metal atoms between upper and lower layers of S atoms, and the material has good thermal stability and chemical stability and is suitable for a high-temperature condition and a gas atmosphere in the epitaxial growth process of a nitride material; for a traditional sapphire substrate, the atom adsorption energy of a nitride material can be effectively regulated and controlled by inserting a thin-layer transition metal disulfide compound, and meanwhile, the transition metal disulfide compound provides a continuous and stable S atom terminal in a large-size range, so that the problem of partial polarity reversal can be restrained; and the N-polar nitride material with high uniformity and a microelectronic / optoelectronic device structure thereof are realized.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to an N-polar nitride template, an N-polar nitride device and a preparation method thereof. Background technique [0002] Nitride materials, including: AlN, GaN, InN and their ternary / quaternary compound materials, have adjustable direct bandgap, high thermal stability / chemical stability, and have broad application potential in the direction of optoelectronic devices and power electronic devices . Common wurtzite nitride materials have asymmetry in the C-axis direction. When the three dangling bonds of metal atoms (Al, Ga, and In) face the epitaxial substrate, they are metal polar materials; the corresponding mirror structure, three The out-of-plane dangling bonds are N-polar materials. Nitride materials with different polarities form opposite spontaneous polarization vectors along the epitaxial growth direction, and then induce the formation of different types of ch...

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Problems solved by technology

[0003] However, the current mainstream nitride material epitaxy scheme is based on the metal-organic chemical vapor deposition method on the sapphire hetero-epitaxy substrate, and usually only metal-polar nitride materials can be obtained.

For the growth of N-polar nitride materials, the sapphire substrate needs to be subjected to high-temperature NH under appropriate conditions before growth. 3 In addition, the prepared N-polar nitride materials have problems such as partial reversal of polarity and poor material quality.

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