Quantum dot and surface modification method thereof, and quantum dot light-emitting diode

A quantum dot luminescence and surface modification technology, applied in luminescent materials, chemical instruments and methods, nano optics, etc., can solve the problems of quantum dot fluorescence efficiency reduction, precipitation, quantum dot aggregation, etc.

Pending Publication Date: 2021-06-25
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, a large number of oil-soluble long-chain ligands introduced on the surface of quantum dots prepared by solution method have the following disadvantages: on the one hand, such oil-soluble long-chain ligands are usually weakly adhered to the surface of quantum dots, affected by temperature, environment, etc. Ligands will fall off due to changes in water or oxygen, leaving a large number of gaps on the surface of quantum dots, causing aggregation and precipitation between quantum dots, and greatly reducing the fluorescence efficiency
However, these coating methods are not only cumbersome, but also factors such as water, strong polar organic solvents, catalysts and other factors involved in the process will reduce the fluorescence efficiency of quantum dots to varying degrees.
At the same time, quantum dots coated with inorganic or high molecular polymers will significantly increase the size of quantum dots.
Therefore, these conventional coating methods seriously affect the optical properties of quantum dots, which greatly limits their wide application.

Method used

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  • Quantum dot and surface modification method thereof, and quantum dot light-emitting diode
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Examples

Experimental program
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Effect test

Embodiment 1

[0065] A CdSe / CdS quantum dot with surface-grafted benzethonium chloride ligand, comprising the following preparation steps:

[0066] S10. Preparation of quantum dot solution: at room temperature, dissolve 300 mg of CdSe / CdS quantum dots (surface ligand is oleic acid) with 10 ml of n-hexane to obtain a CdSe / CdS quantum dot solution.

[0067] S20. Prepare a ligand solution: at room temperature, mix 50 mg of benzethonium chloride with 20 ml of chloroform, and place at 50° C. for reflux heating until completely dissolved to obtain a benzethonium chloride ligand solution.

[0068] S30. In an argon gas atmosphere, at 150 ° C, after mixing the CdSe / CdS quantum dot solution, the benzethonium chloride ligand solution and 60 ml of octadecene, the reaction was performed for 10 minutes, and after separation, n-hexane and ethanol were used to repeatedly dissolve, After precipitation and centrifugation, quantum dots with benzethonium chloride ligands grafted on the surface are obtained aft...

Embodiment 2

[0070] A kind of InP / ZnSeS quantum dot with surface-grafted benzethonium chloride ligand, comprising the following preparation steps:

[0071] S10. Preparation of quantum dot solution: at room temperature, dissolve 300 mg of InP / ZnSeS quantum dots (surface ligand is oleic acid) with 10 ml of n-hexane to obtain an InP / ZnSeS quantum dot solution.

[0072] S20. Prepare a ligand solution: at room temperature, mix 50 mg of benzethonium chloride with 20 ml of chloroform, and place at 50° C. for reflux heating until completely dissolved to obtain a benzethonium chloride ligand solution.

[0073] S30. In an argon gas atmosphere, at 150 ° C, after mixing the InP / ZnSeS quantum dot solution, the benzethonium chloride ligand solution and 60 ml of octadecene, the reaction was performed for 10 minutes, and after separation, n-hexane and ethanol were used to repeatedly dissolve, After precipitation and centrifugation, InP / ZnSeS quantum dots with surface grafted benzethonium chloride ligands ...

Embodiment 3

[0075] A CdZnS / ZnS quantum dot with surface-grafted benzethonium chloride ligand, comprising the following preparation steps:

[0076] S10. Preparation of quantum dot solution: at room temperature, dissolve 300 mg of CdZnS / ZnS quantum dots (surface ligand is oleic acid) with 10 ml of n-hexane to obtain a CdZnS / ZnS quantum dot solution.

[0077] S20. Prepare a ligand solution: at room temperature, mix 50 mg of benzethonium chloride with 20 ml of chloroform, and place at 50° C. for reflux heating until completely dissolved to obtain a benzethonium chloride ligand solution.

[0078] S30. In an argon gas atmosphere, at 150 ° C, after mixing the CdZnS / ZnS quantum dot solution, the benzethonium chloride ligand solution and 60 ml of octadecene, react for 10 minutes, and after separation, use n-hexane and ethanol to repeatedly dissolve, After precipitation and centrifugation, CdZnS / ZnS quantum dots with benzethonium chloride ligands grafted on the surface were obtained after purificat...

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Abstract

The invention belongs to the technical field of quantum dot materials, and particularly relates to a surface modification method for a quantum dot. The surface modification method comprises the following steps: acquiring a quantum dot solution; acquiring an ammonium halide ligand precursor solution with a benzene ring; and acquiring a non-coordination solvent, mixing the quantum dot solution, the ammonium halide ligand precursor solution with the benzene ring and the non-coordination solvent, conducting reacting in an inert gas atmosphere at a preset temperature, and performing separating to obtain a modified quantum dot. According to the surface modification method for the quantum dot provided by the invention, the surface of the modified quantum dot is grafted with an ammonium halide ligand with the benzene ring, so the stability and the dispersity of the quantum dot can be remarkably improved on the premise of not influencing the optical performance of the quantum dot, and meanwhile, the transmission performance of a current carrier is improved; and thus, the fluorescence efficiency of the quantum dot is improved.

Description

technical field [0001] The invention belongs to the technical field of quantum dot materials, and particularly relates to a quantum dot and a method for surface modification thereof, and a quantum dot light-emitting diode. Background technique [0002] Quantum dots refer to semiconductor nanomaterials in which excitons are bound in three-dimensional spatial directions, and the particle size is generally 1-100 nm. Due to the existence of the "quantum confinement" effect, with the further reduction of the size of the quantum dots, the continuous energy band structure becomes a discontinuous discrete energy level structure, which can emit significant fluorescence after excitation. Quantum dots with different energy band widths can be obtained by adjusting the size of the quantum dots. Quantum dots with different energy band widths will emit photons of different energies, that is, light of different colors, under the excitation conditions of a certain wavelength. Therefore, by...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/02C09K11/88C09K11/56H01L51/50B82Y20/00B82Y40/00
CPCC09K11/025C09K11/883C09K11/565B82Y20/00B82Y40/00H10K50/115
Inventor 聂志文刘文勇
Owner TCL CORPORATION
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