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Preparation method of two-dimensional transition metal chalcogenide

A technology of transition metal chalcogenides and transition metals, which is applied in the preparation of two-dimensional transition metal chalcogenides with large size, high quality and uniform layers, and the preparation of two-dimensional transition metal chalcogenides, which can solve the problem of small size and two-dimensional TMDs Problems such as uncontrollable number of material layers and poor product quality achieve the effects of reducing preparation costs, easy large-area preparation, and convenient operation

Pending Publication Date: 2021-07-09
NORTHEAST NORMAL UNIVERSITY
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  • Description
  • Claims
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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing two-dimensional transition metal chalcogenides in order to solve the problems of uncontrollable layers, small size or poor product quality of two-dimensional TMDs materials

Method used

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  • Preparation method of two-dimensional transition metal chalcogenide
  • Preparation method of two-dimensional transition metal chalcogenide
  • Preparation method of two-dimensional transition metal chalcogenide

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Experimental program
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Effect test

Embodiment 1

[0029] 1. Preparation of uniform monolayer molybdenum diselenide single crystal

[0030] Such as figure 1 As shown, a large-size, high-quality, uniform single-layer two-dimensional molybdenum diselenide single crystal is grown in a horizontal reactor. The two ends of the horizontal reactor are respectively provided with a gas inlet 1 and a gas outlet 4. The gold substrate is placed in a horizontal reactor. In the high-temperature zone of the furnace, gold foil (10 mm × 10 mm × 100 microns, with a purity of 99.99 wt%) is placed in the central area of ​​a horizontal reaction furnace (the diameter of the furnace tube is 25 mm, and the length of the reaction zone is 5 cm); molybdenum trioxide powder (purity 99.999%) 21.3 mg was placed at 3 cm from the front of the gold foil; 120 mg of selenium powder (purity 99.99%) was placed at 350°C in a horizontal reactor, and the reactor was heated to 900°C in an argon atmosphere ( The flow rate of argon gas is 100 ml / min, and the average te...

Embodiment 2

[0035] 1. Preparation of uniform monolayer molybdenum diselenide single crystal

[0036] Such as figure 1 As shown, a large-size, high-quality, uniform single-layer two-dimensional molybdenum diselenide single crystal is grown in a horizontal reactor. The two ends of the horizontal reactor are respectively provided with a gas inlet 1 and a gas outlet 4. The gold substrate is placed in a horizontal reactor. In the high-temperature zone of the furnace, gold foil (10 mm × 10 mm × 100 microns, with a purity of 99.99 wt%) is placed in the central area of ​​a horizontal reaction furnace (the diameter of the furnace tube is 25 mm, and the length of the reaction zone is 5 cm); molybdenum trioxide powder (purity 99.999%) 35.6 mg was placed at 3 cm from the front of the gold foil; 150 mg of selenium powder (purity 99.99%) was placed at 350°C in a horizontal reactor, and the reactor was heated to 920°C in an argon atmosphere ( The flow rate of argon gas is 120 ml / min, and the average temp...

Embodiment 3

[0041] 1. Preparation of uniform monolayer molybdenum diselenide single crystal

[0042] Such as figure 1 As shown, a large-size, high-quality, uniform single-layer two-dimensional molybdenum diselenide single crystal is grown in a horizontal reactor. The two ends of the horizontal reactor are respectively provided with a gas inlet 1 and a gas outlet 4. The gold substrate is placed in a horizontal reactor. In the high-temperature zone of the furnace, gold foil (10 mm × 10 mm × 100 microns, with a purity of 99.99 wt%) is placed in the central area of ​​a horizontal reaction furnace (the diameter of the furnace tube is 25 mm, and the length of the reaction zone is 5 cm); molybdenum trioxide powder (purity 99.999%) 13.3 mg was placed at 5 cm from the front of the gold foil; 60 mg of selenium powder (purity 99.99%) was placed at 350°C in a horizontal reactor, and the reactor was heated to 880°C in an argon atmosphere ( The flow rate of argon gas is 100 ml / min, and the average tem...

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Abstract

The invention discloses a preparation method of a two-dimensional transition metal chalcogenide. The preparation method comprises the following steps: 1) preparing a two-dimensional transition metal chalcogenide single crystal and a thin film; 2) coating a high-molecular polymer protective layer; (3) electrochemically bubbling and transferring the two-dimensional transition metal chalcogenide single crystal and the thin film; and 4) removing the high-molecular polymer protective layer. The thickness of the prepared chalcogenide film is 0.7-1.0 nm; and the number of the compound single crystal layers is 1-10, and the whole material is uniform in component and controllable in thickness. The preparation method has the advantages that 1) the method is high in preparation speed, 2) the method can be carried out under normal pressure, and has the characteristics of convenience in operation, easiness in regulation and control, easiness in large-area preparation and the like, 3) a gold substrate can be repeatedly utilized, so that the preparation cost is reduced, and 4) the prepared single crystal and thin film have high crystal quality, uniform layer number, excellent visible light permeability and relatively high photo-luminescence characteristic.

Description

technical field [0001] The invention belongs to the technical field of two-dimensional material preparation, in particular to a method for preparing two-dimensional transition metal chalcogenides, which is suitable for preparing two-dimensional transition metal chalcogenides with large size, high quality and uniform layers. Background technique [0002] Two-dimensional materials are ultra-thin materials with atomic thickness, which have very unique properties compared with ordinary bulk materials, and have become a major research hotspot in the field of materials in recent years. Among two-dimensional materials, graphene has excellent conductivity and is an excellent conductive material, but the zero-bandgap structure of graphene limits its development in the field of microelectronics and new fields. Two-dimensional transition metal dichalcogenides (Transition Metal Dichalcogenides, TMDs) are a new type of semiconductor material with excellent mechanical properties, flexibil...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B25/00C30B29/46C30B29/64C23C16/30C23C16/01C23C16/56
CPCC30B25/00C30B29/64C30B29/46C23C16/01C23C16/56C23C16/305
Inventor 辛星陈佳美张艳梅刘为振徐海阳
Owner NORTHEAST NORMAL UNIVERSITY
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